Results 41 to 50 of about 4,641 (290)
Room-Temperature Self-Powered Infrared Spectrometer Based on a Single Black Phosphorus Heterojunction Diode [PDF]
, 2023 Infrared spectrometers with the ability to resolve the spectral intensity and wavelength simultaneously are widely used in industry and the laboratory. However, their huge volume, high price, and cryogenic operating temperature limit their applications ...
Han Wang (254423) +2 more
core +1 more source
Open‐circuit voltage, fill factor, and heterojunction band offset in semiconductor diode solar cells
EcoMat, 2022 Semiconductor photovoltaics have been investigated for many years, and various materials and device architectures have been developed aiming for low cost and high efficiency.
Jizheng Wang
doaj +1 more source
Role of the Recombination Zone in Organic Light‐Emitting Devices
Advanced Materials, EarlyView.This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley +1 more source
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
Scientific Reports, 2017 Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct ...
Yannick Baines +7 more
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Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes
Results in Physics, 2016 Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure.
Arata Yasuda +2 more
doaj +1 more source
Advanced Electronic Materials, 2022 Field‐effect transistors (FETs) are the main building block of microelectronic devices. For most of the FETs, the conduction channel relies on either n‐type or p‐type semiconductor materials.
Liwei Liu +6 more
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Single‐Chromophore Homojunction Organic Solar Cells: A Path to Simplicity and Efficiency
Advanced Materials, EarlyView.This perspective discusses how the intrinsic optoelectronic properties of organic semiconductors, their molecular packing in the solid‐state, and internal energetic gradients within a device can enable free‐charge carrier generation in homojunction organic solar cells.
Shaun McAnally +2 more
wiley +1 more source
Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
AIP Advances, 2013 A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate.
Nazek El-Atab +6 more
doaj +1 more source
Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel [PDF]
, 2011 n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated.
S.Aksoy, Y.Caglar
core +1 more source
Advanced Materials, EarlyView.The field of polymer thermoelectrics is entering a new era, featuring breakthroughs in addressing the conventional performance disparity between p‐type and n‐type polymers, pioneering doping frontiers, and sophisticated decoupling strategies. This review explores innovations in molecular design and superior stabilities, bridging the gap from ...
Suhao Wang
wiley +1 more source