Results 41 to 50 of about 185,261 (290)

SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

Micromachines, 2022
A novel Silicon-Carbide heterojunction U-MOSFET embedded a P-type pillar buried in the drift layer (BP-TMOS) is proposed and simulated in this study. When functioning in the on state, the merged heterojunction structure will control the parasitic body ...
Shenglong Ran, Zhiyong Huang, Shengdong Hu, Han Yang   +3 more
doaj   +1 more source

Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

, 2014
The current mechanism and effects of external transverse stress in the [110] orientation on the electrical properties of a single crystal (100) p-3C-SiC/p-Si heterojunction diode are reported for the first time. It has been observed that the current flow
Dzung, Viet Dao, Tanner, Philip, Phan, Hoang Phuong, Hoang-Phuong, Phan, Dao, Dzung Viet, Dao, Dzung, Toan, Dinh, Qamar, Afzaal, Dinh, Toan, Phan, Hoang-Phuong   +9 more
core   +1 more source

Inkjet-printed carbon nanotube-MoS2 heterojunction p-n diodes

Nano Research
The p-n junction diode and field-effect transistor are foundational elements in modern electronics and optoelectronics. While high-performance field-effect devices have been realized using monolayered materials and their heterostructures, there has been ...
Fugu Tian, Dingzhou Cui, Mingrui Chen, Zhiyuan Zhao, Wenbo Chen, Zikuan Wang, Silvia Guadagnini, Sarah Alsaggaf, Shahad Albawardi, Michelle L. Povinelli, Moh R. Amer, Jia Grace Lu, Chongwu Zhou   +12 more
doaj   +1 more source

Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure

APL Materials, 2017
Among the various unique properties of two-dimensional materials, the ability to form a van der Waals (vdW) heterojunction between them is very valuable, as it offers a superior interface quality without the lattice mismatch problem. In this work, a ReS2/
Ah-Jin Cho, Seok Daniel Namgung, Hojoong Kim, Jang-Yeon Kwon   +3 more
doaj   +1 more source

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

IEEE Journal of the Electron Devices Society, 2022
A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss.
Hai-Yong Xu, Ying Wang, Meng-Tian Bao, Fei Cao   +3 more
doaj   +1 more source

Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes

Results in Physics, 2016
Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure.
Arata Yasuda, Ken Suto, Jun-ichi Nishizawa   +2 more
doaj   +1 more source

Open‐circuit voltage, fill factor, and heterojunction band offset in semiconductor diode solar cells

EcoMat, 2022
Semiconductor photovoltaics have been investigated for many years, and various materials and device architectures have been developed aiming for low cost and high efficiency.
Jizheng Wang
doaj   +1 more source

Influence of external mechanical stress on electrical properties of single-crystal n-3C-SiC/p-Si heterojunction diode

, 2015
This article reports for the first time the electrical properties of fabricated n-3C-SiC/p-Si heterojunction diodes under external mechanical stress in the [110] direction.
Tanner, Philip, Phan, Hoang Phuong, Dimitrijev, Sima, Dao, Dzung Viet, Dao, Dzung, Qamar, Afzaal, Dinh, Toan, Phan, Hoang-Phuong, Dao, Dzung Veit   +8 more
core   +1 more source

Heterojunction diode application of yttrium ıron oxide (Y3Fe5O12)

, 2022
In this study, the Cr/Y3Fe5O12/p-Si/Al heterojunction diode was fabricated with coating the Y3Fe5O12 interface material on p-Si using spin coating method. The role of Y3Fe5O12 material on the current conduction characteristics of diodes was investigated.
DENİZ, ALİ RIZA, Çaldıran, Zakir
core   +1 more source

Gradient‐Conductivity Architecture Enables Synchronous Enhancement of Sensitivity and Detection Range in Multifunctional All‐Paper Sensors

Advanced Functional Materials, EarlyView.
A gradient‐engineered all‐paper sensor is fabricated by integrating MXene and in situ grown AgNPs within hierarchical cellulose networks. The device breaks the sensitivity–detection range trade‐off through cascaded conductive pathways, enabling ultrahigh pressure sensitivity, humidity–pressure decoupled dual‐mode sensing, and outstanding EMI shielding,
Ao Li, Jun Xu, Dezhong Xu, Zhaohui Zhang, Jiyi Li, Daxian Cao, Kefu Chen, Mizi Fan   +7 more
wiley   +1 more source