Results 41 to 50 of about 225,573 (220)
an analytical switching model of SiC MOSFET
, 2022 An analytical switching model of SiC MOSFET considering the junction temperature characteristics, built in ...
Wang,Yaqiang
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Simulation of SiC MOSFET Power Converters [PDF]
, 2017 This thesis discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter).
Albadri, Mustafa Nameer
core +1 more source
Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design
IET Power Electronics, 2022 With the rapid development of wide‐band gap semiconductor chip and package technologies, the voltage class of commercial silicon carbide (SiC) device is gradually improved.
Rongjun Ding +4 more
doaj +1 more source
A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
Energies, 2021 A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
doaj +1 more source
Gate‐Induced Critical Current Modulation in W–C Nanowires: The Role of Fabrication
Advanced Materials Technologies, EarlyView.Focused ion beam induced deposition (FIBID) enables precise control of superconducting W–C nanowire devices. Introducing a Ga+ focused ion beam (FIB) cleaning step reduces substrate damage and suppresses leakage currents, shifting gating thresholds to higher voltages.
Alba Arroyo‐Fructuoso +2 more
wiley +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
PLoS ONE, 2023 Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions.
Hassan Khalid +6 more
doaj +1 more source
Journal of Telecommunications and Information Technology, 2007 The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size ...
Mietek Bakowski +5 more
openaire +2 more sources
Advanced Electronic Materials, EarlyView.This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte +9 more
wiley +1 more source
Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET
机车电传动, 2020 SiC materials have excellent properties such as large forbidden band width, high critical electric field, high carrier saturation drift speed and high thermal conductivity, making them widely used in high temperature, high voltage, high power and other ...
Liang ZENG +5 more
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