Results 31 to 40 of about 4,517 (219)
Energy capability of SiC MOSFETs [PDF]
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016 The superior electrical and thermal properties of silicon carbide (SiC) allow further shrinking of the active area of future power semiconductor devices. A lower boundary of the die size can be obtained from the thermal impedance required to withstand the high power dissipation during a short-circuit event.
Christian Unger, Martin Pfost
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Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET
Frontiers in Energy Research, 2023 The SiC MOSFET has lower conduction loss and switching loss than the Si IGBT, which helps to improve the efficiency and power density of the converter, especially for those having strict requirements for volume and weight, for example, electrical ...
Shangzhou Zhang, Shangzhou Zhang
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an analytical switching model of SiC MOSFET
, 2022 An analytical switching model of SiC MOSFET considering the junction temperature characteristics, built in ...
Wang,Yaqiang
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Energies, 2019 A SiC MOSFET is a suitable replacement for a Si MOSFET due to its lower on-state resistance, faster switching speed, and higher breakdown voltage. However, due to the parasitic parameters and the low damping in the circuit, the turn-on overcurrent and ...
Jiangui Chen, Yan Li, Mei Liang
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SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark [PDF]
, 2019 Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour.
Gutiérrez Mazón, roberto +11 more
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Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
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SiC-MOSFET Inverter in High-Performance PHEV Applications
, 2022 171180Improving the efficiency of the traction inverter and the electric machine is a key driver for the use of new technologies in the powertrain of electrified vehicles.
Barkow, Maximilian +4 more
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Characterization and Modeling of BTI in SiC MOSFETs
ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019 SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hysteresis between two adjecent sweeps and the positive bias temperature instability, at different temperatures. The threshold hysteresis is a measure of the switching dynamics of the interface traps, while measurements at long stress times can reveal the ...
Cornigli D. +8 more
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IEEE Access, 2019 The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter.
Qunfang Wu +5 more
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IEEE Journal of the Electron Devices Society, 2022 SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse ...
Dongyoung Kim +4 more
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