Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD. [PDF]
Materials (Basel), 2022 In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping.
Jiao T +8 more
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A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
MicromachinesIn this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
doaj +3 more sources
Characteristics and Electronic Band Alignment of a Transparent p-CuI/n-SiZnSnO Heterojunction Diode with a High Rectification Ratio [PDF]
Nanomaterials, 2021 Transparent p-CuI/n-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented p-CuI polycrystalline film on top of an amorphous n-SZTO film grown by the RF magnetron sputtering method.
Jeong Hyuk Lee +7 more
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Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties [PDF]
Scientific Reports, 2018 Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work.
Monika Moun +4 more
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A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance [PDF]
MicromachinesIn this paper, a novel asymmetric trench SiC MOSFET with a Poly-Si/SiC heterojunction diode (HJD-ATMOS) is designed to improve its reverse conduction characteristics and switching performance.
Yiren Yu +4 more
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Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode
Advances in Condensed Matter Physics, 2020 The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method.
Sadia Muniza Faraz +4 more
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A Diamond Silicon Heterojunction Diode
MRS Proceedings, 1989 Thin diamond films were grown on low resistivity p-type Si wafers by microwave plasma assisted chemical vapor deposition. Using gold contacts, diode-like behavior was observed and forward bias current densities in excess of 5 A/cm2 were obtained. Reverse
R. M. Cohen +2 more
core +2 more sources
Medžiagotyra, 2014 In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures.
Algirdas SUŽIEDĖLIS +10 more
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In-fibre logic and memory via tuneable passivation–corrosion [PDF]
Nature CommunicationsTextile electronics with digital capabilities could sense, process, and store data, while providing immersive interaction with user and their immediate surroundings.
Yuanlong Li +4 more
doaj +2 more sources
EPJ Web of Conferences, 2017 In this work, p-CuGaO2/n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates.
Lam Mui Li +6 more
doaj +2 more sources