Results 101 to 110 of about 225,573 (220)

Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses. [PDF]

Micromachines (Basel), 2023
Dong H, Wu Y, Li C, Xu H.
europepmc   +1 more source

High-Temperature SiC MOSFET Gas Sensors

, 2004
Due to tightening restrictions on combustion exhaust emissions, low-cost sensors are desired for monitoring NOx production in high-temperature exhaust streams.
Kevin Matocha, Vinayak Tilak, Jesse Tucker, Peter Sandvik   +3 more
core   +1 more source

High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 °C

Global Energy Interconnection, 2019
High-temperature, high-power converters have gained importance in industrial applications given their ability to operate in adverse environments, such as in petroleum exploration, multi-electric aircrafts, and electric vehicles.
Juanjuan Lu, Zhe Zhou, Jianhong Hao, Yi Hao, Hao Zhang, Ruixiang Hao   +5 more
doaj   +1 more source

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance. [PDF]

Micromachines (Basel), 2023
Wu L, Zhang M, Liang J, Liu M, Zhang T, Yang G.   +5 more
europepmc   +1 more source

Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress. [PDF]

Micromachines (Basel), 2023
Qin H, Ba Z, Xie S, Zhang Z, Chen W, Xun Q.   +5 more
europepmc   +1 more source

Behavioral Modeling of SiC MOSFET Static and Dynamic Characteristics Based on Particle Swarm Optimization Algorithm

IEEE Access
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied in electronic equipment, owing to the rapidly switching speed and superior thermal performance.
Zhibo Zhu, Yang Zhao, Wei Yan
doaj   +1 more source

Examining the impacts of DM filters to PFC isolated Ćuk converter for DCM operation by comparing Si and SiC MOSFET. [PDF]

Sci Rep, 2023
Şehirli E.
europepmc   +1 more source

Séminaire Annuel des Doctorant-es en SIC - APPEL A COMMUNICATION

, 2016
Bonjour, Dans le cadre de son prochain Séminaire Annuel des Doctorant-es en SIC, qui aura lieu le vendredi 24 mars 2017, l'ADT-SIC lance le présent appel à communication.
Bureau de l'Adt-SIC
core  

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy. [PDF]

Nanomaterials (Basel), 2021
Fiorenza P, Alessandrino MS, Carbone B, Russo A, Roccaforte F, Giannazzo F.   +5 more
europepmc   +1 more source

Research on the Techniques of High Power SiC-MOSFET Driver

机车电传动, 2018
In order to adapt to the characteristics of SiC-MOSFET, such as faster switching speed, lower loss but lower threshold voltage and weaker short-circuit capacity compared to Si-IGBT, the key techniques of SiC-MOSFET driver was analyzed, including drain ...
ZHOU Shuai, ZHANG Xiaoyong, RAO Peinan, ZHANG Qing, SHI Hongliang   +4 more
doaj