Results 41 to 50 of about 1,059 (165)

Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration.

PLoS ONE, 2023
Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions.
Hassan Khalid, Saad Mekhilef, Marif Daula Siddique, Addy Wahyudie, Mahrous Ahmed, Mehdi Seyedmahmoudian, Alex Stojcevski   +6 more
doaj   +1 more source

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

IEEE Open Journal of the Industrial Electronics Society, 2022
In this paper, the crosstalk-induced shoot-through current and induced gate voltage of SiC planar MOSFETs, SiC symmetrical double-trench MOSFETs and SiC asymmetrical double-trench MOSFETs is investigated on a half-bridge circuit to analyse the impact of ...
Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor   +6 more
doaj   +1 more source

An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier

IEEE Access
This study focuses on the SiC MOSFET with integrated Schottky contact super barrier rectifier (SiC SSBR-MOSFET) through the application of TCAD simulation methodologies.
Xintian Zhou, Jinglong Yan, Yun Tang, Dongqing Hu, Yu Wu, Yunpeng Jia, Bodian Li, Yuanfu Zhao   +7 more
doaj   +1 more source

Research on High-power Full SiC Converter

机车电传动, 2018
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing, ZHANG Xiaoyong, RAO Peinan, SHI Hongliang, ZHAO Mingrui, ZHOU Shuai   +5 more
doaj  

Approximate SPICE Modeling of SiC MOSFETs

IEEE Transactions on Power Electronics
The recent adaptation of wide bandgap (WBG) semiconductors pushes the SPICE circuit simulation software to the very edge, requiring computationally light and accurate assessment of rapid and oscillatory transients. One of the main limitations in SPICE modeling of WBG semiconductors is the lack of built-in models in the available software, forcing usage
Pawel Piotr Kubulus, Janus Dybdahl Meinert, Szymon Beczkowski, Asger Bjørn Jørgensen, Stig Munk-Nielsen, Dimosthenis Peftitsis   +5 more
openaire   +3 more sources

Comparing SiC MOSFET, IGBT and Si MOSFET in LV distribution inverters [PDF]

IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society, 2015
Efficency, power quality and EMI are three crucial performance drivers in LVDC applications such as electrical supply, EV charging or DC aerospace. Recent developments in SiC MOSFETs and MMC for LVDC promise two significant improvements in LVDC inverter performance.
Roscoe, N.M., Zhong, Y., Finney, S.J.
openaire   +3 more sources

Performance Evaluation of Si/SiC Hybrid Switch-Based Three-Level Active Neutral-Point-Clamped Inverter

IEEE Open Journal of Industry Applications, 2022
In this paper, two types of Silicon (Si) IGBT and Silicon Carbide (SiC) hybrid switch (Si/SiC HyS) based three-level active neutral-point-clamped (3L-ANPC) inverter are proposed for high efficiency and low device cost.
Haichen Liu, Tiefu Zhao, Xuezhi Wu
doaj   +1 more source

An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike

Energy Reports, 2022
In order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, the switching mode that turn off the Si IGBT prior to the SiC MOSFET is generally adopted to achieved the zero-voltage switching operation of IGBT.
Haihong Qin, Sixuan Xie, Qian Xun, Fanghua Zhang, Zhenxiang Xu, Lingyan Wang   +5 more
doaj   +1 more source

Smart SiC MOSFET accelerated lifetime testing [PDF]

Microelectronics Reliability, 2018
Abstract Accelerated lifetime testing of power modules is time consuming and expensive due to the destructive nature of these tests. Therefore, it makes sense to extract as much data as possible from each consumed component. Traditional power cycling methods, however, monitor a single parameter and stop the test after this parameter reaches a ...
Nick Baker, Francesco Iannuzzo
openaire   +1 more source

Research on Junction Temperature Smooth Control of SiC MOSFET Based on Body Diode Conduction Loss Adjustment

Energies
In a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature.
Junke Wu, Yunpeng Wei, Yuntao Wu, Zhou Wang, Xingyu Li, Xiangnan Wei   +5 more
doaj   +1 more source