Results 221 to 230 of about 40,768 (253)

Comparison Study of Surge Current Capability of Body Diode of SiC MOSFET and SiC Schottky Diode

2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018
The superior performance of the SiC MOSFETs operating in synchronous mode converter without external antiparallel SiC Schottky diodes have been demonstrated recently. However, there are few studies of the surge current capability of the SiC MOSFET's body diode, leading severe concern for its ruggedness in practical power converter applications.
Xi Jiang, Dongyuan Zhai, Jianjun Chen, Fanxing Yuan, Zongjian Li, Zhizhi He, Z. John Shen, Jun Wang   +7 more
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The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's, 2004
This paper presents a comprehensive study of the body diode characteristics of high-channel density trench power MOSFETs using analytic modeling, 2-dimensional numerical simulation, and physical measurements. The results show that, for state-of-the-art trench MOSFETs, the body diode characteristics are strongly influenced by majority carriers in the ...
null Dolny, null Sapp, null Elbanhaway, null Wheatley   +3 more
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Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode

IEEE Transactions on Electron Devices, 2019
Under certain conditions, self-sustained oscillation may occur during reverse recovery transient of high-side silicon carbide (SiC) MOSFET body diode in the half-bridge circuit. In this article, two distinct positive feedback mechanisms that can excite the self-sustained oscillation are identified based on the double-pulse test.
Peng Xue, Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace   +4 more
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Gate-Controlled Reverse Recovery for Characterization of LDMOS Body Diode

IEEE Electron Device Letters, 2014
Reverse recovery behavior is a useful tool for monitoring lifetime variations in the body diode of power MOSFETs. However, correct interpretation of the laterally diffused MOSFET (LDMOS) reverse recovery is challenging and requires special attention. This is due to the fact that the stored charges in the LDMOS drift region can flow from two different ...
Arash Elhami Khorasani, Mark Griswold, T. L. Alford   +2 more
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Bipolar reverse recovery behavior of the body-diode of a SiC JFET

2013 15th European Conference on Power Electronics and Applications (EPE), 2013
This paper investigates the parasitic turn on during the reverse recovery of the body diode of the normally on 1200 V SiC JFET. During the reverse recovery flows a hole current through the space charge region. The hole current is increasing the charge in the space charge region and the gradient of electrical field increases.
Tobias Appel, Hans-Gunter Eckel
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Modelling, analysis, and experimental study of SiC JFET body diode

The European Physical Journal Applied Physics, 2010
Within Silicon Carbide Junction Field Effect Transistor (SiC-JFET) model, body diode is not extensively studied and almost under-researched. Body diode remains a complex device to study particularly during switching transients. In this paper, the JFET body diode is experimentally demonstrated to be a power. PiN diode.
Ben Salah, Tarek, Lahbib, Y., Morel, Hervé   +2 more
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Failure Analysis and Improvement of the Body Diode in Superjunction Power MOSFET

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2018
The characteristics of body diode are significant to the reliability of Superjunction power MOSFET (SJ-MOSFET). In the experiments of body diode reverse recovery of SJ - M OSFE T, it is found that there are two kinds of failure mechanisms: overvoltage caused by the snappy reverse recovery and overcurrent caused by the large peak reverse current ...
Min Ren, Mengqi Yang, Shengrong Zhong, Chi Xie, Zehong Li, Wei Gao, Jinping Zhang, Bo Zhang   +7 more
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Behaviour of the CoolMOS device and its body diode

31st European Solid-State Device Research Conference, 2001
K. Sheng, F. Udrea, G.A.J. Amaratunga, P.R. Palmer   +3 more
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Power Cycling Body Diode Current Flow on SiC MOSFET Device

2022 IEEE 28th International Symposium on On-Line Testing and Robust System Design (IOLTS), 2022
Giovanni Corrente, Nella Bentivegna, Sebastiano Russo   +2 more
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Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2023
Arman Ur Rashid, Britt Brooks, Steven Manz, Daniel J. Lichtenwalner, Sei-Hyung Ryu   +4 more
openaire   +1 more source