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Characterization and modeling of SiC MOSFET body diode
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016In this paper, the static and switching characterizations of a SiC MOSFET's body diode are presented. The static characterization of SiC MOSFET's body diode is carried out using a curve tracer and a double pulse test bench is built to characterize the inductive switching behavior of SiC MOSFET's body diode.
Enrico Santi, Kang Peng
exaly +2 more sources
An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode
Materials Science Forum, 2019This paper presents a dynamic investigation of the body diode behavior of MOSFETs rated for 3.3kV applications. The body diodes of MOSFETs with different cell designs and pitch sizes have been used. The turn-off behavior of the body diode is compared to that of a 3.3kV JBS diode.
VÍCTOR Soler +2 more
exaly +2 more sources
Materials Science Forum, 2017
External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD should be kept smaller than the built-in potential of the body diode.
Shiro Hino +2 more
exaly +2 more sources
External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD should be kept smaller than the built-in potential of the body diode.
Shiro Hino +2 more
exaly +2 more sources
Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs
Materials Science Forum, 2020The aim of this study is to investigate the main contributing factors to the degradation of the intrinsic body diode in SiC MOSFETs, caused by the expansion of stacking faults (SFs) from the substrate into the epitaxial layer, and how it affects their performance.
Andrei Mihaila +2 more
exaly +2 more sources
Analysis of the reverse recovery oscillation of superjunction MOSFET body diode
Solid-State Electronics, 2017Abstract The voltage and current oscillations occasionally occur during the reverse recovery transient of the superjunction MOSFET body diode. This paper identifies the unique reverse recovery oscillation characteristics of the superjunction MOSFET body diode.
Peng Xue, Guicui Fu
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Failure Mechanism Detection Algorithm with MOSFET Body Diode
2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2021Autonomous driving is playing a big role in the automotive industry and defines the future of mobility on a big scale. However, autonomous driving faces several challenges, such as the performance of artificial intelligence and hardware reliability. To ensure safe functionality, the reliability of the electronic components plays an essential role and ...
El Khatib, Mohamad +2 more
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Efficacy of a multiple diode laser system for body contouring
Lasers in Surgery and Medicine, 2011AbstractBackground and ObjectivesLow‐level laser therapy (LLLT) has been shown to induce cellular reactions in nonphotosynthetic cells however skepticism remains regarding efficacy at the clinical level. The purpose of this study was to evaluate the efficacy of LLLT independent of liposuction.
Courtney M L, Elm +3 more
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Floating-Body Diode—A Novel DRAM Device
IEEE Electron Device Letters, 2012A novel 8F2 DRAM cell is introduced, consisting of two gates controlling a low-doped silicon-on-insulator channel and opposite-polarity source and drain. Simulation with models calibrated to experimental floating-body cell data confirms virtual thyristor memory operation and demonstrates 85°C retention time in excess of 10 ms in a scaled FinFET ...
Uygar E. Avci +2 more
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2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020
The aim of this paper is to evaluate and understand the failure mechanism due to reverse recovery of the intrinsic body diode of the Super Junction MOSFET in terms of physical processes both inside the device and at the converter level. Nowadays, higher reliability and theoretically failure free systems are in high demand in order to maintain service ...
Domenico Nardo +2 more
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The aim of this paper is to evaluate and understand the failure mechanism due to reverse recovery of the intrinsic body diode of the Super Junction MOSFET in terms of physical processes both inside the device and at the converter level. Nowadays, higher reliability and theoretically failure free systems are in high demand in order to maintain service ...
Domenico Nardo +2 more
openaire +1 more source