Results 21 to 30 of about 225,573 (220)
High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module
IEEE Journal of the Electron Devices Society, 2021 SiC MOSFET allows higher temperature capability with higher switching efficiency than that of conventional Si devices, due to its superior electrical and thermal properties.
Yue Chen +3 more
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Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]
, 2016 This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
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Self-Adaption Dead-Time Setting for the SiC MOSFET Boost Circuit in the Synchronous Working Mode
IEEE Access, 2022 To improve the DC-bus voltage and the switching frequency of the boost circuit and reduce the volume of the passive filter element and the heatsink, the SiC MOSFET should be used as the main switching device.
Lei Zhang +5 more
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Recent Advances in Short Circuit Protection Methods for SiC MOSFET [PDF]
MATEC Web of Conferences, 2023 Due to its high efficiency, low switching losses, and high temperature stability, Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been widely used in various fields.
Gao Tiecheng
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An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET
IEEE Access, 2020 Silicon Carbide (SiC) MOSFET has undergone a rapid development and commercialization in recent years due to its superior features. However, the mainstream commercial SiC MOFESTs are often fitted to packages that are previously designed for silicon-based ...
Weichi Zhang +5 more
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A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm
IEEE Access, 2021 In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasitic parameters where crosstalk phenomenon in bridge arm will occur.
Yaodong Zhu +4 more
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Switching investigations on a SiC MOSFET in a TO-247 package [PDF]
IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society, 2014 This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247 package, has a major influence on the switching energy ...
Alexander Anthon +3 more
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Energy capability of SiC MOSFETs [PDF]
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016 The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future power semiconductor devices. A lower boundary of the die size can be obtained from the thermal impedance required to withstand the high power dissipation during a short-circuit event.
Christian Unger, Martin Pfost
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e-Prime - Advances in Electrical Engineering, Electronics and Energy, 2023 SiC MOSFTEs are widely used nowadays for a large number of power applications. Even though they are more performant than their Silicon counterpart, they suffer from some issues which are still unsolved. Among these, the high traps concentration existing at the SiC/SiO2 interface is one of the main concerns while evaluating the device performance.
Matacena I. +5 more
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Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices
Power Electronic Devices and Components, 2022 Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT.
Lubin Han +4 more
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