Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode [PDF]
Advances in Condensed Matter Physics, 2020 The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method.
Sadia Muniza Faraz +4 more
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Peculiarities of Temperature Dependence of Detected Voltage by GaAs/Al0.25Ga0.75As Heterojunction Microwave Diode Near Interwalley Crossover [PDF]
Medžiagotyra, 2014 In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures.
Algirdas SUŽIEDĖLIS +10 more
doaj +2 more sources
Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method [PDF]
EPJ Web of Conferences, 2017 In this work, p-CuGaO2/n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates.
Lam Mui Li +6 more
doaj +5 more sources
The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode. [PDF]
Materials (Basel), 2016 Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO ...
Chang WC, Su SC, Wu CC.
europepmc +2 more sources
Lateral Heterojunction Diode [PDF]
, 2021 The thickness-dependent band structure of 2D materials has enabled the construction of in-plane lateral heterojunction within the same material platform.
Chang, Jiwon +9 more
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Heterojunction diode application of yttrium ıron oxide (Y3Fe5O12) [PDF]
, 2022 In this study, the Cr/Y3Fe5O12/p-Si/Al heterojunction diode was fabricated with coating the Y3Fe5O12 interface material on p-Si using spin coating method. The role of Y3Fe5O12 material on the current conduction characteristics of diodes was investigated.
DENİZ, ALİ RIZA, Çaldıran, Zakir
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Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†
Hittite Journal of Science and Engineering, 2021 Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as ...
Merve Acar +3 more
doaj +1 more source
Investigation into the integration of a resonant tunnelling diode and an optical communications laser: model and experiment [PDF]
, 2007 A resonant tunnelling diode has been monolithically integrated with an optical communications laser [the resonant tunnelling diode (RTD-LD)] to form a simple optoelectronic integrated circuit (OEIC) that is a novel bistable device suitable for an optical
T.J. Slight +3 more
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Integration of a resonant tunneling diode and an optical communications laser [PDF]
, 2006 We report on the first integration of a resonant tunneling diode and an optical communications laser operating at around 1.5 /spl μm.
Stanley, CR +14 more
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A planar Gunn diode operating above 100 GHz [PDF]
, 2007 We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlGaAs. There is a considerable interest in such devices since they lend themselves to integration into millimeter-wave and terahertz integrated circuits ...
Holland, M.C. +6 more
core +1 more source