Results 41 to 50 of about 4,656 (298)
Room-Temperature Self-Powered Infrared Spectrometer Based on a Single Black Phosphorus Heterojunction Diode [PDF]
, 2023 Infrared spectrometers with the ability to resolve the spectral intensity and wavelength simultaneously are widely used in industry and the laboratory. However, their huge volume, high price, and cryogenic operating temperature limit their applications ...
Han Wang (254423) +2 more
core +1 more source
Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes
Results in Physics, 2016 Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure.
Arata Yasuda +2 more
doaj +1 more source
Open‐circuit voltage, fill factor, and heterojunction band offset in semiconductor diode solar cells
EcoMat, 2022 Semiconductor photovoltaics have been investigated for many years, and various materials and device architectures have been developed aiming for low cost and high efficiency.
Jizheng Wang
doaj +1 more source
Charge Generation and Recombination Pathways in All‐Polymer Bulk Heterojunction Solar Cells
Advanced Functional Materials, EarlyView.Multimodal spectroscopy and device analysis reveal how field‐dependent charge generation, transport limitations, and non‐geminate recombination govern performance losses in all polymer solar cells. The results identify the key processes controlling charge extraction and recombination, providing insights for the design of more efficient all‐polymer ...
Shahidul Alam +17 more
wiley +1 more source
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
Scientific Reports, 2017 Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct ...
Yannick Baines +7 more
doaj +1 more source
Advanced Electronic Materials, 2022 Field‐effect transistors (FETs) are the main building block of microelectronic devices. For most of the FETs, the conduction channel relies on either n‐type or p‐type semiconductor materials.
Liwei Liu +6 more
doaj +1 more source
SnO/β-Ga2O3 vertical pn heterojunction diodes [PDF]
Applied Physics Letters, 2020 As a contribution to (transparent) bipolar oxide electronics, vertical pn heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally doped p-type SnO layers with hole concentrations ranging from p=1018 to 1019 cm−3 on unintentionally doped n-type β-Ga2O3(−201) substrates with an electron concentration of n=2.0×1017
Melanie Budde +8 more
openaire +4 more sources
Advanced Functional Materials, EarlyView.Using nanobeam photoemission, we demonstrate imaging of the in‐plane and out‐of‐plane electric field landscape within a metal–semiconductor van der Waals heterostructure. We provide evidence for Schottky barrier formation that depends on the semiconductor thickness. ABSTRACT Achieving high‐performance optoelectronic devices based on two‐dimensional van
Dario Mastrippolito +17 more
wiley +1 more source
Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
AIP Advances, 2013 A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate.
Nazek El-Atab +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A gradient‐engineered all‐paper sensor is fabricated by integrating MXene and in situ grown AgNPs within hierarchical cellulose networks. The device breaks the sensitivity–detection range trade‐off through cascaded conductive pathways, enabling ultrahigh pressure sensitivity, humidity–pressure decoupled dual‐mode sensing, and outstanding EMI shielding,
Ao Li +7 more
wiley +1 more source