Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module. [PDF]
Micromachines (Basel), 2020 Kim MK, Yoon SW.
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Design of a SiC MOSFET Gate Driver Chip Based on Adaptive Active Drive Technology. [PDF]
Micromachines (Basel)Li Q +8 more
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Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. [PDF]
Nanomaterials (Basel)Yu M, Shen Y, Ma H, Zhang Q.
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Characteristics of a 1200 V Hybrid Power Switch Comprising a Si IGBT and a SiC MOSFET. [PDF]
Micromachines (Basel)Sheikhan A, Narayanan EMS.
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SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network. [PDF]
Micromachines (Basel)Niu X +10 more
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1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]
Micromachines (Basel)Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
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A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub>. [PDF]
Micromachines (Basel)Cui W, Guo J, Xu H, Zhang DW.
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Research on Single-Event Burnout Reinforcement Structure of SiC MOSFET. [PDF]
Micromachines (Basel)Liao Q, Liu H.
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4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses. [PDF]
Materials (Basel)Anoldo L +5 more
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Contribution to the study of the SiC MOSFETs gate oxide
Contribution à l'étude de la robustesse de l'oxyde de grille des MOSFET en SiC Les MOSFET en SiC sont appelées à remplacer les IGBT en Silicium pour des applications de demandant une plus forte vitesse de commutation. Cependant, les MOSFET en SiC ont encore quelques problèmes de fiabilité, tels que la robustesse de la diode interne ou ...
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