Results 41 to 50 of about 1,339 (186)

Systematic Phosphorus‐Driven Structural and Field Engineering of n‐a‐Si:H for Flexible n‐a‐Si:H/Te Near‐Infrared Photodetectors

Advanced Science, EarlyView.
Our research elucidates the systematic evolution of the microstructure and optoelectronic properties of n‐a‐Si:H governed by the phosphine dilution ratio. Optimally phosphorus‐doped n‐a‐Si:H is integrated with Te to form a flexible heterojunction, enabling high‐performance near‐infrared photodetectors.
Kyeong‐jin Hyun, Soo‐Won Choi, Byeongjin Park, Hee‐Won Jang, Jongwon Yoon, Yonghun Kim, Woon Ik Park, Jung‐Dae Kwon   +7 more
wiley   +1 more source

Galvanic interconnects for thermoelectric cooling modules

Фізика і хімія твердого тіла, 2019
The paper studies the use of galvanic technologies in thermoelectricity. The technological features of applying anti-diffusion coatings on bismuth telluride based thermoelectric material (TEM) by electroplating method are considered.
M. M. Krechun
doaj   +1 more source

Effects of Milling Duration on the Thermoelectric Properties of n-Type BI2TE2.7SE0.3 [PDF]

Archives of Metallurgy and Materials, 2019
In this study, an oxide reduction process and a reduction-sintering process were employed to synthesize a thermoelectric alloy from three thermoelectric composite oxide powders, and the thermoelectric properties were investigated as a function of the ...
Min-Soo Park, Hye-Young Koo, Yonh-Ho Park, Gook-Hyun Ha   +3 more
doaj   +1 more source

Mechanically Robust Dicing-Free Thermoelectric Module Fabrication Using Anion-Cation co-Doped Bismuth Tellurides. [PDF]

Small
NaCl co‐doping effectively enhances the thermoelectric performance of p‐type Bi–Sb–Te (BST) alloys through simultaneous Na+ substitution at Sb sites and Cl− substitution at Te sites, inducing local lattice distortion and defect engineering. At low doping levels, carrier transport is optimized by tuning carrier concentration and suppressing antisite ...
Thoravat S, Yun JH, Kumar A, Park J, Jin H, Pak C, Kim YK, Hyun DJ, Choi LK, Kim YH, Lee HJ, Park J, Park SD, Kim JH, Rhyee JS.   +14 more
europepmc   +2 more sources

MXenes Contacts for p‐type 2D Electronics

Advanced Science, EarlyView.
Solution‐processed MXene contacts are engineered for p‐type 2H‐MoTe2 transistors. By comparing Ti3C2Tx, Nb2CTx, and Mo2CTx, Nb2CTx is identified as the best‐performing contact among the MXenes examined in this work, offering favorable work‐function alignment, low contact resistance, and near‐ohmic hole injection for scalable 2D electronics.
Tianchao Guo, Maolin Chen, Yizhou Wang, Chen Liu, Xiangming Xu, Linqu Luo, Dekang Zhu, Ning Chu, Xiaowen Zhang, Alfonso Caraveo, Thomas D. Anthopoulos, Xixiang Zhang, Husam N. Alshareef   +12 more
wiley   +1 more source

Transparent Topological Meta‐Diplexer via Tightly Confined Valley Surface States

Advanced Science, EarlyView.
An optically transparent topological metasurface supporting tightly confined valley surface states enables robust and flexible wave routing in an ultrathin platform. A compact transparent meta‐diplexer with spatially and spectrally separated channels is realized, while communication experiments verify high‐fidelity signal transmission, opening new ...
Sijie Li, Ping Li, Zhihao Lan, Yin Li, Hang Wong, Menglin L.N. Chen   +5 more
wiley   +1 more source

Bismuth and lead underpotential deposition on bismuth telluride: new insights into the electrochemical synthesis of bismuth telluride and evaluation of real surface area

Журнал Белорусского государственного университета: Химия, 2017
The underpotential deposition (UPD) processes of lead and bismuth on bismuth telluride (Bi2Te3) have been discovered with the underpotential shifts 0.3 V for Pb UPD and 0.1 V for Bi UPD.
Aliaksei S. Bakavets, Yauhen N. Aniskevich, Genady A. Ragoisha, Eugene A. Streltsov   +3 more
doaj  

Advances in Se Wide‐Bandgap Photovoltaics and TexSe1‐x SWIR Photodiodes

Advanced Science, EarlyView.
In this review, fundamental properties and current challenges in Se photovoltaics (PVs) for tandem and indoor PVs and TexSe1‐x alloys for short wave infrared photodiodes are discussed. A case is made for the practicality of elemental chalcogenide optoelectronics, and a pathway toward resolving the key challenges in these respective technologies is ...
Adam D. Alfieri, Deep Jariwala
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

The Thermoelectric Properties of Bismuth Telluride

Advanced Electronic Materials, 2019
AbstractBismuth telluride is the working material for most Peltier cooling devices and thermoelectric generators. This is because Bi2Te3 (or more precisely its alloys with Sb2Te3 for p‐type and Bi2Se3 for n‐type material) has the highest thermoelectric figure of merit, zT, of any material around room temperature. Since thermoelectric technology will be
Ian T. Witting, Thomas C. Chasapis, Francesco Ricci, Matthew Peters, Nicholas A. Heinz, Geoffroy Hautier, G. Jeffrey Snyder   +6 more
openaire   +2 more sources