Results 81 to 90 of about 21,101 (315)

Direct Evidence of Topological Dirac Fermions in a Low Carrier Density Correlated 5d Oxide

open access: yesAdvanced Functional Materials, EarlyView.
The 5d oxide BiRe2O6 is discovered as a low‐carrier‐density topological semimetal hosting symmetry‐protected Dirac fermions stabilized by nonsymmorphic symmetries. Angle‐resolved photoemission spectroscopy, quantum oscillations, and magnetotransport measurements reveal gapless Dirac cones, quasi‐2D Fermi surfaces, high carrier mobility, and a field ...
Premakumar Yanda   +11 more
wiley   +1 more source

Schwinger effect of extremal Reissner-Nordström black holes

open access: yesJournal of High Energy Physics
The Schwinger effect has a variety of physics applications. In the context of black hole physics, it provides a channel for the decay of charged black holes.
Puxin Lin, Gary Shiu
doaj   +1 more source

Physically valid black hole interior models [PDF]

open access: yesReports on Mathematical Physics, 1999
New, simple models of ``black hole interiors'', namely spherically symmetric solutions of the Einstein field equations in matter matching the Schwarzschild vacuum at spacelike hypersurfaces ``R<2M'' are constructed. The models satisfy the weak energy condition and their matter content is specified by an equation of state of the elastic type.
openaire   +3 more sources

Miniature Nanomesh Mechano‐Acoustic Sensor with Wide Linear Dynamic Range, Broad Bandwidth, and Flat Frequency Response

open access: yesAdvanced Functional Materials, EarlyView.
A miniaturized mechano‐acoustic sensor is developed using an electrospun PVDF nanomesh as the diaphragm in a capacitive sensor structure. Unlike conventional nanomesh‐based sensors, it achieves high linear sensitivity, a broad and flat frequency response, and a compact form factor.
Jeng‐Hun Lee   +8 more
wiley   +1 more source

Physical Aspects of Quasi-Local Black Hole Horizons [PDF]

open access: yesInternational Journal of Modern Physics D, 2011
We discuss some of the physical aspects expected to be associated with black holes. These include Hawking radiation, horizon entropy and cosmic censorship. In particular we focus on whether these properties are more naturally associated to causally defined horizons or quasi-local horizons.
openaire   +2 more sources

Multicolor Optoelectronic Synapse Enabled by Photon‐Modulated Remote Doping in Solution‐Processed Van Der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Multicolor optoelectronic synapses are realized by vertically integrating solution‐processed MoS2 thin‐film and SWCNT. The electronically disconnected but interactive MoS2 enables photon‐modulated remote doping, producing a bi‐directional photoresponse.
Jihyun Kim   +8 more
wiley   +1 more source

Tailoring the Properties of Functional Materials With N‐Oxides

open access: yesAdvanced Functional Materials, EarlyView.
The properties of materials bearing N‐oxide groups are often dominated by the polar N+─O− bond. It provides hydrophilicity, selective ion‐binding, electric conductivity, or antifouling properties. Many of the underlying mechanisms have only recently been discovered, and the interest in N‐oxide materials is rapidly growing.
Timo Friedrich   +5 more
wiley   +1 more source

Charged regular black holes in quantum gravity: from thermodynamic stability to observational phenomena

open access: yesEuropean Physical Journal C: Particles and Fields
We investigate the thermodynamic, astrophysical, and observational properties of charged nonsingular black holes within the framework of quantum gravity and nonlinear electrodynamics.
Erdem Sucu, İzzet Sakallı
doaj   +1 more source

Lower bound on the radii of circular orbits in the extremal Kerr black-hole spacetime

open access: yesEuropean Physical Journal C: Particles and Fields, 2018
It is often stated in the physics literature that maximally-spinning Kerr black-hole spacetimes are characterized by near-horizon co-rotating circular geodesics of radius $$r_{\text {circular}}$$ rcircular with the property $$r_{\text {circular ...
Shahar Hod
doaj   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

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