Results 81 to 90 of about 185,261 (290)

Determining the optimum morphology in high-performance polymer-fullerene organic photovoltaic cells [PDF]

open access: yes, 2013
This work was supported by the Engineering and Physical Sciences Research Council (grant number EP/I013288/1) and from the European Union Seventh Framework Programme under grant agreement 321305.The morphology of bulk heterojunction organic photovoltaic ...
Samuel, Ifor David William   +14 more
core   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

open access: yesAdvanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho   +17 more
wiley   +1 more source

Multiple thermal spin transport performances of graphene nanoribbon heterojuction co-doped with Nitrogen and Boron

open access: yesScientific Reports, 2017
Graphene nanoribbon is a popular material in spintronics owing to its unique electronic properties. Here, we propose a novel spin caloritronics device based on zigzag graphene nanoribbon (ZGNR), which is a heterojunction consisting of a pure single ...
Hai Huang   +6 more
doaj   +1 more source

Study of Electrical Properties of p-PbSe/p-Si Heterojunction [PDF]

open access: yesEngineering and Technology Journal, 2007
Electrical properties of p-PbSe/p-Si heterojunction detector have beeninvestigated. The electrical properties under dark condition show a rectifyingbehaviour with low rectification factor, and exhibits soft breakdown reversecurrent.C-V characteristics ...
Uday Nayef
doaj   +1 more source

Spectrally Programmable Spin‐Polarized Photocurrents in WSe2–NiPS3 Magnetic van der Waals Heterostructures

open access: yesAdvanced Materials, EarlyView.
Heterostructure photodiode devices of p‐type WSe2 with n‐type NiPS3 constructs spectrally protected spin‐polarized photocurrents. The energy of the excitation photon serves as an independent control parameter for spin‐selective photocurrent generation. ABSTRACT Efficient generation and control of spin‐polarized currents in semiconductors remain central
Rajesh Kumar Yadav   +8 more
wiley   +1 more source

Ionic liquid gel gate tunable p-Si/MoS2 heterojunction p-n diode

open access: yesAIP Advances, 2020
Monolayer MoS2 crystals investigated in this work were grown via chemical vapor deposition on Si/SiO2 substrates. Using a wet KOH etch, these crystals were transferred onto the edge of a freshly cleaved p-Si/SiO2 wafer where they formed mechanically ...
Kelotchi S. Figueroa   +4 more
doaj   +1 more source

Current transport mechanism of n-TiO2/p-ZnO heterojunction diode

open access: yes, 2011
WOS:000296083900017The present work reports the fabrication and detailed electrical properties of n-TiO2/p-ZnO heterojunction diode. We have determined the electrical characteristics of the device such as current-voltage (I-V) and capacitance-voltage (C ...
Sönmezoğlu, Savaş   +1 more
core   +1 more source

Spectrally Coordinated Plasmonic–Photothermal Photocatalysts for Mineralization of Mixed Indoor VOCs Under White LED Illumination

open access: yesAdvanced Materials, EarlyView.
A plasmonic–photothermal–photocatalytic hybrid comprising Cu(II)‐grafted TiO2, yolk–shell Au@SiO2, and reduced graphene oxide sheets (CuT/AuSi‐GS) harvests full‐spectrum white light‐emitting diode (LED) light via complementary photocatalytic oxidation, localized surface‐plasmon‐resonance‐induced electric‐field enhancement, and photothermal acceleration.
Minhyung Lee   +10 more
wiley   +1 more source

NP Heterojunction Porous Silicon Light-Emitting Diode

open access: yes, 1991
We report the first demonstration of visible light emission from an all solid-state n-p heterojunction diode based on porous silicon. The p-type silicon was electrochemically etched in a hydrofluoric acid solution to form a porous silicon region; the n-p
F. Namavar   +2 more
core   +1 more source

Regulating Phase Evolution and Crystallization Dynamics Enables Low Open‐Circuit Voltage Deficit in Wide‐Bandgap Cu2ZnSnS4 Solar Cells

open access: yesAdvanced Materials, EarlyView.
Bilayer composition‐modulated sulfurization (BCMS) regulates Cu redistribution in solution‐processed Cu2ZnSnS4, suppressing Cu2SnS3 and favoring the direct transformation pathway, while transforming the crystallization from surface‐dominated growth to a more synchronized process.
Hang Geng   +10 more
wiley   +1 more source

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