Results 91 to 100 of about 4,517 (219)
Research on Single-Switch Wireless Power Transfer System Based on SiC MOSFET
IEEE Access, 2019 The traditional wireless power transfer circuit uses the full-bridge or half-bridge inverter, which has complex circuit and control and low reliability.
Houji Li +3 more
doaj +1 more source
Simulation of SiC MOSFET Power Converters
, 2017 This thesis discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter).
Albadri, Mustafa Nameer
core
Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
, 2021 This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static ...
Shin-Yi Huang +4 more
core +1 more source
Advanced control of SiC MOSFET converter
, 2019 V magistrskem delu je predstavljen razvoj trifaznega razsmernika, ki temelji na SiC tehnologiji. Namesto klasičnih silicijevih MOSFET tranzistorjev so uporabljeni tranzistorji iz silicijevega karbida, ki se zaradi svojih prednostih, v zadnjih letih vedno
PUŠNIK, BOŠTJAN
core
Early fault detection in SiC-MOSFET with application in boost converter
Revista Facultad de Ingeniería Universidad de Antioquia, 2018 This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is
Leobardo Hernández-González +6 more
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, 2023 This paper explores some efforts to suppress the voltage surge appearing during the operation of a SiC-MOSFET-based half-bridge circuit in an inverter topology.
Ardhenta, Lunde +5 more
core +1 more source
IEEE Open Journal of the Industrial Electronics SocietyThis article addresses the mitigation of dynamic voltage imbalance in series-connected 10 kV silicon carbide (SiC) JBS diodes within a three-level NPC (3L-NPC) converter using active turn-off delay control across complementary series-connected 10 kV SiC ...
Sanket Parashar +5 more
doaj +1 more source
A Solution to Press-Pack Packaging of SiC MOSFETS
IEEE Transactions on Industrial Electronics, 2017 This paper proposes a packaging method for SiC MOSFETs that provides a feasible solution of implementing press-pack packaging on SiC MOSFETs to extend the application of SiC devices into the high power range. The challenges in realizing press-pack packaging of SiC MOSFETs are addressed, and the solutions are proposed that fit the specific requirements ...
Nan Zhu +4 more
openaire +1 more source
, 2018 The introduction of Silicon Carbide (SiC) MOSFET based inverters into the traction drive makes it possible to increase the inverter switching frequency and reduce energy consumption.
Dahlquist, Erik, +4 more
core
Research on High Efficient Resonant Full-bridge Converter with High Voltage SiC MOSFET
Kongzhi Yu Xinxi Jishu, 2016 With SiC MOSFET, resonant converter can achieve high frequency and high efficiency, thus increasing the power density with reducing total cost and simplify topology.
Jimmy Liu, John Mookken, Kin Lap
doaj