Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD. [PDF]
Materials (Basel), 2022 In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in the films was studied.
Jiao T +8 more
europepmc +5 more sources
4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance [PDF]
Energies, 2020 In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations.
Junghun Kim +2 more
exaly +4 more sources
A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
MicromachinesIn this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
doaj +4 more sources
A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance [PDF]
MicromachinesIn this paper, a novel asymmetric trench SiC MOSFET with a Poly-Si/SiC heterojunction diode (HJD-ATMOS) is designed to improve its reverse conduction characteristics and switching performance.
Yiren Yu +4 more
doaj +4 more sources
Characteristics and Electronic Band Alignment of a Transparent p-CuI/n-SiZnSnO Heterojunction Diode with a High Rectification Ratio [PDF]
Nanomaterials, 2021 Transparent p-CuI/n-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented p-CuI polycrystalline film on top of an amorphous n-SZTO film grown by the RF magnetron sputtering method.
Jeong Hyuk Lee +7 more
doaj +2 more sources
Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties [PDF]
Scientific Reports, 2018 Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work.
Monika Moun +4 more
doaj +2 more sources
Cupric oxide (CuO)/zinc oxide (ZnO) heterojunction diode with low turn-on voltage
Results in Physics, 2021 The p-n junction is the fundamental form of an electronic semiconductor device. A p-CuO/n-ZnO heterojunction diode was formed by using thermal evaporation and thermal oxidation techniques.
Roberto Lopez +2 more
exaly +3 more sources
In-fibre logic and memory via tuneable passivation–corrosion [PDF]
Nature CommunicationsTextile electronics with digital capabilities could sense, process, and store data, while providing immersive interaction with user and their immediate surroundings.
Yuanlong Li +4 more
doaj +2 more sources
One-Dimensional van der Waals Heterojunction Diode [PDF]
ACS Nano, 2021 29 pages, 6 ...
Ya Feng +6 more
openaire +3 more sources
Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode
Micromachines, 2021 Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR)
Yang Dai +10 more
doaj +1 more source