Results 31 to 40 of about 21,181 (269)
Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET
Frontiers in Energy Research, 2023 The SiC MOSFET has lower conduction loss and switching loss than the Si IGBT, which helps to improve the efficiency and power density of the converter, especially for those having strict requirements for volume and weight, for example, electrical ...
Shangzhou Zhang, Shangzhou Zhang
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Analysis of power converters with devices of SiC for applications in electric traction systems [PDF]
, 2016 This article presents the analysis of two topologies of power converters. Voltage Source Inverter (VSI) and Current Source Inverter (CSI) proposals for traction system applications, these topologies are implemented with silicon carbide devices.
Fernández Palomeque, Efrén Esteban +3 more
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Online Detection of SiC MOSFET Gate Oxide Degradation by Drain‐Source Voltage Surge in Inverter
IET Power Electronics, Volume 19, Issue 1, January/December 2026.The peak extraction circuit shown in Figure 7 converts the MOSFET's di/dt into a voltage, thereby characterising the health status of the MOSFET's gate oxide layer. ABSTRACT Gate oxide layer degradation has become one of the key issues in the reliability of SiC MOSFETs, which seriously restricts the broad application of SiC MOSFETs.
Tianyang Wang +5 more
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Energies, 2019 A SiC MOSFET is a suitable replacement for a Si MOSFET due to its lower on-state resistance, faster switching speed, and higher breakdown voltage. However, due to the parasitic parameters and the low damping in the circuit, the turn-on overcurrent and ...
Jiangui Chen, Yan Li, Mei Liang
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Experimental and analytical performance evaluation of SiC power devices in the matrix converter [PDF]
, 2014 With the commercial availability of SiC power devices, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices.
Castellazzi, Alberto +2 more
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A Fault-Tolerant T-Type Multilevel Inverter Topology With Increased Overload Capability and Soft-Switching Characteristics [PDF]
, 2017 he performance of a novel three-phase four-leg fault-tolerant T-type inverter topology is introduced in this paper. This inverter topology provides a fault-tolerant solution to any open-circuit and certain short-circuit switching faults in the power ...
Demerdash, Nabeel +4 more
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Novel Selection Criteria of Primary Side Transistors for LLC Resonant Converters [PDF]
, 2018 This work has been supported by the Spanish Government under Project MINECO-17-DPI2016-75760-R, Project DPI2014-56358-JIN and grant FPI BES-2014-070785, and by the Principality of Asturias under Project SV-PA-17-RIS3-4 and FEDER ...
Bauwens, Filip +5 more
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Study on Anti-surge Capacity of Body Diode of 1 200 V SiC MOSFET
机车电传动, 2021 The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment.
Chao CHEN +3 more
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Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
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Characterization and Modeling of BTI in SiC MOSFETs
ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019 SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hysteresis between two adjecent sweeps and the positive bias temperature instability, at different temperatures. The threshold hysteresis is a measure of the switching dynamics of the interface traps, while measurements at long stress times can reveal the ...
Cornigli D. +8 more
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