Results 31 to 40 of about 225,573 (220)
Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET
Frontiers in Energy Research, 2023 The SiC MOSFET has lower conduction loss and switching loss than the Si IGBT, which helps to improve the efficiency and power density of the converter, especially for those having strict requirements for volume and weight, for example, electrical ...
Shangzhou Zhang, Shangzhou Zhang
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Energies, 2019 A SiC MOSFET is a suitable replacement for a Si MOSFET due to its lower on-state resistance, faster switching speed, and higher breakdown voltage. However, due to the parasitic parameters and the low damping in the circuit, the turn-on overcurrent and ...
Jiangui Chen, Yan Li, Mei Liang
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Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
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Représentation d'état pour un MOSFET SiC [PDF]
, 2018 International audienceThis paper proposes a State Space Model for a power a Silicon Carbide (SiC) MOSFET. The model uses the electrical EKV MOSFET structure. The model is developed for the SiC MOSFET CMD CREE (V, A) and uses the parameters extracted from
Boussak, M +4 more
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IEEE Access, 2019 The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter.
Qunfang Wu +5 more
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SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark [PDF]
, 2019 Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour.
Gutiérrez Mazón, roberto +11 more
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A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package
IEEE Open Journal of Power ElectronicsThe conventional TO-247-3 packages with single-sided cooling limit the thermal and electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided cooling press-pack (PP) packaging approach for the discrete SiC MOSFET device is ...
Ran Yao +7 more
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Energies, 2020 The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency,
Yingzhe Wu +3 more
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IEEE Journal of the Electron Devices Society, 2022 SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse ...
Dongyoung Kim +4 more
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Characterization and Modeling of BTI in SiC MOSFETs
ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019 SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hysteresis between two adjecent sweeps and the positive bias temperature instability, at different temperatures. The threshold hysteresis is a measure of the switching dynamics of the interface traps, while measurements at long stress times can reveal the ...
Cornigli D. +8 more
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