Results 31 to 40 of about 4,641 (290)

NP Heterojunction Porous Silicon Light-Emitting Diode [PDF]

, 1991
We report the first demonstration of visible light emission from an all solid-state n-p heterojunction diode based on porous silicon. The p-type silicon was electrochemically etched in a hydrofluoric acid solution to form a porous silicon region; the n-p
F. Namavar, Nader M. Kalkhoran, H. P. Maruska   +2 more
core   +1 more source

Hot-Carrier Stressing of NPN Polysilicon Emitter Bipolar Transistors Incorporating Fluorine [PDF]

, 2003
The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon emitter NPN bipolar transistors have been examined. Forward Gummel plots, base emitter (BE) diode characteristics, and stress currents were measured during ...
Ashburn, P., Sheng, S R, Ashburn, P, McKinnon, W, McKinnon, W R, Sheng, S. R., Storey, C, Hamel, J S, Storey, Craig, McAlister, Sean, McAlister, S P, Hamel, J. S.   +11 more
core   +1 more source

Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions

SN Applied Sciences, 2021
Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent
Rama Venkata Krishna Rao, Ajinkya K. Ranade, Pradeep Desai, Golap Kalita, Hiroo Suzuki, Yasuhiko Hayashi   +5 more
doaj   +1 more source

Efficient Diode Performance with Improved Effective Carrier Lifetime and Absorption Using Bismuth Nanoparticles Passivated Silicon Nanowires

Nanomaterials, 2022
In this paper, we report a novel design of bismuth nanoparticle-passivated silicon nanowire (Bi@SiNW) heterojunction composites for high diode performances and improved effective carrier lifetime and absorption properties. High-density vertically aligned
Mariem Naffeti, Mohamed Ali Zaïbi, Alejandro Vidal García-Arias, Radhouane Chtourou, Pablo Aitor Postigo   +4 more
doaj   +1 more source

Heterojunction diode fabrication from polyaniline and a ferroelectric polymer [PDF]

, 2002
We have fabricated a p – n heterojunction diode by vapor depositing a thin film of polyaniline on top of the crystalline copolymer: poly(vinylidene fluoride with trifluoroethylene).
Bai, Mengjun, Dowben, Peter A., B. Xu, Y. Ovchenkov, B. Doudin, Ducharme, Stephen, Doudin, Bermard, A. V. Sorokin, A. N. Caruso, P. A. Dowben, Stephen Ducharme, Ovchenkov, Y., M. Bai, Caruso, A. N., Sorokin, A.V., Xu, B   +15 more
core   +2 more sources

SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

Micromachines, 2022
A novel Silicon-Carbide heterojunction U-MOSFET embedded a P-type pillar buried in the drift layer (BP-TMOS) is proposed and simulated in this study. When functioning in the on state, the merged heterojunction structure will control the parasitic body ...
Shenglong Ran, Zhiyong Huang, Shengdong Hu, Han Yang   +3 more
doaj   +1 more source

Inkjet-printed carbon nanotube-MoS2 heterojunction p-n diodes

Nano Research
The p-n junction diode and field-effect transistor are foundational elements in modern electronics and optoelectronics. While high-performance field-effect devices have been realized using monolayered materials and their heterostructures, there has been ...
Fugu Tian, Dingzhou Cui, Mingrui Chen, Zhiyuan Zhao, Wenbo Chen, Zikuan Wang, Silvia Guadagnini, Sarah Alsaggaf, Shahad Albawardi, Michelle L. Povinelli, Moh R. Amer, Jia Grace Lu, Chongwu Zhou   +12 more
doaj   +1 more source

Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure

APL Materials, 2017
Among the various unique properties of two-dimensional materials, the ability to form a van der Waals (vdW) heterojunction between them is very valuable, as it offers a superior interface quality without the lattice mismatch problem. In this work, a ReS2/
Ah-Jin Cho, Seok Daniel Namgung, Hojoong Kim, Jang-Yeon Kwon   +3 more
doaj   +1 more source

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

IEEE Journal of the Electron Devices Society, 2022
A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss.
Hai-Yong Xu, Ying Wang, Meng-Tian Bao, Fei Cao   +3 more
doaj   +1 more source

Electrical characterization of nanocluster n-CdO/p-Si heterojunction diode [PDF]

, 2010
WOS: 000282242700039The nanocluster n-CdO/p-Si heterojunction diode was fabricated by sol-gel method. The structural and optical properties of the nanocluster CdO film have been investigated.
Yakuphanoğlu, Fahrettin, Fahrettin Yakuphanoglu, Çağlar, Yasemin, Ilıcan, Saliha, Saliha Ilican, Çağlar, Müjdat, Mujdat Caglar, Yasemin Caglar   +7 more
core   +1 more source