Results 41 to 50 of about 4,517 (219)
Energies, 2020 The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency,
Yingzhe Wu +3 more
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TCAD model calibration for the SiC/SiO2interface trap distribution of a planar SiC MOSFET
, 2020 Silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFETs) are gradually replacing silicon power devices in many applications because of the higher performances of the material.
Matacena I. +5 more
core +1 more source
Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design
IET Power Electronics, 2022 With the rapid development of wide‐band gap semiconductor chip and package technologies, the voltage class of commercial silicon carbide (SiC) device is gradually improved.
Rongjun Ding +4 more
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High Frequency Multipurpose SiC MOSFET Driver
Advances in Electrical and Electronic Engineering, 2021 This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of power converters.
Strossa, Jan +4 more
openaire +3 more sources
EcoEnergy, EarlyView.As maritime transport electrifies, bidirectional charging (V2G) offers a dual‐purpose solution for energy resilience and economic viability. This work identifies key technological advancements and lifecycle challenges utilizing practical case studies to demonstrate how V2G systems can drive decarbonization and grid stability in the marine sector ...
Jonathan Bloor +3 more
wiley +1 more source
Review and Prospect of Short-circuit Failure and Degradation Mechanism of SiC MOSFET
, 2021 SiC MOSFET can greatly improve the efficiency and power density of the converter, and has good application prospects in high frequency, high temperature and high voltage field.
Kang, Jianlong +4 more
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Exploding Bridgewire (EBW) Detonators: An Example of Synergistic Multiphysics
Propellants, Explosives, Pyrotechnics, EarlyView.ABSTRACT Exploding bridgewire (EBW) detonators are highly temporally reproducible explosive devices that require the rapid discharge of a high‐voltage capacitance to operate and so are immune to most of the accidental hazards associated with traditional electric detonators.
P. J. Rae +3 more
wiley +1 more source
A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
Energies, 2021 A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
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Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan +3 more
wiley +1 more source
Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET
机车电传动, 2020 SiC materials have excellent properties such as large forbidden band width, high critical electric field, high carrier saturation drift speed and high thermal conductivity, making them widely used in high temperature, high voltage, high power and other ...
Liang ZENG +5 more
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