Results 11 to 20 of about 4,517 (219)
Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode
IEEE Journal of the Electron Devices Society, 2021 A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation.
Ya Liang Zheng +4 more
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Study on Anti-surge Capacity of Body Diode of 1 200 V SiC MOSFET
机车电传动, 2021 The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment.
Chao CHEN +3 more
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Journal of Applied Technology and Innovation, 2020 SIC Mosfet plays a huge role in power converters and it works under high voltage, high switching frequencies and high temperatures. SiC MOSFETS are widely used in converters are inverters due to their strength but, when connected in half-bridge configurations, there are positive and negative voltage spikes when switching at high frequencies which ...
Uzair Ahmed +2 more
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Recent Advances in Short Circuit Protection Methods for SiC MOSFET [PDF]
MATEC Web of Conferences, 2023 Due to its high efficiency, low switching losses, and high temperature stability, Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been widely used in various fields.
Gao Tiecheng
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A review on research development of SiC trench gate MOSFET technology
机车电传动, 2023 The third-generation wide-bandgap semiconductor silicon carbide (SiC) MOSFET devices have rapidly become a research hotspot in the production and research sectors due to their advantages, such as high voltage resistance, high-temperature resistance and ...
LUO Haihui +3 more
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A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package [PDF]
IEEE Open Journal of Power ElectronicsThe conventional TO-247-3 packages with single-sided cooling limit the thermal and electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided cooling press-pack (PP) packaging approach for the discrete SiC MOSFET device is ...
Ran Yao +7 more
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Evaluation of Silicone Carbide Mosfet Driving Circuit Performance
CommunicationsThe performances of different driving circuits configurations designed for silicon carbide MOSFET transistors are compared in this research. The simulation of the double-pulse test (DPT) was performed with the use of three driving circuit configurations.
Veronika Švárna, Michal Frivaldsky
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Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch
IEEE Access, 2023 SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and ...
Haihong Qin +6 more
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SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance
IEEE Journal of the Electron Devices Society, 2020 In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCDMOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed ...
Xintian Zhou +7 more
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A High Efficiency and Low Cost ANPC Inverter Using Hybrid Si/SiC Switches
IEEE Open Journal of Industry Applications, 2021 This paper presents a performance investigation and design optimization of a high efficiency three-level Active Neutral Point Clamped (ANPC) inverter topology using hybrid Si/SiC switches.
Dereje Woldegiorgis +3 more
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