Results 51 to 60 of about 4,641 (290)

Manufacturing Zener diode using ZnO-CuO-ZnO/Si structures deposited laser induced plasma technique

open access: yesIraqi Journal of Physics, 2019
        In this paper Zener diode was manufactured using ZnO-CuO-ZnO/Si heterojunction structure that used laser induced plasma technique to prepare the nanofilms.
Safa kamal mustafa
doaj   +1 more source

The characteristics of ZnS/Si heterojunction diode fabricated by thermionic vacuum arc [PDF]

open access: yes, 2017
ZnS/p-Si heterojunction diode has been successfully fabricated by depositing the ZnS thin films on p-type Si substrates using thermionic vacuum arc technique (TVA).

core   +1 more source

Organic Materials of Tomorrow: Horizons of Artificial Intelligence

open access: yesAdvanced Materials, EarlyView.
This review examines machine learning techniques accelerating the discovery of organic semiconductors by linking molecular structure to properties. Key methods include graph neural networks, generative models, and active learning. Applications to organic photovoltaics demonstrate practical impact.
Harold Mena   +3 more
wiley   +1 more source

Nanostructured Electrodes for Organic Solar Cells: Analysis and Design Fundamentals [PDF]

open access: yes, 2012
Nanostructured electrodes (NEs) improve optical absorption and charge collection in photovoltaic (PV) devices. Traditionally, the electrodes have been designed exclusively for higher optical absorption.
Alam, Muhammad A.   +3 more
core   +2 more sources

Rethinking Charge Transport and Recombination in Donor‐Diluted Organic Solar Cells

open access: yesAdvanced Materials, EarlyView.
Organic solar cells with 1–45% PM6 content in Y12 were studied to link structure and charge dynamics to performance. The conductivity follows a 3D percolation model without a sharp threshold. Donor dilution preserves the photogeneration yield, but limits the fill factor due to transport resistance losses.
Chen Wang   +14 more
wiley   +1 more source

Planar hybrid heterostructures on the monolayer – GaN system

open access: yesВісник Харківського національногоуніверситету імені В.Н. Каразіна. Серія: Радіофізика та електроніка
Background. Graphene-like two-dimensional (2D) materials as promising for creating the future element base of electronics are considered. Interactions between layers of two-dimensional materials are not limited by chemical bonding and matching of the ...
O. V. Botsula   +3 more
doaj   +1 more source

Highly-mismatched InAs/InSe heterojunction diodes [PDF]

open access: yesApplied Physics Letters, 2016
We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room ...
A. V. Velichko   +9 more
openaire   +5 more sources

An investigation of Zn/ZnO:Al/p-Si/Al heterojunction diode by sol-gel spin coating technique [PDF]

open access: yes, 2014
Present study shows the structural, morphological, optical characterization of sol-gel spin coated ZnO:Al film and investigation of device efficiency of Zn/ZnO:Al/p-Si/Al heterojunction diode structure.
DUMAN, S.   +5 more
core   +1 more source

Large‐Scale Determination of Frontier Orbital Energies of Disordered Small‐Molecule Organic Semiconductors Using Exciplex Emission Spectra

open access: yesAdvanced Materials, EarlyView.
ABSTRACT Accurately knowing the frontier orbital energies of the structurally disordered small‐molecule organic semiconductors that are used in optoelectronic devices such as organic light‐emitting diodes is required to rationally improve their performance. Here, we show that these energies can be deduced with a large accuracy from the peak energies of
Christian B. McDonald   +7 more
wiley   +1 more source

Multifunctional black phosphorus/MoS2 van der Waals heterojunction

open access: yesNanophotonics, 2020
The fast-developing information technology has imposed an urgent need for effective solutions to overcome the limitations of integration density in chips with smaller size but higher performance.
Jiang Xixi   +10 more
doaj   +1 more source

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