Results 101 to 110 of about 21,181 (269)

Research on Single-Switch Wireless Power Transfer System Based on SiC MOSFET

IEEE Access, 2019
The traditional wireless power transfer circuit uses the full-bridge or half-bridge inverter, which has complex circuit and control and low reliability.
Houji Li, Chunfang Wang, Yunrui Liu, Rui Yue   +3 more
doaj   +1 more source

Spin resonance of 2D electrons in a large-area silicon MOSFET

, 2007
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface.
A.M. Tyryshkin, Ando, Feher, Friesen, Ghosh, Graeff, Kane, Nestle, Poole, S. Avasthi, S. Shankar, S.A. Lyon, Vrijen, Wallace, Wilamowski, Wilamowski, Young   +16 more
core   +1 more source

A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters [PDF]

, 2017
: Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) have been verified to be a high-efficiency cost-effective device ...
He, Jiangbiao, Katebi, Ramin, Weise, Nathan   +2 more
core   +1 more source

Early fault detection in SiC-MOSFET with application in boost converter

Revista Facultad de Ingeniería Universidad de Antioquia, 2018
This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is
Leobardo Hernández-González, Climaco Arvizu-Ogilvie, Alejandro Tapia-Hernández, Mario Ponce-Silva, Abraham Claudio-Sánchez, Marco Rodríguez-Blanco, Jesús Aguayo-Alquicira   +6 more
doaj  

Research on High Efficient Resonant Full-bridge Converter with High Voltage SiC MOSFET

Kongzhi Yu Xinxi Jishu, 2016
With SiC MOSFET, resonant converter can achieve high frequency and high efficiency, thus increasing the power density with reducing total cost and simplify topology.
Jimmy Liu, John Mookken, Kin Lap
doaj  

Dynamic Voltage Balancing Across Series-Connected 10 kV SiC JBS Diodes in Medium Voltage 3L-NPC Power Converter Having Snubberless Series-Connected 10 kV SiC MOSFETs

IEEE Open Journal of the Industrial Electronics Society
This article addresses the mitigation of dynamic voltage imbalance in series-connected 10 kV silicon carbide (SiC) JBS diodes within a three-level NPC (3L-NPC) converter using active turn-off delay control across complementary series-connected 10 kV SiC ...
Sanket Parashar, Nithin Kolli, Raj Kumar Kokkonda, Ajit Kanale, Subhashish Bhattacharya, Bantval Jayant Baliga   +5 more
doaj   +1 more source

High-temperature characteristics of SiC module and 100 kW SiC AC-DC converter at a junction temperature of 180 °C

Global Energy Interconnection, 2019
High-temperature, high-power converters have gained importance in industrial applications given their ability to operate in adverse environments, such as in petroleum exploration, multi-electric aircrafts, and electric vehicles.
Juanjuan Lu, Zhe Zhou, Jianhong Hao, Yi Hao, Hao Zhang, Ruixiang Hao   +5 more
doaj   +1 more source

Evaluation of Silicone Carbide Mosfet Driving Circuit Performance

Communications
The performances of different driving circuits configurations designed for silicon carbide MOSFET transistors are compared in this research. The simulation of the double-pulse test (DPT) was performed with the use of three driving circuit configurations.
Veronika Švárna, Michal Frivaldsky
doaj   +1 more source

Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses. [PDF]

Micromachines (Basel), 2023
Dong H, Wu Y, Li C, Xu H.
europepmc   +1 more source

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance. [PDF]

Micromachines (Basel), 2023
Wu L, Zhang M, Liang J, Liu M, Zhang T, Yang G.   +5 more
europepmc   +1 more source