Results 71 to 80 of about 4,517 (219)

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs [PDF]

Materials Science Forum, 2017
Two commercial 1.2 kV SiC MOSFETs have been extensively characterised from 30 to 320 K. The temperature dependence of their I/V characteristics, threshold voltage, and breakdown voltage has been examined and are presented in this paper. Overall, the measured characteristics of both devices demonstrate very similar temperature dependencies and it is ...
Lee J. Woodend, Peter Michael Gammon, Vishal A. Shah, Amador Pérez-Tomás, Fan Li, Dean P. Hamilton, Maksym Myronov, Philip Andrew Mawby   +7 more
openaire   +1 more source

Bulk Rutile‐GeO2 Single Crystals and Epi‐Ready Wafers

Crystal Research and Technology, Volume 61, Issue 1, January 2026.
Undoped and Sb‐doped bulk rutile‐GeO2 single crystals up to 18 mm in diameter are grown by the Top Seeded Solution Growth. Inclusion‐free and transparent crystals enable to preparation of epi‐ready wafers with different orientations and sizes up to 10 mm.
Zbigniew Galazka, Saud Bin Anooz, Steffen Ganschow, Albert Kwasniewski, Uta Juda, Manuela Imming‐Friedland, Thomas Wurche, Andreas Fiedler, Thomas Schroeder, Matthias Bickermann   +9 more
wiley   +1 more source

PERANCANGAN GATE DRIVER UNTUK SIC MOSFET

, 2021
ABSTRAKPengendalian komponen elektronika daya diperlukannya driver pada gate sehingga diperlukannya perancangan gate driver bertujuan untuk memperkuat sinyal transmisi yang berasal dari control stage untuk memastikan switching yang sesuai dari power ...
Pradipta, Doni, Hasanah, Rini Nur, Djuriatno, Waru   +2 more
core  

Research on Junction Temperature Smooth Control of SiC MOSFET Based on Body Diode Conduction Loss Adjustment

Energies
In a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature.
Junke Wu, Yunpeng Wei, Yuntao Wu, Zhou Wang, Xingyu Li, Xiangnan Wei   +5 more
doaj   +1 more source

Development of 3C-SiC MOSFETs

Journal of Telecommunications and Information Technology, 2007
The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size ...
Mietek Bakowski, Adolf Schöner, Per Ericsson, Helena Strömberg, Hiroyuki Nagasawa, Masayuki Abe   +5 more
openaire   +2 more sources

A Five‐Level Active Neutral‐Point‐Clamped Auxiliary Inverter Based on Reverse Blocking IGBT in Metro Applications

IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.
We propose a novel five‐level active‐neutral‐point‐clamped converter utilising reverse blocking IGBT (RB‐IGBT). The inverter configuration significantly reduces conduction losses, as only two switches are on the current paths in some switching states. We also propose an optimised state machine‐based modulation strategy.
Mingxia Xu, Bowen Yu, Yingying Xu, Rui Li, Jiatao Yang   +4 more
wiley   +1 more source

Performance comparison of Si, SiC and GaN based power MOSFET/HEMT using DC-DC boost converter

There is a rising demand for power MOSFET semiconductors with low power consumption and high energy efficiency. Wide band-gap semiconductor materials Gallium nitride (GaN) and Silicon Carbide (SiC) achieve the need of low power consumption and high ...
Pande, P, Joshi, V, Chaturvedi, M, Jadli, U, Nautiyal, P, Bisht, C   +5 more
core   +1 more source

Experiment Result of High Frequency Switching SiC Mosfet Gate Driver

, 2022
DC-DC converter battery charger application commonly applied a high-frequency switching method. The high-frequency technique aims for a smaller size transformer size and weight. Overall, the chosen strategy leads to more economical end-product.
Kurniawan, Agta Wijaya, Wijaya, F. Danang, Firmansyah, Eka   +2 more
core  

SiC Power MOSFET with Improved Gate Dielectric [PDF]

, 2010
In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices.
Sbrockey, Nick M, Spencer, Michael G, Chandrashekhar, Chandra MVS, Tompa, Gary S   +3 more
core   +1 more source

Natural Soft‐Switching Extended Phase‐Shift Control of Dual Active Bridge for High‐Efficiency Battery Charging and Discharging

IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.
This paper adopts a Neutral‐Point‐Clamped H‐bridge (NPC‐H) DAB topology to mitigate voltage stress on the input‐side switches. For both charging and discharging scenarios, a direct current control method is proposed using the output current as the primary control variable.
Yunxiang Jiang, Yihui Xia, Qingxin Guan, Jingru Zhang   +3 more
wiley   +1 more source