Rapid Cooling After Device Annealing Suppresses Interface Losses in Cu<sub>2</sub>ZnSnS<sub>4</sub> Solar Cells Enabling High Efficiency and Stability. [PDF]
Adv Sci (Weinh)Rapid cooling after device annealing regulates the CdS/CZTS heterojunction and Mo/CZTS back contact, suppressing interfacial recombination and modifying the interfacial MoS2 layer, thereby enabling a 15.9% indoor PCE in pure‐sulfide CZTS solar cells.
Nasyori A +16 more
europepmc +2 more sources
One-Dimensional van der Waals Heterojunction Diode [PDF]
ACS Nano, 2021 29 pages, 6 ...
Ya Feng +6 more
openaire +3 more sources
Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode
Micromachines, 2021 Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR)
Yang Dai +10 more
doaj +1 more source
Wide-bandwidth mode-hop-free tuning of extended-cavity GaN diode lasers [PDF]
, 2005 We present a new approach for extended-cavity diode-laser tuning to achieve wide mode-hop-free tuning ranges. By using a multiple piezoactuated grating mount, the cavity length and grating angle in the laser can be adjusted independently, allowing mode ...
Burns, I.S., Kaminski, C.F., Hult, J.
core +4 more sources
Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†
Hittite Journal of Science and Engineering, 2021 Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as ...
Merve Acar +3 more
doaj +1 more source
Investigation into the integration of a resonant tunnelling diode and an optical communications laser: model and experiment [PDF]
, 2007 A resonant tunnelling diode has been monolithically integrated with an optical communications laser [the resonant tunnelling diode (RTD-LD)] to form a simple optoelectronic integrated circuit (OEIC) that is a novel bistable device suitable for an optical
T.J. Slight +3 more
core +2 more sources
Integration of a resonant tunneling diode and an optical communications laser [PDF]
, 2006 We report on the first integration of a resonant tunneling diode and an optical communications laser operating at around 1.5 /spl μm.
Stanley, CR +14 more
core +1 more source
A planar Gunn diode operating above 100 GHz [PDF]
, 2007 We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlGaAs. There is a considerable interest in such devices since they lend themselves to integration into millimeter-wave and terahertz integrated circuits ...
Holland, M.C. +6 more
core +1 more source
Enhanced fluorescence of CsPbBr3/ZnO heterojunction enabled by titanium nitride nanoparticles
Materials Research Express, 2022 We prepared CsPbBr _3 /ZnO heterojunctions by self-assembling colloidal CsPbBr _3 quantum dots (QDs) on the surface of the ZnO film. The fluorescence of CsPbBr _3 /ZnO heterojunctions was modulated by titanium nitride nanoparticles (TiN NPs) to obtain ...
Jinguo Jiang +3 more
doaj +1 more source
A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
Energies, 2021 A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
doaj +1 more source