Results 221 to 230 of about 4,338,519 (256)
Gate-tunable mid-infrared electroluminescence from Te/MoS<sub>2</sub> p-n heterojunctions. [PDF]
Wang S +11 more
europepmc +1 more source
Increasing the frequency at which organic electronics operate while limiting the operation voltage is key to enabling future sustainable wireless applications. This work shows p‐type organic field‐effect transistors based on a molecularly doped, small molecule/polymer blend (C8‐BTBT:C16IDT‐BT), fabricated via direct‐writing and solution‐processing ...
Tommaso Losi +8 more
wiley +1 more source
Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe<sub>2</sub> monolayers. [PDF]
Sun L +12 more
europepmc +1 more source
TECTB Variants Reveal Tectorial Membrane Vulnerability in Dominant Non‐Syndromic Hearing Loss
TECTB is a non‐collagenous protein of the tectorial membrane – an extracellular matrix of the cochlea. This study identifies dominant missense variants in TECTB linked to human hereditary deafness in two unrelated families. Genetically engineered mice homozygous for one of the variants are profoundly deaf, whereas heterozygous mice have normal hearing ...
Evan B. Hale +23 more
wiley +1 more source
Topological valley quasi-bound states in the continuum for radiatively accessible robust transport. [PDF]
Wei M +6 more
europepmc +1 more source
A graphene‐metal hybrid transmissive metasurface enables electrically tunable mid‐infrared transmission modulation through ionic gel top gating. By combining graphene with a metallic slit metasurface, high modulation efficiency and broadband operation are achieved simultaneously, demonstrating efficient electrical control of mid‐infrared transmission ...
Heonhak Ha +4 more
wiley +1 more source
Correlated insulator in the kagome flat band of a two-dimensional electrostatic crystal. [PDF]
Wang DQ +9 more
europepmc +1 more source
Probabilistic Computing via Gate‐Tunable Random Telegraph Noise
Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun +8 more
wiley +1 more source
Interaction-driven flat band and charge order in Fe<sub>5</sub>GeTe<sub>2</sub>. [PDF]
Gao Q +11 more
europepmc +1 more source

