Results 11 to 20 of about 225,573 (220)
Journal of Applied Technology and Innovation, 2020 SIC Mosfet plays a huge role in power converters and it works under high voltage, high switching frequencies and high temperatures. SiC MOSFETS are widely used in converters are inverters due to their strength but, when connected in half-bridge configurations, there are positive and negative voltage spikes when switching at high frequencies which ...
Uzair Ahmed +2 more
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Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode
IEEE Journal of the Electron Devices Society, 2021 A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation.
Ya Liang Zheng +4 more
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Study on Anti-surge Capacity of Body Diode of 1 200 V SiC MOSFET
机车电传动, 2021 The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment.
Chao CHEN +3 more
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A review on research development of SiC trench gate MOSFET technology
机车电传动, 2023 The third-generation wide-bandgap semiconductor silicon carbide (SiC) MOSFET devices have rapidly become a research hotspot in the production and research sectors due to their advantages, such as high voltage resistance, high-temperature resistance and ...
LUO Haihui +3 more
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Evaluation of Silicone Carbide Mosfet Driving Circuit Performance
CommunicationsThe performances of different driving circuits configurations designed for silicon carbide MOSFET transistors are compared in this research. The simulation of the double-pulse test (DPT) was performed with the use of three driving circuit configurations.
Veronika Švárna, Michal Frivaldsky
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Progress in SiC MOSFET Reliability
ECS Transactions, 2013 Bias-temperature stress experiments performed on two generations of SiC power MOSFETs from the same manufacturer show reductions in threshold voltage (VT) shift at elevated temperatures from first- to second-generation. The negative VT shift is reduced from a range of -1 V to -1.6 V to a range of -100 mV to -300 mV for temperatures from 125°C to 175°C.
David R. Hughart +5 more
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SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance
IEEE Journal of the Electron Devices Society, 2020 In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCDMOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed ...
Xintian Zhou +7 more
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A High Efficiency and Low Cost ANPC Inverter Using Hybrid Si/SiC Switches
IEEE Open Journal of Industry Applications, 2021 This paper presents a performance investigation and design optimization of a high efficiency three-level Active Neutral Point Clamped (ANPC) inverter topology using hybrid Si/SiC switches.
Dereje Woldegiorgis +3 more
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Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors
Crystals, 2023 Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility of up to 300 cm2V−1s−1, which is considered a promising candidate for next-generation power devices.
Maolin Zhang +5 more
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A Comprehensive loss analysis of SiC-based DAB DC-DC converter for electric vehicle application [PDF]
E3S Web of Conferences, 2023 This paper presents loss analysis of SiC MOSFET based bidirectional DAB (Dual Active Bridge) DC-DC converter for EV application. This converter benefits the efficiency of the EV vehicle by reducing power loss and voltage drop across the converter.
Kalandar Kasim Resma, Robert Femi
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