Results 81 to 90 of about 50,556 (278)
Small, EarlyView.ETM‐based chalcogenides exhibit rich structural diversity and tunable electronic and catalytic properties. This review critically summarizes structure–property–application relationships in ETM‐based chalcogenides, highlighting recent advances in electronic devices, electrocatalysis, and energy‐related applications, while outlining key challenges and ...
Sachin Jaidka +6 more
wiley +1 more source
High Voltage, EarlyView.ABSTRACT Because of the harsh serving conditions of insulated gate bipolar transistor (IGBT) packaged by silicone gel with high voltage and high frequency, it is crucial to reveal the developing characteristics and inhibiting method of discharged degradation at the interface of silicone gel/ceramic substrates.
Chuang Zhang +7 more
wiley +1 more source
High frequency realization of non-autonomous nonlinear transistor circuit
AIP Advances, 2019 In this paper, an electronic implementation of a non-autonomous nonlinear transistor circuit is presented. This nonlinear circuit topology requires a minimal number of components, which consists of two resistors, two capacitors, and a single NPN bipolar ...
Benjamin K. Rhea +2 more
doaj +1 more source
Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp +7 more
wiley +1 more source
Does a Morphotropic Phase Boundary Exist in ZrxHf1‐xO2‐Based Thin Films?
Advanced Functional Materials, Volume 36, Issue 19, 5 March 2026.This study investigates 6 nm zirconium‐rich hafnium‐zirconium oxide thin–film metal–insulator–metal capacitors using a combination of experimental methods and machine learning–based molecular dynamics simulations to provide insight into the physical mechanisms that enhance the dielectric constant near 0 V and attribute it to the field‐induced ...
Pramoda Vishnumurthy +9 more
wiley +1 more source
Effects of Fast Neutron Irradiation on Switching of Silicon Bipolar Junction Transistor [PDF]
, 2023 Sung Ho Ahn, Gwang‐Min Sun
openalex +1 more source
Stability of Lead‐Free Perovskite Solar Cells
Advanced Sustainable Systems, Volume 10, Issue 3, March 2026.This review article discusses the very recent status of stability of lead‐free perovskite solar cells, possible challenges, fabrication techniques, the degradation mechanism of lead‐free PSCs affecting stability, possible causes hindering the simultaneous improvement of efficiency and stability of lead‐free PSCs, potential outlook, and future research ...
Pranta Barua +4 more
wiley +1 more source
Advanced Science, Volume 13, Issue 15, 13 March 2026.Recent advances in materials and device engineering enable continuous, real‐time monitoring of muscle activity via wearable and implantable systems. This review critically summarizes emerging technologies for tracking electrophysiological, biomechanical, and oxygenation signals, outlines fundamental principles, and highlights key challenges and ...
Zhengwei Liao +4 more
wiley +1 more source
Condition Monitoring of IGBT Modules Based on Changes of Thermal Characteristics
IEEE Access, 2019 Condition monitoring (CM) of insulated-gate bipolar transistor (IGBT) modules is significant for improving power converter reliability and reducing the loss caused by IGBT failure.
Kexin Wei +3 more
doaj +1 more source
New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs [PDF]
, 2023 Kunfeng Zhu +16 more
openalex +1 more source