Results 61 to 70 of about 4,517 (219)

Smart SiC MOSFET accelerated lifetime testing [PDF]

Microelectronics Reliability, 2018
Abstract Accelerated lifetime testing of power modules is time consuming and expensive due to the destructive nature of these tests. Therefore, it makes sense to extract as much data as possible from each consumed component. Traditional power cycling methods, however, monitor a single parameter and stop the test after this parameter reaches a ...
Nick Baker, Francesco Iannuzzo
openaire   +1 more source

Toward 4R Electronics: Liquid‐Metal‐Enabled Thin Film, and Field‐Effect Transistors for Sustainability and E‐Waste Reduction

Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley   +1 more source

Performance Evaluation of Si/SiC Hybrid Switch-Based Three-Level Active Neutral-Point-Clamped Inverter

IEEE Open Journal of Industry Applications, 2022
In this paper, two types of Silicon (Si) IGBT and Silicon Carbide (SiC) hybrid switch (Si/SiC HyS) based three-level active neutral-point-clamped (3L-ANPC) inverter are proposed for high efficiency and low device cost.
Haichen Liu, Tiefu Zhao, Xuezhi Wu
doaj   +1 more source

Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga2O3 MOSFETs

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee, Sheng‐Ti Chung, Siddharth Rana, Chien‐Nan Hsiao, Tejender Singh Rawat, Yi‐Kai Hsiao, Hao‐Chung Kuo, Ray‐Hua Horng   +7 more
wiley   +1 more source

Impedance-Oriented Transient Instability Modeling of SiC MOSFET Intruded by Measurement Probes [PDF]

, 2019
Due to the breakneck switching speed, SiC MOSFET is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC MOSFET ...
Zhang, Xin, Blaabjerg, Frede, Zeng, Zheng, Blaabjerg, F.; id_orcid, Zhang, X., Miao, L., Miao, Linjing   +6 more
core   +1 more source

An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike

Energy Reports, 2022
In order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, the switching mode that turn off the Si IGBT prior to the SiC MOSFET is generally adopted to achieved the zero-voltage switching operation of IGBT.
Haihong Qin, Sixuan Xie, Qian Xun, Fanghua Zhang, Zhenxiang Xu, Lingyan Wang   +5 more
doaj   +1 more source

Beyond Conventional Cooling: Advanced Micro/Nanostructures for Managing Extreme Heat Flux

Advanced Materials, Volume 38, Issue 5, 22 January 2026.
This review examines the design, application, and manufacturing of biomimetic or engineered micro/nanostructures for managing high heat‐flux in multi‐level electronics by enhancing conductive, convective, phase‐changing, and radiative heat transfer mechanisms, highlighting their potential for efficient, targeted thermal management, and future prospects.
Yuankun Zhang, Huajie Li, Yuhang Zhou, Jun Ma, Keng‐Te Lin, Han Lin, Chunsheng Guo, Baohua Jia   +7 more
wiley   +1 more source

The Experience with SiC MOSFET and Buck Converter Snubber Design

, 2014
The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch.
Petr Vaculik
core   +1 more source

An Active, Multimodal Neural Interface for Real‐Time Monitoring of Cortical Electrical, Thermal, and Optical Dynamics

Advanced Science, Volume 13, Issue 3, 14 January 2026.
A chronically implantable neural interface enables real‐time multimodal monitoring of electrical, thermal, and photodynamic activities. Incorporating silicon‐based transistor arrays with a functional multiplexing strategy and resistive sensors, the device delivers high‐fidelity recordings with long‐term stability and biocompatibility.
Jiahao Li, Yifei Lu, Zhongzheng Li, Lu Jin, Lianjie Zhou, Ke Ding, Junhan Liu, Bofan Hu, Pengchuan Liu, Dongqi An, Fuying Liang, Yuhang Hu, Yuting Shao, Yifan Ding, Lichao Ma, Rui Li, Yongfeng Mei, Rongjun Zhang, Enming Song   +18 more
wiley   +1 more source

Merjenje in modeliranje močnostnih SiC MOSFET tranzistorjev

, 2021
The increasing demand for smaller, faster, and more efficient switch mode power supplies (SMPS) and energy converters has led to the development of new power MOSFET technologies, such as SiC (silicon carbide) power MOSFET transistors.
Molnar, Darjan
core