Results 61 to 70 of about 21,181 (269)

A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region

Energies, 2021
A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
doaj   +1 more source

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions [PDF]

, 2016
SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when ...
Evans, Paul, Johnson, Christopher Mark, Li, Ke   +2 more
core  

A comprehensive analysis of SVPWM for a Five-phase VSI based on SiC devices applied to motor drives [PDF]

, 2019
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new ...
Acosta Cambranis, Fernando Geovany, Romeral Martínez, José Luis, Zaragoza Bertomeu, Jordi   +2 more
core   +1 more source

Approximate SPICE Modeling of SiC MOSFETs

IEEE Transactions on Power Electronics
The recent adaptation of wide bandgap (WBG) semiconductors pushes the SPICE circuit simulation software to the very edge, requiring computationally light and accurate assessment of rapid and oscillatory transients. One of the main limitations in SPICE modeling of WBG semiconductors is the lack of built-in models in the available software, forcing usage
Pawel Piotr Kubulus, Janus Dybdahl Meinert, Szymon Beczkowski, Asger Bjørn Jørgensen, Stig Munk-Nielsen, Dimosthenis Peftitsis   +5 more
openaire   +3 more sources

A Low‐Cost and Compact High‐Frequency Gallium Nitride Gradient Power Amplifier for Low‐Field MRI

Magnetic Resonance in Medicine, Volume 95, Issue 5, Page 2992-2999, May 2026.
ABSTRACT Purpose To reduce the upfront cost of small, low‐field MRI systems, while expanding the capabilities of their gradient systems. Methods A gradient power amplifier was designed to leverage the lowering cost of Gallium Nitride (GaN) power transistors and high speed logic, to achieve high efficiency and responsiveness for driving gradient coils ...
N. Reid Bolding, Jacob Hannan, Christopher Vaughn, Aria Patel, Snow Lin, Jessie E. P. Sun, William Grissom, Mark A. Griswold   +7 more
wiley   +1 more source

An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier

IEEE Access
This study focuses on the SiC MOSFET with integrated Schottky contact super barrier rectifier (SiC SSBR-MOSFET) through the application of TCAD simulation methodologies.
Xintian Zhou, Jinglong Yan, Yun Tang, Dongqing Hu, Yu Wu, Yunpeng Jia, Bodian Li, Yuanfu Zhao   +7 more
doaj   +1 more source

Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration.

PLoS ONE, 2023
Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions.
Hassan Khalid, Saad Mekhilef, Marif Daula Siddique, Addy Wahyudie, Mahrous Ahmed, Mehdi Seyedmahmoudian, Alex Stojcevski   +6 more
doaj   +1 more source

Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga2O3 MOSFETs

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee, Sheng‐Ti Chung, Siddharth Rana, Chien‐Nan Hsiao, Tejender Singh Rawat, Yi‐Kai Hsiao, Hao‐Chung Kuo, Ray‐Hua Horng   +7 more
wiley   +1 more source

Comparison of two PWM schemes for SiC-device-based split output converters in high-switching-frequency applications [PDF]

, 2016
The adoption of the fast-switching silicon carbide (SiC) devices in the conventional two-level voltage source converters can bring issues such as crosstalk effect, high turnon losses, electromagnetic interference (EMI), etc.
Yan, Qingzeng, Yuan, Xibo
core   +2 more sources

Beyond Conventional Cooling: Advanced Micro/Nanostructures for Managing Extreme Heat Flux

Advanced Materials, Volume 38, Issue 5, 22 January 2026.
This review examines the design, application, and manufacturing of biomimetic or engineered micro/nanostructures for managing high heat‐flux in multi‐level electronics by enhancing conductive, convective, phase‐changing, and radiative heat transfer mechanisms, highlighting their potential for efficient, targeted thermal management, and future prospects.
Yuankun Zhang, Huajie Li, Yuhang Zhou, Jun Ma, Keng‐Te Lin, Han Lin, Chunsheng Guo, Baohua Jia   +7 more
wiley   +1 more source