Results 71 to 80 of about 225,573 (220)

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs [PDF]

Materials Science Forum, 2017
Two commercial 1.2 kV SiC MOSFETs have been extensively characterised from 30 to 320 K. The temperature dependence of their I/V characteristics, threshold voltage, and breakdown voltage has been examined and are presented in this paper. Overall, the measured characteristics of both devices demonstrate very similar temperature dependencies and it is ...
Lee J. Woodend, Peter Michael Gammon, Vishal A. Shah, Amador Pérez-Tomás, Fan Li, Dean P. Hamilton, Maksym Myronov, Philip Andrew Mawby   +7 more
openaire   +1 more source

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

Performance comparison of Si, SiC and GaN based power MOSFET/HEMT using DC-DC boost converter

There is a rising demand for power MOSFET semiconductors with low power consumption and high energy efficiency. Wide band-gap semiconductor materials Gallium nitride (GaN) and Silicon Carbide (SiC) achieve the need of low power consumption and high ...
Pande, P, Joshi, V, Chaturvedi, M, Jadli, U, Nautiyal, P, Bisht, C   +5 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Research on Junction Temperature Smooth Control of SiC MOSFET Based on Body Diode Conduction Loss Adjustment

Energies
In a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature.
Junke Wu, Yunpeng Wei, Yuntao Wu, Zhou Wang, Xingyu Li, Xiangnan Wei   +5 more
doaj   +1 more source

Detection of Toxic Gases and Volatile Organic Compounds Using Highly Adsorptive Nanomaterials: A Comprehensive Assessment

EcoMat, Volume 8, Issue 5, May 2026.
This review highlights how nanomaterials with high adsorption capacities including carbon‐based structures, transition metal oxides, 2D layers, and zeolites enable sensitive and selective detection of toxic gases and VOCs. Their tailored properties and sensing mechanisms drive the development of next‐generation gas sensors for environmental and ...
Hamdy A. Ismail, Sabbah Ataya, Mohamed M. Goda, Ahmed G. Hussein, Ahmed Ramah, Ahmad G. Ramadan, Rashid Khan, Joy Djuansjah, Swellam W. Sharshir, Ahmed El‐Harairy   +9 more
wiley   +1 more source

Advanced control of SiC MOSFET converter [PDF]

, 2019
V magistrskem delu je predstavljen razvoj trifaznega razsmernika, ki temelji na SiC tehnologiji. Namesto klasičnih silicijevih MOSFET tranzistorjev so uporabljeni tranzistorji iz silicijevega karbida, ki se zaradi svojih prednostih, v zadnjih letih vedno
PUŠNIK, BOŠTJAN
core  

Fault Tolerant Operation of ISOP Multicell Dc-Dc Converter Using Active Gate Controlled SiC Protection Switch

Journal of Engineering, 2016
An active gate controlled semiconductor protection switch using SiC-MOSFET is proposed to achieve the fault tolerant operation of ISOP (Input Series and Output Parallel) connected multicell dc-dc converter. The SiC-MOSFET with high temperature capability
Yusuke Hayashi, Yoshikatsu Matsugaki, Tamotsu Ninomiya   +2 more
doaj   +1 more source

A Low‐Cost and Compact High‐Frequency Gallium Nitride Gradient Power Amplifier for Low‐Field MRI

Magnetic Resonance in Medicine, Volume 95, Issue 5, Page 2992-2999, May 2026.
ABSTRACT Purpose To reduce the upfront cost of small, low‐field MRI systems, while expanding the capabilities of their gradient systems. Methods A gradient power amplifier was designed to leverage the lowering cost of Gallium Nitride (GaN) power transistors and high speed logic, to achieve high efficiency and responsiveness for driving gradient coils ...
N. Reid Bolding, Jacob Hannan, Christopher Vaughn, Aria Patel, Snow Lin, Jessie E. P. Sun, William Grissom, Mark A. Griswold   +7 more
wiley   +1 more source

Impact of Short-circuit events on Lifetime Expectancy of SiC MOSFETs [PDF]

openThe Silicon Carbide (SiC) is a "new" material that offers very high performance, but the lifetime of components (in this case SiC MOSFET) are not sufficient and is shorter than the Silicon (Si) counterparts.
MARTELLO, GIOVANNI
core