Results 1 to 10 of about 21,162 (251)

Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET [PDF]

Micromachines, 2019
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (
Hui Li, Renze Yu, Yi Zhong, Ran Yao, Xinglin Liao, Xianping Chen   +5 more
doaj   +2 more sources

SiC MOSFETs capacitance study

e-Prime - Advances in Electrical Engineering, Electronics and Energy, 2023
SiC MOSFTEs are widely used nowadays for a large number of power applications. Even though they are more performant than their Silicon counterpart, they suffer from some issues which are still unsolved. Among these, the high traps concentration existing at the SiC/SiO2 interface is one of the main concerns while evaluating the device performance.
Ilaria Matacena, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, Santolo Daliento   +5 more
openalex   +4 more sources

Study of 3C-SiC Power MOSFETs. [PDF]

Micromachines (Basel)
This work presents the simulation and design of 3C-SiC power MOSFETs, focusing on critical parameters including avalanche impact ionization, breakdown voltage, bulk and channel mobilities, and the trade-off between on-resistance and breakdown voltage. The device design is carried out by evaluating the blocking voltage of scaled structures as a function
Fardi H.
europepmc   +4 more sources

Comparing SiC MOSFET, IGBT and Si MOSFET in LV distribution inverters [PDF]

IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society, 2015
Efficency, power quality and EMI are three crucial performance drivers in LVDC applications such as electrical supply, EV charging or DC aerospace. Recent developments in SiC MOSFETs and MMC for LVDC promise two significant improvements in LVDC inverter ...
Finney, S.J., Roscoe, N.M., Zhong, Y.
core   +4 more sources

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance [PDF]

Micromachines
In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations.
Rongyao Ma, Ruoyu Wang, Hao Fang, Ping Li, Longjie Zhao, Hao Wu, Zhiyong Huang, Jingyu Tao, Shengdong Hu   +8 more
doaj   +2 more sources

Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs [PDF]

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021
In this paper, a comprehensive comparative analysis is performed on the short circuit (SC) withstand time and failure modes between a 650 V SiC Planar MOSFET, a 650 V SiC Trench MOSFET and a 650 V SiC Cascode JFET. The short circuit tests have been performed at a DC link voltage of 400 V with gate turn-OFF voltages at 0 V and -5 V.
Bashar, Erfan, Wu, Ruizhu, Agbo, Nereus, Mendy, Simon, Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M.   +6 more
openaire   +3 more sources

Recent research progress of single particle effect of SiC MOSFET

He jishu, 2022
With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui, GUO Gang, LI Zhiming, ZHANG Fuqiang, CHEN Qiming, HAN Jinhua, YANG Xinyu   +6 more
doaj   +1 more source

A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

Energies, 2021
Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity.
Hongyan Zhao, Jiangui Chen, Yan Li, Fei Lin   +3 more
doaj   +1 more source

Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

IEEE Open Journal of Power Electronics, 2021
In this paper, performance at 1st and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using ...
Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Phil Mellor   +5 more
doaj   +1 more source

The Influence of Special Environments on SiC MOSFETs

Materials, 2023
In this work, the influences of special environments (hydrogen gas and high temperature, high humidity environments) on the performance of three types of SiC MOSFETs are investigated. The results reveal several noteworthy observations. Firstly, after 500 h in a hydrogen gas environment, all the SiC MOSFETs exhibited a negative drift in threshold ...
Zhigang Li, Jie Jiang, Zhiyuan He, Shengdong Hu, Yijun Shi, Zhenbo Zhao, Yigang He, Yiqiang Chen, Guoguang Lu   +8 more
openaire   +2 more sources