Results 91 to 100 of about 1,059 (165)

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source

Advances and Perspectives in Gate Dielectric Thin Films for 4H-SiC MOSFETs. [PDF]

Materials (Basel)
Bai Z, Liang J, Ding C, Zhou Z, Luo M, Gu L, Ma HP, Zhang QC.   +7 more
europepmc   +1 more source

A Junction Temperature Prediction Method Based on Multivariate Linear Regression Using Current Fall Characteristics of SiC MOSFETs. [PDF]

Sensors (Basel)
Qin H, Zhang Y, Zeng Y, Kang Y, Zhu Z, Wu F.   +5 more
europepmc   +1 more source

Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025. [PDF]

Materials (Basel)
Roccaforte F.
europepmc   +1 more source

Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC. [PDF]

Nat Commun
Shen Y, Qi X, Li Y, Guo Y, Huang Q, Dai W, Yuan Q, Gu L, Ding C, Chen WJ, Yang M, Jia Z, Lin CT, Jiang N, Sun F, Zhang QJ, Ma HP.   +16 more
europepmc   +1 more source

Evaluation of electric vehicle performance using driving cycle clustering based on motor-inverter losses and efficiency. [PDF]

Sci Rep
Abdelali K, Bendjedia B, Rizoug N, Kraiem H, Flah A.   +4 more
europepmc   +1 more source

Zero-Power consumption based evaporative cooling for rated current conduction in SiC mosfets. [PDF]

Sci Rep
Hong KB, Singh SK, Sung C, Hsiao YS, Hsiao YK, Chauhan YS, Kuo HC, Wu TL, Tu CC.   +8 more
europepmc   +1 more source

High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET. [PDF]

Sci Rep
Lodhi MEA, Loan SA, Ansari AQ, Urooj S, Napte K.   +4 more
europepmc   +1 more source

Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation. [PDF]

Sensors (Basel)
Bianchini C, Vogni M, Chini A, Franceschini G.   +3 more
europepmc   +1 more source

SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance. [PDF]

Micromachines (Basel)
Wang Z, Wang H, Zhou Y, Liu Q, Wu H, Shen J, Luo J, Hu S.   +7 more
europepmc   +1 more source