Results 71 to 80 of about 185,261 (290)

Large‐Scale Determination of Frontier Orbital Energies of Disordered Small‐Molecule Organic Semiconductors Using Exciplex Emission Spectra

Advanced Materials, EarlyView.
ABSTRACT Accurately knowing the frontier orbital energies of the structurally disordered small‐molecule organic semiconductors that are used in optoelectronic devices such as organic light‐emitting diodes is required to rationally improve their performance. Here, we show that these energies can be deduced with a large accuracy from the peak energies of
Christian B. McDonald, Hiroki Tomita, Giacomo Cotelli, Louka L. Brüll, Nanno G. de Rooij, Lucas R.L. Norg, Milo Clément, Reinder Coehoorn   +7 more
wiley   +1 more source

Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy

, 2001
SiGe heterojunction bipolar transistors (HTBs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p+ SiGe base and n-Si emitter cap.
Ashburn, Peter, Lamb, Andrew C., Bonar, J.M., Cristiano, Fuccio, Hemment, Peter L. F., Hall, Stephen, Schiz, J.F.W.   +6 more
core   +1 more source

Metal-semiconductor Schottky diode with Landauer’s formalism

Nano Express
The Schottky barrier diode is a unipolar electronic device formed by the heterojunction of a metal and a semiconductor, widely used in various electronic and optoelectronic applications.
Antonio Di Bartolomeo, Kimberly Intonti, Luciano Peluso, Rosangela Di Marco, Gerardo Vocca, Francesco Romeo, Filippo Giubileo, Alessandro Grillo, Elif Orhan   +8 more
doaj   +1 more source

Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures

Frontiers in Chemistry, 2020
In the present study, an n-ZnO nanorods (NRs)/p-degenerated diamond tunneling diode was investigated with regards to its temperature-dependent negative differential resistance (NDR) properties and carrier tunneling injection behaviors.
Dandan Sang, Jiaoli Liu, Xiaofeng Wang, Dong Zhang, Feng Ke, Haiquan Hu, Wenjun Wang, Bingyuan Zhang, Hongdong Li, Bo Liu, Qinglin Wang   +10 more
doaj   +1 more source

Novel negative capacitance, conductance at high and low frequencies in Au/Polypyrrole –MWCNT composite /TiO2/Al2O3/n-Si structure

Materials Research Express, 2021
The paper presents a new approach based on the appearance of negative capacitance (NC) at high and low frequencies; previously, researchers agreed that NC only occurred at high or low frequencies.
A Ashery, A E H Gaballah, Emad M Ahmed
doaj   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

AIP Advances
The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The devices
Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton   +4 more
doaj   +1 more source

Morphological, Optical, and Electrical Properties of p-Type Nickel Oxide Thin Films by Nonvacuum Deposition

Nanomaterials, 2020
In this study, a p-type 2 at% lithium-doped nickel oxide (abbreviation L2NiO) solution was prepared using Ni(NO3)2·6H2O, and LiNO3·L2NiO thin films were deposited using an atomizer by spraying the L2NiO solution onto a glass substrate.
Chien-Chen Diao, Chun-Yuan Huang, Cheng-Fu Yang, Chia-Ching Wu   +3 more
doaj   +1 more source

CVD Grown Hybrid MoSe2–WSe2 Lateral/Vertical Heterostructures With Strong Interlayer Exciton Emission

Advanced Materials, EarlyView.
A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain, Sai Shradha, Axel Printschler, Julian Picker, Luc F. Oswald, Julian Führer, Nicole Engel, Honey Jayeshkumar Shah, Christof Neumann, Daria I. Markina, Moritz Quincke, Johannes Biskupek, Kenji Watanabe, Takashi Taniguchi, Ute Kaiser, Bernhard Urbaszek, Andrey Turchanin   +16 more
wiley   +1 more source

Scalable manufacture of vertical p‐GaN/n‐SnO2 heterostructure for self‐powered ultraviolet photodetector, solar cell and dual‐color light emitting diode

InfoMat, 2021
Vertical SnO2 based p‐n junctions are pivotal since they built the core components in photoelectronic systems. Nevertheless, preparation of high‐quality p‐SnO2 with controllable hole mobility and concentration is still a great challenge owing to the self‐
Longxing Su, Yuqing Zuo, Jin Xie
doaj   +1 more source