Results 41 to 50 of about 21,181 (269)
Application of SiC MOSFETs in Industrial Power Supplies [PDF]
, 2020 Záměr této diplomové práce je analýza, simulace, porovnání a diskuze aplikace tranzistorů MOSFET na bázi karbidu křemíku v průmyslových zdrojích. Pozornost je věnována řízení SiC MOSFETů standartními kontroléry.
David Kudelásek
core
Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors [PDF]
, 2018 Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MOSFET
Corfield, Martin +8 more
core +3 more sources
A Double-Sided Cooling Approach of Discrete SiC MOSFET Device Based on Press-Pack Package
IEEE Open Journal of Power ElectronicsThe conventional TO-247-3 packages with single-sided cooling limit the thermal and electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided cooling press-pack (PP) packaging approach for the discrete SiC MOSFET device is ...
Ran Yao +7 more
doaj +1 more source
A review on research development of SiC trench gate MOSFET technology
机车电传动, 2023 The third-generation wide-bandgap semiconductor silicon carbide (SiC) MOSFET devices have rapidly become a research hotspot in the production and research sectors due to their advantages, such as high voltage resistance, high-temperature resistance and ...
LUO Haihui +3 more
doaj
IEEE Journal of the Electron Devices Society, 2022 SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse ...
Dongyoung Kim +4 more
doaj +1 more source
The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs [PDF]
, 2015 Silicon carbide Schottky barrier diodes (SiC-SBDs) are prone to electromagnetic oscillations in the output characteristics. The oscillation frequency, peak voltage overshoot, and damping are shown to depend on the ambient temperature and the metal-oxide-
Alatise, Olayiwola M. +4 more
core +4 more sources
Power-Law Time Exponent <i>n</i> and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction-Diffusion Theory. [PDF]
Micromachines (Basel)Dhyani M +3 more
europepmc +3 more sources
IEEE Access, 2019 The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter.
Qunfang Wu +5 more
doaj +1 more source
Energies, 2020 The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency,
Yingzhe Wu +3 more
doaj +1 more source
Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO$_2$ interface [PDF]
, 2017 SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of the devices ...
D. Peters +8 more
core +2 more sources