Results 91 to 100 of about 225,573 (220)

Research on Single-Switch Wireless Power Transfer System Based on SiC MOSFET

IEEE Access, 2019
The traditional wireless power transfer circuit uses the full-bridge or half-bridge inverter, which has complex circuit and control and low reliability.
Houji Li, Chunfang Wang, Yunrui Liu, Rui Yue   +3 more
doaj   +1 more source

Técnica de Mosfet chaveado para filtros programáveis operando à baixa tensão de alimentação [PDF]

, 2002
Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.O mercado e a necessidade de se implementar equipamentos portáteis têm pressionado a indústria a produzir circuitos com ...
Marques, Luís Cléber Carneiro
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Impedance-Oriented Transient Instability Modeling of SiC MOSFET Intruded by Measurement Probes [PDF]

, 2019
Due to the breakneck switching speed, SiC MOSFET is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC MOSFET ...
Zhang, Xin, Blaabjerg, Frede, Zeng, Zheng, Blaabjerg, F.; id_orcid, Zhang, X., Miao, L., Miao, Linjing   +6 more
core   +1 more source

Temperature Characteristics and Junction Temperature Estimation Methods for SiC MOSFET and Si IGBT

Kongzhi Yu Xinxi Jishu, 2016
The output characteristic test circuit, leakage current test circuit and double pulse test circuit were set up to study the effect of temperature characteristics of 1 200 V SiC MOSFET and 1 200 V Si IGBT on output characteristic, leakage current, switch ...
NING Puqi, LI Lei, WEN Xuhui, ZHANG Dong
doaj  

Dynamic Voltage Balancing Across Series-Connected 10 kV SiC JBS Diodes in Medium Voltage 3L-NPC Power Converter Having Snubberless Series-Connected 10 kV SiC MOSFETs

IEEE Open Journal of the Industrial Electronics Society
This article addresses the mitigation of dynamic voltage imbalance in series-connected 10 kV silicon carbide (SiC) JBS diodes within a three-level NPC (3L-NPC) converter using active turn-off delay control across complementary series-connected 10 kV SiC ...
Sanket Parashar, Nithin Kolli, Raj Kumar Kokkonda, Ajit Kanale, Subhashish Bhattacharya, Bantval Jayant Baliga   +5 more
doaj   +1 more source

Blog de l'ADT-SIC

, 2013
Le carnet de l'ADT-SIC, l’Association des Doctorants Toulousains en Sciences de l’Information et de la Communication, vise à promouvoir une jeune association qui a pour objectif de mettre en réseau les doctorants en SIC à Toulouse (et dans la région), de
Bureau de l'Adt-SIC
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Experiment Result of High Frequency Switching SiC Mosfet Gate Driver

, 2022
DC-DC converter battery charger application commonly applied a high-frequency switching method. The high-frequency technique aims for a smaller size transformer size and weight. Overall, the chosen strategy leads to more economical end-product.
Kurniawan, Agta Wijaya, Wijaya, F. Danang, Firmansyah, Eka   +2 more
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SiC Power MOSFET with Improved Gate Dielectric [PDF]

, 2010
In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices.
Sbrockey, Nick M, Spencer, Michael G, Chandrashekhar, Chandra MVS, Tompa, Gary S   +3 more
core   +1 more source

Deuxième séance du SIC "Santé, exclusion, citoyenneté", Lille, 17 avril 2015

, 2015
Le vendredi 17 avril prochain aura lieu la deuxième séance du SIC. Elle se déroulera à l'Université de Lille 3 dans la salle de séminaire de l'IRHiS de 13h15 à 17h45. Le programme est disponible ici: Programme Séminaire SIC 17 avril 2015. Cette séance se
sic
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Research on High Efficient Resonant Full-bridge Converter with High Voltage SiC MOSFET

Kongzhi Yu Xinxi Jishu, 2016
With SiC MOSFET, resonant converter can achieve high frequency and high efficiency, thus increasing the power density with reducing total cost and simplify topology.
Jimmy Liu, John Mookken, Kin Lap
doaj