Results 61 to 70 of about 225,573 (220)
Comparing SiC MOSFET, IGBT and Si MOSFET in LV distribution inverters [PDF]
IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society, 2015 Efficency, power quality and EMI are three crucial performance drivers in LVDC applications such as electrical supply, EV charging or DC aerospace. Recent developments in SiC MOSFETs and MMC for LVDC promise two significant improvements in LVDC inverter performance.
Roscoe, N.M., Zhong, Y., Finney, S.J.
openaire +3 more sources
Exploding Bridgewire (EBW) Detonators: An Example of Synergistic Multiphysics
Propellants, Explosives, Pyrotechnics, Volume 51, Issue 9, Page 1538-1545, September 2026.ABSTRACT Exploding bridgewire (EBW) detonators are highly temporally reproducible explosive devices that require the rapid discharge of a high‐voltage capacitance to operate and so are immune to most of the accidental hazards associated with traditional electric detonators.
P. J. Rae +3 more
wiley +1 more source
SiC-MOSFET Inverter in High-Performance PHEV Applications
, 2022 171180Improving the efficiency of the traction inverter and the electric machine is a key driver for the use of new technologies in the powertrain of electrified vehicles.
Barkow, Maximilian +4 more
core +1 more source
Avalanche ruggedness of parallel SiC power MOSFETs [PDF]
Microelectronics Reliability, 2018 The aim of this paper is to investigate the impact of electro-thermal device parameter spread on the avalanche ruggedness of parallel silicon carbide (SiC) power MOSFETs representative of multi-chip layout within an integrated power module. The tests were conducted on second generation 1200 V, 36 A-80 mΩ rated devices.
Asad Fayyaz +4 more
openaire +2 more sources
EcoEnergy, Volume 4, Issue 4, August 2026.As maritime transport electrifies, bidirectional charging (V2G) offers a dual‐purpose solution for energy resilience and economic viability. This work identifies key technological advancements and lifecycle challenges utilizing practical case studies to demonstrate how V2G systems can drive decarbonization and grid stability in the marine sector ...
Jonathan Bloor +3 more
wiley +1 more source
, 2001 A vertical power MOSFET’s whose n-drift region is stacked by alternate pn structure named as MULTILAYER POWER MOSFET has been proposed for high voltage application with extremely low on-resistance.
Hakim, M.M.A., Alam, A.H.M. Zahirul
core +1 more source
The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian +6 more
wiley +1 more source
Merjenje in modeliranje močnostnih SiC MOSFET tranzistorjev [PDF]
, 2021 The increasing demand for smaller, faster, and more efficient switch mode power supplies (SMPS) and energy converters has led to the development of new power MOSFET technologies, such as SiC (silicon carbide) power MOSFET transistors.
Molnar, Darjan
core
Advanced Functional Materials, Volume 36, Issue 58, 20 July 2026.Rutile GeO2${\rm GeO}_{2}$ exhibits orientation‐dependent heat transport with temperature‐dependent anisotropy, showing higher cross‐plane thermal conductivity along [001] than along the equivalent in‐plane [100] and [010] directions. Temperature‐dependent TDTR measurements and first‐principles phonon calculations identify the microscopic phonon ...
Pouria Emtenani +9 more
wiley +1 more source
Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan +3 more
wiley +1 more source