Results 41 to 50 of about 50,556 (278)
MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors
Active and Passive Electronic Components, 2002 The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated.
K. F. Yarn
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Energy Reports, 2022 In order to solve the problem of long calculation time of insulated gate bipolar transistor (IGBT) junction temperature, the XGBoost machine learning algorithm is used to calculate IGBT junction temperature in the annual damage assessment process.
Bo Zhang +4 more
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Advanced Functional Materials, EarlyView.Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
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Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor [PDF]
, 2021 Mikhail Basov
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IEEE Access, 2023 Bipolar junction transistors (BJT) are widely used integrated devices for analog circuits. For most of analog applications, the process variation and the match performance of BJT pairs are critical for the circuit design.
Xiaonian Liu, Zichen Yang
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Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
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Junction Parameter Extraction for Electronic Device Characterization
Active and Passive Electronic Components, 2004 A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters.
S. Dib +5 more
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Energies, 2020 In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state ...
Paweł Górecki, Krzysztof Górecki
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Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application
Advanced Materials, EarlyView.This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong +12 more
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Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure
Micromachines, 2021 For the first time, a novel germanium (Ge) bi-stable resistor (biristor) with a vertical pillar structure was implemented on a bulk substrate. The basic structure of the Ge pillar-typed biristor is a p-n-p bipolar junction transistor (BJT) with an open ...
Hagyoul Bae +6 more
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