Results 91 to 100 of about 110,244 (159)

Digital‐Analog Integrated Optoelectronic Memristor Based on Carbon Dot for Ternary Opto‐Electronic Logic and Sen‐Memory Applications

Advanced Electronic Materials, EarlyView.
Herein, the development of a protective face mask based on a hierarchically porous cerium metal‐organic framework intensifying the bacterial entrapment ability and catalytic ROS generation at ambient condition is presented. It presents almost 100% antimicrobial efficacies for different bacteria even though in insufficient light (e.g.
Jiaqi Xu, Xiaoning Zhao, Dan Xie, Ya Lin, Zhongqiang Wang, Zhuangzhuang Li, Haiyang Xu, Yichun Liu   +7 more
wiley   +1 more source

A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges

Advanced Electronic Materials, EarlyView.
This paper provides a comprehensive review of the existing literature related to the fundamentals of gallium oxide (Ga2O3), growth methods, substrates, and particularly a focused examination of Ga2O3‐based heterojunctions. Particular attention has also been given to the state‐of‐the‐art Ga2O3‐based heterojunctions for photodetectors. The key challenges
Alfred Moore, Saqib Rafique, Ciaran Llewelyn, Dan Lamb, Lijie Li   +4 more
wiley   +1 more source

Are PM6:Y6 Bulk Heterojunction Photoactive Films Cytocompatible and Electrically Stable in Biological Environments?

Advanced Electronic Materials, EarlyView.
PM6:Y6 organic photovoltaic films are systematically studied to understand their potential for use in bioelectronics. The films exhibit excellent stability in simulated physiological environments, enabling consistent power delivery and demonstrating compatibility with rat neurons and the choriallantoic membrane of chicken embryos.
Mathias Polz, Konrad Binter, Kaila M. Yallum, Thomas Rath, Marta Nowakowska‐Desplantes, Christa Schimpel, Gerhard Sommer, Nassim Ghaffari‐Tabrizi‐Wizsy, Natalie Banerji, Gregor Trimmel, Theresa Rienmüller   +10 more
wiley   +1 more source

Fabrication and Characterization of Ga2O3 FinFETs on Patterned Silicon Substrate

Advanced Electronic Materials, EarlyView.
This study presents a Ga2O3‐based FinFET fabricated on a patterned silicon substrate using ALD. Electrical measurements reveal that post‐deposition annealing at 450 °C significantly improves the device performance, yielding a high Ion/Ioff ratio of 8.3 × 107, enhanced mobility of 8.5 cm2 V−1 s, and a breakdown voltage exceeding 200 V.
Hadi Ebrahimi‐Darkhaneh, Leunam Fernandez‐Izquierdo, Josefina Arellano‐Jimenez, Manuel Quevedo‐Lopez, Sanjay K. Banerjee   +4 more
wiley   +1 more source

Flash‐Thermal Reduction of Graphene Oxide with Flexible Electronics Platform for Highly Sensitive Wearable Temperature Sensor

Advanced Electronic Materials, EarlyView.
In this study, by employing the flash‐thermal reduction (FTr) technique, the reduction degree of the graphene oxide (GO) with systematic analyses of conductivity and material stability is precisely adjusted. The optimized FTrGO‐based sensor exhibits exceptional flexibility, reversibility, high sensitivity (≈1.28% °C−1), excellent linearity (R2 ≈ 0.999),
Yeong Jun Yun, Hyun Jin Kang, Chan Yun Bae, Gyu Heon Bae, Hyun Jin Lee, Ki Hoon Kim, Yeong Jun Jang, Tae Won Nam, Jung Woo Lee   +8 more
wiley   +1 more source

A Blending Approach for Dual Surface and Bulk Functionality in Organic Transistors

Advanced Electronic Materials, EarlyView.
Dual‐mode organic transistor, combining Electrolyte‐Gated Organic Field‐Effect Transistor (EGOFET) and Organic Electrochemical Transistor (OECT) functionalities, is achieved by blending p‐type semiconducting polymer and n‐type mixed conducting fullerene.
Sasha Simotko, Yogesh Yadav, Gitti L. Frey   +2 more
wiley   +1 more source

Blowing up fixed points [PDF]

Publicacions Matemàtiques, 1981
openaire   +5 more sources

Solution‐Processed Sterically Hindered Donor–Acceptor Small Molecules as Molecular Floating‐Gates for High‐Efficiency Ambipolar Charge Trapping Memory

Advanced Electronic Materials, EarlyView.
High‐efficiency ambipolar multilevel nonvolatile organic transistor memory using solution‐processing a sterically hindered small molecule spiro[fluorene‐9,7′‐dibenzo[c,h]acridine]‐5′‐one with donor–acceptor structures as charge trapping layer is demonstrated.
Yuyu Liu, Zhen Shao, Yue Li, Jing Liu, Lingzhi Jin, Yiru Wang, Wen Li, Linghai Xie, Haifeng Ling   +8 more
wiley   +1 more source

Highly Efficient and Flexible Thin Film Thermoelectric Materials from Blends of PEDOT:PSS and AgSb0.94Cd0.06Te2

Advanced Electronic Materials, EarlyView.
Highly mechanically stable and flexible composite TE thin films based on PEDOT:PSS and AgSb0.94Cd0.06Te2 blend are fabricated. Simultaneous enhancement of S and σ is achieved in the whole blend regime. A very high Seebeck coefficient (204.9 µV K−1) and a power factor of 53.45 µW m−1 K−2 are obtained for 97.5 wt.% AgSb0.94Cd0.06Te2 content.
Mahima Goel, Adrian Hochgesang, Animesh Bhui, Kanishka Biswas, Mukundan Thelakkat   +4 more
wiley   +1 more source

Designer Electrocatalysts for the Oxygen Reduction Reaction with Controlled Platinum Nanoparticle Locality

Advanced Energy Materials, EarlyView.
Pt/C catalysts differing only in the locality of the Pt nanoparticles, whether inside or outside of the pores of the same carbon support, are needed to study the effect of said locality. Depending on the carbon support used, nanoparticles inside the pores can show hindered accessibility and ORR performance.
Giovanni Ferro, Camille Roiron, Hanson Wang, Jonathan Braaten, Björn M. Stühmeier, Christina Johnston, Lei Cheng, Iryna V. Zenyuk, Plamen Atanassov   +8 more
wiley   +1 more source