Global Energy Interconnection, 2019 High-temperature, high-power converters have gained importance in industrial applications given their ability to operate in adverse environments, such as in petroleum exploration, multi-electric aircrafts, and electric vehicles.
Juanjuan Lu +5 more
doaj +1 more source
Temperature Characteristics and Junction Temperature Estimation Methods for SiC MOSFET and Si IGBT
Kongzhi Yu Xinxi Jishu, 2016 The output characteristic test circuit, leakage current test circuit and double pulse test circuit were set up to study the effect of temperature characteristics of 1 200 V SiC MOSFET and 1 200 V Si IGBT on output characteristic, leakage current, switch ...
NING Puqi, LI Lei, WEN Xuhui, ZHANG Dong
doaj
Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses. [PDF]
Micromachines (Basel), 2023 Dong H, Wu Y, Li C, Xu H.
europepmc +1 more source
Développement d'un Driver Communicant pour MOSFET SiC
, 2016 Séminaire des jeudis de la com' de l'équipe SCNNous développons un driver dédié à une technologie émergente de semi-conducteurs de puissance qui sont les MOSFET (Metal Oxide Semiconductor Field Effect Transistor) au carbure de silicium (SiC).
Bouguet, Christophe
core +1 more source
A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance. [PDF]
Micromachines (Basel), 2023 Wu L +5 more
europepmc +1 more source
A Novel SiC Vertical Planar MOSFET Design and Optimization for Improved Switching Performance
A novel cell topology for a vertical 1200 V SiC planar double-implanted MOSFET (DMOSFET) is proposed in this work. Based on the conventional linear cell topology and the calibrated two-dimensional (2D) technology computer-aided design (TCAD) model ...
Handoko Linewih +19 more
core +1 more source
Comprehensive study of a 4H-SiC MES-MOSFET
, 2015 In this paper, we studied the enhancement of the breakdown voltage in the 4H–SiC MESFET–MOSFET (MES–MOSFET) structure which we have proposed in our previous work.
Mahabadi, Jamali, Amini Moghadam, Hamid
core +1 more source
Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress. [PDF]
Micromachines (Basel), 2023 Qin H +5 more
europepmc +1 more source
Comparative assessment of 3.3kV/400A SiC MOSFET and Si IGBT power modules
, 2017 In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented.
Ionita , Claudiu +7 more
core +1 more source
Examining the impacts of DM filters to PFC isolated Ćuk converter for DCM operation by comparing Si and SiC MOSFET. [PDF]
Sci Rep, 2023 Şehirli E.
europepmc +1 more source