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Switching performance of a SiC MOSFET body diode and SiC schottky diodes at different temperatures
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2017This paper investigates the reverse recovery behaviour of a SiC MOSFET intrinsic/body diode and compares the diode's performance with similarly rated SiC Schottky diodes at different temperatures. A circuit level analytical modelling approach is proposed for rapid and accurate predictions of switching transients and losses.
M. R. Ahmed, R. Todd, A. J. Forsyth
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Characterization on latest-generation SiC MOSFET's body diode
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2016This work evaluates the reverse recovery behavior of CREE's Gen 3 900V SiC MOSFET's body diode under different conditions. As the highest current rating discrete SiC MOSFET available up-to-now, CREE's Gen 3 900V 10 mΩ SiC MOSFET is the main device under test (DUT) in this work. Both static and dynamic characteristics of the DUT are presented.
Xueyu Hou +2 more
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Characterization and modeling of SiC MOSFET body diode
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016In this paper, the static and switching characterizations of a SiC MOSFET's body diode are presented. The static characterization of SiC MOSFET's body diode is carried out using a curve tracer and a double pulse test bench is built to characterize the inductive switching behavior of SiC MOSFET's body diode.
Kang Peng +2 more
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Efficacy of a multiple diode laser system for body contouring
Lasers in Surgery and Medicine, 2011AbstractBackground and ObjectivesLow‐level laser therapy (LLLT) has been shown to induce cellular reactions in nonphotosynthetic cells however skepticism remains regarding efficacy at the clinical level. The purpose of this study was to evaluate the efficacy of LLLT independent of liposuction.
Courtney M L, Elm +3 more
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Materials Science Forum, 2017
External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD should be kept smaller than the built-in potential of the body diode.
Shiro Hino +9 more
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External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD should be kept smaller than the built-in potential of the body diode.
Shiro Hino +9 more
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Whole-body Fluorescent Optical Imaging Based on Power Light Emitting Diode
2005 IEEE Engineering in Medicine and Biology 27th Annual Conference, 2005With complex configuration, the general whole-body fluorescence optical imaging system is power-consuming for it is mainly composed of laser or mercury lamp, filter and fiber-optic cable. In this paper we aimed at setting up a compact imaging system based on power light emitting diode (LED).
Yanping, Chen +4 more
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Threshold Voltage Monitoring Method for SiC MOSFET Based on Body Diode Voltage under Body Effect
2021 IEEE 4th International Electrical and Energy Conference (CIEEC), 2021Threshold voltage (V TH ) shift caused by bias temperature instability (BTI) has become the most serious reliability problems in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). BTI-induced V TH shift is divided into recoverable shift and permanent shift.
Jinlei Xin +5 more
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Diode Lasers in Car‐Body Construction
Laser Technik Journal, 2013AbstractFor more than twelve years, diode lasers are used in series body manufacturing. The first diode laser was installed for brazing tailgates in the Audi A3 in 2001. The most recent generation was introduced last year [1]. For the current model, diode lasers braze tailgates and now even produce the joints between roof and side panels (Fig. 1).
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Comparison Study of Surge Current Capability of Body Diode of SiC MOSFET and SiC Schottky Diode
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018The superior performance of the SiC MOSFETs operating in synchronous mode converter without external antiparallel SiC Schottky diodes have been demonstrated recently. However, there are few studies of the surge current capability of the SiC MOSFET's body diode, leading severe concern for its ruggedness in practical power converter applications.
Xi Jiang +7 more
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A flexible ultra-thin-body SOI single-photon avalanche diode
2013 IEEE International Electron Devices Meeting, 2013The world's first flexible ultra-thin-body SOI single-photon avalanche diode (SPAD) is reported with peak photon detection probability (PDP) at 11%, dark count rate (DCR) around 20kHz and negligible afterpulsing and cross-talk. It compares favorably with CMOS SPADs while it can be bended to 10mm-diameter and operate both in frontside-(FSI) and backside-
Pengfei Sun +3 more
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