Results 91 to 100 of about 21,181 (269)
Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires [PDF]
, 2010 We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs).
Feng, X. L. +4 more
core +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This article features a comprehensive methodology for analyzing and optimizing PWM dead time in automotive traction inverters, applicable to a wide range of power devices, including Si IGBT/Diodes, SiC MOSFETs, and Si/SiC Fusion switches. The proposed methodology enables a systematic comparison of dead time characteristics, focusing on part‐to‐part ...
Tomas Reiter +4 more
wiley +1 more source
Journal of Engineering, 2016 An active gate controlled semiconductor protection switch using SiC-MOSFET is proposed to achieve the fault tolerant operation of ISOP (Input Series and Output Parallel) connected multicell dc-dc converter. The SiC-MOSFET with high temperature capability
Yusuke Hayashi +2 more
doaj +1 more source
A Scalable SPICE Electrothermal Compact Model for SiC MOSFETs: A Comparative Study between the LEVEL-3 and the BSIM [PDF]
, 2023 Alessandro Borghese +4 more
openalex +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.Based on the principle of circuit equivalence, this paper proposes a decoupling calculation method for the coupled parasitic inductance matrix. This method transforms the self‐inductances and complex coupled mutual inductances in the traditional coupled parasitic inductance matrix into single equivalent parasitic inductances.
Xiaofeng Yang +7 more
wiley +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.The arm‐multiplexing modular multilevel converter (AM‐MMC) is a lightweight, high‐power‐density topology whose conventional modulation strategies require large circulating currents to maintain energy balance. This paper establishes a time‐domain analytical model of the AM‐MMC energy‐balance mechanism and proposes an optimised independent arm modulation
Zhen Zhang +5 more
wiley +1 more source
Silicon carbide semiconductor technology for high temperature and radiation environments [PDF]
Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented.
Matus, Lawrence G.
core +1 more source
Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs [PDF]
, 2022 Kumiko Konishi +7 more
openalex +1 more source
Performance benchmark of Si IGBTs vs. SiC MOSFETs in small-scale wind energy conversion systems [PDF]
, 2016 Modern power electronics devices based on SiC power MOSFETs technology become more demanding in the last few years. They show better performance over Si-IGBTs on renewable energy power conversion systems due to their higher switching frequency, higher ...
Castellazzi, Alberto +3 more
core +1 more source
Hardware Test and Validation of the Angular Droop Control: Analysis and Experiments
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This work presents the first hardware‐based implementation of angular droop control for grid‐forming converters. By linking active power to angle deviation, the control strategy enables exact frequency regulation and merges primary with secondary control.
Taouba Jouini +3 more
wiley +1 more source