Progress in SiC MOSFET Reliability
ECS Transactions, 2013 Bias-temperature stress experiments performed on two generations of SiC power MOSFETs from the same manufacturer show reductions in threshold voltage (VT) shift at elevated temperatures from first- to second-generation. The negative VT shift is reduced from a range of -1 V to -1.6 V to a range of -100 mV to -300 mV for temperatures from 125°C to 175°C.
David R. Hughart +5 more
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Problems related to the correct determination of switching power losses in high-speed SiC MOSFET power modules [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2022 High-speed switching capabilities of SiC MOSFET power modules allow building high power converters working with elevated switching frequencies offering high efficiencies and high power densities.
Dawid Zięba, Jacek Rąbkowski
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Evaluation and Suppression Method of Turn-Off Current Spike for SiC/Si Hybrid Switch
IEEE Access, 2023 SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and ...
Haihong Qin +6 more
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SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance
IEEE Journal of the Electron Devices Society, 2020 In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCDMOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed ...
Xintian Zhou +7 more
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A High Efficiency and Low Cost ANPC Inverter Using Hybrid Si/SiC Switches
IEEE Open Journal of Industry Applications, 2021 This paper presents a performance investigation and design optimization of a high efficiency three-level Active Neutral Point Clamped (ANPC) inverter topology using hybrid Si/SiC switches.
Dereje Woldegiorgis +3 more
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Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode
IEEE Journal of the Electron Devices Society, 2021 A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation.
Ya Liang Zheng +4 more
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Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors
Crystals, 2023 Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility of up to 300 cm2V−1s−1, which is considered a promising candidate for next-generation power devices.
Maolin Zhang +5 more
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A Comprehensive loss analysis of SiC-based DAB DC-DC converter for electric vehicle application [PDF]
E3S Web of Conferences, 2023 This paper presents loss analysis of SiC MOSFET based bidirectional DAB (Dual Active Bridge) DC-DC converter for EV application. This converter benefits the efficiency of the EV vehicle by reducing power loss and voltage drop across the converter.
Kalandar Kasim Resma, Robert Femi
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SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions [PDF]
, 2017 The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V.
Acanski M. +12 more
core +2 more sources
A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm
IEEE Access, 2021 In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasitic parameters where crosstalk phenomenon in bridge arm will occur.
Yaodong Zhu +4 more
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