Results 71 to 80 of about 21,181 (269)
Research on High-power Full SiC Converter
机车电传动, 2018 In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing +5 more
doaj
IEEE Open Journal of Industry Applications, 2022 In this paper, two types of Silicon (Si) IGBT and Silicon Carbide (SiC) hybrid switch (Si/SiC HyS) based three-level active neutral-point-clamped (3L-ANPC) inverter are proposed for high efficiency and low device cost.
Haichen Liu, Tiefu Zhao, Xuezhi Wu
doaj +1 more source
Advanced Science, Volume 13, Issue 3, 14 January 2026.A chronically implantable neural interface enables real‐time multimodal monitoring of electrical, thermal, and photodynamic activities. Incorporating silicon‐based transistor arrays with a functional multiplexing strategy and resistive sensors, the device delivers high‐fidelity recordings with long‐term stability and biocompatibility.
Jiahao Li +18 more
wiley +1 more source
IEEE Open Journal of the Industrial Electronics Society, 2022 In this paper, the crosstalk-induced shoot-through current and induced gate voltage of SiC planar MOSFETs, SiC symmetrical double-trench MOSFETs and SiC asymmetrical double-trench MOSFETs is investigated on a half-bridge circuit to analyse the impact of ...
Juefei Yang +6 more
doaj +1 more source
Smart SiC MOSFET accelerated lifetime testing [PDF]
Microelectronics Reliability, 2018 Abstract Accelerated lifetime testing of power modules is time consuming and expensive due to the destructive nature of these tests. Therefore, it makes sense to extract as much data as possible from each consumed component. Traditional power cycling methods, however, monitor a single parameter and stop the test after this parameter reaches a ...
Nick Baker, Francesco Iannuzzo
openaire +1 more source
Bulk Rutile‐GeO2 Single Crystals and Epi‐Ready Wafers
Crystal Research and Technology, Volume 61, Issue 1, January 2026.Undoped and Sb‐doped bulk rutile‐GeO2 single crystals up to 18 mm in diameter are grown by the Top Seeded Solution Growth. Inclusion‐free and transparent crystals enable to preparation of epi‐ready wafers with different orientations and sizes up to 10 mm.
Zbigniew Galazka +9 more
wiley +1 more source
An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike
Energy Reports, 2022 In order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, the switching mode that turn off the Si IGBT prior to the SiC MOSFET is generally adopted to achieved the zero-voltage switching operation of IGBT.
Haihong Qin +5 more
doaj +1 more source
Less-conventional low-consumption galvanic separated MOSFET-IGBT gate drive supply [PDF]
, 2017 A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it
Bikorimana, Jean Marie Vianney +1 more
core +3 more sources
IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.We propose a novel five‐level active‐neutral‐point‐clamped converter utilising reverse blocking IGBT (RB‐IGBT). The inverter configuration significantly reduces conduction losses, as only two switches are on the current paths in some switching states. We also propose an optimised state machine‐based modulation strategy.
Mingxia Xu +4 more
wiley +1 more source
IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.This paper adopts a Neutral‐Point‐Clamped H‐bridge (NPC‐H) DAB topology to mitigate voltage stress on the input‐side switches. For both charging and discharging scenarios, a direct current control method is proposed using the output current as the primary control variable.
Yunxiang Jiang +3 more
wiley +1 more source