Results 21 to 30 of about 4,641 (290)
Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress [PDF]
, 2014 The current mechanism and effects of external transverse stress in the [110] orientation on the electrical properties of a single crystal (100) p-3C-SiC/p-Si heterojunction diode are reported for the first time. It has been observed that the current flow
Dzung, Viet Dao +9 more
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Enhanced fluorescence of CsPbBr3/ZnO heterojunction enabled by titanium nitride nanoparticles
Materials Research Express, 2022 We prepared CsPbBr _3 /ZnO heterojunctions by self-assembling colloidal CsPbBr _3 quantum dots (QDs) on the surface of the ZnO film. The fluorescence of CsPbBr _3 /ZnO heterojunctions was modulated by titanium nitride nanoparticles (TiN NPs) to obtain ...
Jinguo Jiang +3 more
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A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
Energies, 2021 A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
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A liénard oscillator resonant tunnelling diode-laser diode hybrid integrated circuit: model and experiment [PDF]
, 2008 We report on a hybrid optoelectronic integrated circuit based on a resonant tunnelling diode driving an optical communications laser diode. This circuit can act as a voltage controlled oscillator with optical and electrical outputs.
Wasige, E. +8 more
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Sensors, 2020 Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties.
Yoonsok Kim, Taeyoung Kim, Eun Kyu Kim
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Influence of external mechanical stress on electrical properties of single-crystal n-3C-SiC/p-Si heterojunction diode [PDF]
, 2015 This article reports for the first time the electrical properties of fabricated n-3C-SiC/p-Si heterojunction diodes under external mechanical stress in the [110] direction.
Tanner, Philip +8 more
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Journal of Materials Research and Technology, 2022 A 3-terminal device with a tunable Schottky barrier controls the charge transport across a vertically stacked structure named “barristor”- one composed of a graphene/rhenium diselenide (ReSe2) p-n heterojunction to exploit the advantages of the high ...
Thi Phuong-Anh Bach +7 more
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Preparation of Transparent N-Zno:Al / P-Cualcro2 Heterojunction Diodeby Sol-Gel Technology
Reviews on Advanced Materials Science, 2018 This paper presents the study of oxide film heterojunction made of CuAlCrO2 and ZnO:Al (AZO) deposited on fused quartz by sol-gel spin coating. Transmission electronmicroscopy (TEM) analysis has showed that the solvent, which was used to prepare the AZO ...
Shirshneva-Vaschenko E.V. +7 more
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Nanomaterials, 2023 Recently, the use of semiconductor-based photocatalytic technology as an effective way to mitigate the environmental crisis attracted considerable interest.
Yang Yu +7 more
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Current transport mechanism of n-TiO2/p-ZnO heterojunction diode [PDF]
, 2011 WOS:000296083900017The present work reports the fabrication and detailed electrical properties of n-TiO2/p-ZnO heterojunction diode. We have determined the electrical characteristics of the device such as current-voltage (I-V) and capacitance-voltage (C ...
Sönmezoğlu, Savaş +1 more
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