Results 51 to 60 of about 2,945 (216)

Effects of Milling Duration on the Thermoelectric Properties of n-Type BI2TE2.7SE0.3 [PDF]

Archives of Metallurgy and Materials, 2019
In this study, an oxide reduction process and a reduction-sintering process were employed to synthesize a thermoelectric alloy from three thermoelectric composite oxide powders, and the thermoelectric properties were investigated as a function of the ...
Min-Soo Park, Hye-Young Koo, Yonh-Ho Park, Gook-Hyun Ha   +3 more
doaj   +1 more source

Thermoelectric Gating Organic Electrochemical Transistors Enabled by Printable Ionogels With n‐p Convertible Thermopower

Advanced Science, EarlyView.
A type of thermoelectric ionogels with convertible n‐p thermopowers are demonstrated with Seebeck coefficients ranging from ‐3.61 to +9.74 mV K−1. Thus, thermoelectric gating organic electrochemical transistor is achieved by employing ionogel as thermoelectric modules and ionic dielectrics simultaneously, paving the road to self‐powered, highly ...
Xingyu Hu, Xinwen Yan, Ling Huang, Xiaohang Zhang, Xuan Cao, Cong Zhang, Qingqing Sun, Hanyu Jia, Xuying Liu   +8 more
wiley   +1 more source

The Thermoelectric Properties of Bismuth Telluride

Advanced Electronic Materials, 2019
AbstractBismuth telluride is the working material for most Peltier cooling devices and thermoelectric generators. This is because Bi2Te3 (or more precisely its alloys with Sb2Te3 for p‐type and Bi2Se3 for n‐type material) has the highest thermoelectric figure of merit, zT, of any material around room temperature. Since thermoelectric technology will be
Ian T. Witting, Thomas C. Chasapis, Francesco Ricci, Matthew Peters, Nicholas A. Heinz, Geoffroy Hautier, G. Jeffrey Snyder   +6 more
openaire   +3 more sources

Fabrication of Bismuth Telluride Wire Thermoelectric Devices [PDF]

, 2015
Access full text - https://doi.org/10.1007/978-981-287-736-9_23Bismuth telluride wires are interesting building blocks of thermoelectric devices. These are nanoscale heat to electric converters that have applications as uncooled detectors, generators and
JOHNSON, S., K. A. Shirvani, SHIRVANI, K. A., S. Johnson, T. Brower, L. Konopko, NIKOLAEVA, A., HUBER, T. E., Q. Barclif, T. E. Huber, A. Nikolaeva, KONOPKO, L., BARCLIF, Q., BROWER, T.   +13 more
core   +1 more source

Bismuth and lead underpotential deposition on bismuth telluride: new insights into the electrochemical synthesis of bismuth telluride and evaluation of real surface area

Журнал Белорусского государственного университета: Химия, 2017
The underpotential deposition (UPD) processes of lead and bismuth on bismuth telluride (Bi2Te3) have been discovered with the underpotential shifts 0.3 V for Pb UPD and 0.1 V for Bi UPD.
Aliaksei S. Bakavets, Yauhen N. Aniskevich, Genady A. Ragoisha, Eugene A. Streltsov   +3 more
doaj  

Coupled Vacancy and Phonon‐Scattering Engineering Drive Defect Evolution Toward Multifunctional High‐Performance Bi2Te3 Thermoelectrics

Advanced Science, EarlyView.
ZnSb reduces carrier concentration and suppresses Te volatilization, while Se substitution within QLs softens phonons and enhances anharmonicity. Swapped bilayers near twin boundaries strengthen phonon scattering and interlayer bonding. As a result, the optimal sample achieves an ultra‐high zT ∼1.51, cooling temperature difference of ∼70 K, power ...
Ruiheng Li, Minwen Yang, Huangshui Ma, Jie Zheng, Shengqiang Cui, Xiaobo Tan, Xuri Rao, Xiang An, Zongxiang Kan, Siqi Huo, Jing Shuai, Min Hong, Ran Ang   +12 more
wiley   +1 more source

Multifaceted Roles of Tantalum in Promoting the Thermoelectric Performance of Mg3(Sb,Bi)2 Based Materials

Advanced Science, EarlyView.
A multifunctional tantalum incorporation strategy enables simultaneous tuning of carrier concentration, mitigation of grain‐boundary scattering, and enhanced phonon scattering in Mg3(Sb,Bi)2. These synergistic effects markedly improve carrier mobility and suppress lattice thermal conductivity, yielding both high material zT and high module conversion ...
Guangmeng You, Jingdan Lei, Kai Xu, Yuntian Fu, Xueke Gu, Chengxiao Peng, Zhen Wang, Jing Chen, Kunpeng Zhao, Chao Wang   +9 more
wiley   +1 more source

Novel solution route synthesis of low thermal conductivity nanocrystalline bismuth telluride

, 2010
A novel synthesis approach based on a solution route has been developed for the fabrication of nanocrystalline bismuth telluride. The method consists of dissolving both bismuth and tellurium into the same organic solvent with the assistance of complexing
Li, S., Muhammed, Mamoun,, Shuo Zhang, Mamoun Muhammed, Toprak, Muhammet,, He, Zeming, Zeming He, Shanghua Li, Zhang, Z., Mueller, Eckhard, Toprak, M., Müller, E., Muhammet Toprak, Eckhard Müller, Muhammed, M., Li, Shanghua,, Zhang, Shuo,, Stiewe, C., Stiewe, Christian, Christian Stiewe   +19 more
core   +1 more source

Effects of Annealing and Doping on Nanostructured Bismuth Telluride Thick Films

, 2008
Bismuth telluride is the state-of-the-art thermoelectric (TE) material for cooling applications with a figure of merit of ∼1 at 300 K. There is a need for the development of TE materials based on the concept of thick films for miniaturized devices due to
Muhammet S. Toprak (804327), Mamoun Muhammed (1284546), Eckhard Müller (8664453), Dieter Platzek (8664450), Jian Zhou (28020), Hesham M. A. Soliman (8664447), Pawel Ziolkowski (4710259), Shanghua Li (8664444)   +7 more
core   +2 more sources

Thermoelectric PANI/TeNWs Fiber Based Microsensor for Passive Temperature and Active Chemical Sensing

Advanced Science, EarlyView.
Continuous wet‐spinning of PANI with TeNWs yields a multifunctional microfiber. Oriented TeNWs impose chain alignment and enhance π‐electron delocalization, boosting the Seebeck coefficient to 59.9 µV K−1 for passive temperature sensing (1 K detection limit), while achieving high pH sensitivity (59.25 mV pH−1) and rapid NH3 response (0.96 s).
Dongmei Xie, Mengran Chen, Xuefei Zhang, Yan Xu, Weiye Geng, Zhe Tang, Si‐ze Lou, Shun Wan, Zhenguo Liu, Heng Liu, Peng‐an Zong   +10 more
wiley   +1 more source