Results 61 to 70 of about 1,059 (165)

Temperature Characteristics and Junction Temperature Estimation Methods for SiC MOSFET and Si IGBT

Kongzhi Yu Xinxi Jishu, 2016
The output characteristic test circuit, leakage current test circuit and double pulse test circuit were set up to study the effect of temperature characteristics of 1 200 V SiC MOSFET and 1 200 V Si IGBT on output characteristic, leakage current, switch ...
NING Puqi, LI Lei, WEN Xuhui, ZHANG Dong
doaj  

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance. [PDF]

Micromachines (Basel), 2023
Wu L, Zhang M, Liang J, Liu M, Zhang T, Yang G.   +5 more
europepmc   +1 more source

Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress. [PDF]

Micromachines (Basel), 2023
Qin H, Ba Z, Xie S, Zhang Z, Chen W, Xun Q.   +5 more
europepmc   +1 more source

Examining the impacts of DM filters to PFC isolated Ćuk converter for DCM operation by comparing Si and SiC MOSFET. [PDF]

Sci Rep, 2023
Şehirli E.
europepmc   +1 more source

Behavioral Modeling of SiC MOSFET Static and Dynamic Characteristics Based on Particle Swarm Optimization Algorithm

IEEE Access
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied in electronic equipment, owing to the rapidly switching speed and superior thermal performance.
Zhibo Zhu, Yang Zhao, Wei Yan
doaj   +1 more source

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy. [PDF]

Nanomaterials (Basel), 2021
Fiorenza P, Alessandrino MS, Carbone B, Russo A, Roccaforte F, Giannazzo F.   +5 more
europepmc   +1 more source

Research on the Techniques of High Power SiC-MOSFET Driver

机车电传动, 2018
In order to adapt to the characteristics of SiC-MOSFET, such as faster switching speed, lower loss but lower threshold voltage and weaker short-circuit capacity compared to Si-IGBT, the key techniques of SiC-MOSFET driver was analyzed, including drain ...
ZHOU Shuai, ZHANG Xiaoyong, RAO Peinan, ZHANG Qing, SHI Hongliang   +4 more
doaj  

Experimental Investigation of SiC MOSFET-Based Isolated Dual Active Half-Bridge Converter: Hard-Switching Versus Soft-Switching

Electrica
: This article presents the performance evaluation of an isolated dual active half-bridge (DAHB) converter with discrete SiC MOSFET devices. The impact of a resonant network on the SiC MOSFET DAHB under two different modes is investigated.
Veera Venkata Subrahmanya Kumar Bhajana, Pravat Biswal, Pavel Drabek, Vijay Kakani   +3 more
doaj   +1 more source

Thermal Management and Experimental Validation of a Copper-Inlay PCB for SiC MOSFETs in High-Power EV Fast Chargers

IEEE Open Journal of Power Electronics
Efficient thermal management is essential to ensure reliability and performance in high-power electric vehicle (EV) fast-charging converters employing silicon carbide (SiC) MOSFETs.
Muhammad Awais, Saghir Amin, Francisco P. Brito, Nuno Costa, Joao L. Afonso, Vitor Monteiro   +5 more
doaj   +1 more source

Impact of gamma-ray irradiation on commercial silicon carbide MOSFET with boost converter application

Power Electronic Devices and Components
This paper study impact of gamma-ray irradiation on the characteristics of silicon carbide power metal oxide semiconductor field effect transistor (SiC MOSFET) from CREE, Inc., and its corresponding effects on the operation of 5/12 V DC-DC boost ...
S. M. Abd El-Azeem, W. Abd El-Basit
doaj   +1 more source