Results 121 to 130 of about 21,181 (269)

Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory

, 2009
The static switching properties and readout characteristics of proposed high-speed and nonvolatile nanoelectromechanical (NEM) memory devices are investigated By conducting a three-dimensional finite element mechanical simulation combined with an ...
Arai, T, Mizuta, H, Nagami, T, Oda, S, Saito, S, Shimada, T, Tsuchiya, Y   +6 more
core   +1 more source

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy. [PDF]

Nanomaterials (Basel), 2021
Fiorenza P, Alessandrino MS, Carbone B, Russo A, Roccaforte F, Giannazzo F.   +5 more
europepmc   +1 more source

Investigation of Fault-Tolerant Capabilities in an Advanced Three-Level Active T-Type Converter [PDF]

, 2019
A novel fault-tolerant three-level power converter topology, named advanced three-level active T-Type (A3L-ATT) converter, is introduced to increase the reliability of multilevel power converters used in safety-critical applications.
He, Jiangbiao, Katebi, Ramin, Weise, Nathan   +2 more
core   +1 more source

Research on the Techniques of High Power SiC-MOSFET Driver

机车电传动, 2018
In order to adapt to the characteristics of SiC-MOSFET, such as faster switching speed, lower loss but lower threshold voltage and weaker short-circuit capacity compared to Si-IGBT, the key techniques of SiC-MOSFET driver was analyzed, including drain ...
ZHOU Shuai, ZHANG Xiaoyong, RAO Peinan, ZHANG Qing, SHI Hongliang   +4 more
doaj  

Experimental Investigation of SiC MOSFET-Based Isolated Dual Active Half-Bridge Converter: Hard-Switching Versus Soft-Switching

Electrica
: This article presents the performance evaluation of an isolated dual active half-bridge (DAHB) converter with discrete SiC MOSFET devices. The impact of a resonant network on the SiC MOSFET DAHB under two different modes is investigated.
Veera Venkata Subrahmanya Kumar Bhajana, Pravat Biswal, Pavel Drabek, Vijay Kakani   +3 more
doaj   +1 more source

Cryogenic Parametric Characterization of Gallium Nitride Switches [PDF]

This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect ...
Gonzalez, Marcelo C., Kohlman, Lee W., Trunek, Andrew J.   +2 more
core   +1 more source

Thermal Management and Experimental Validation of a Copper-Inlay PCB for SiC MOSFETs in High-Power EV Fast Chargers

IEEE Open Journal of Power Electronics
Efficient thermal management is essential to ensure reliability and performance in high-power electric vehicle (EV) fast-charging converters employing silicon carbide (SiC) MOSFETs.
Muhammad Awais, Saghir Amin, Francisco P. Brito, Nuno Costa, Joao L. Afonso, Vitor Monteiro   +5 more
doaj   +1 more source

Impact of gamma-ray irradiation on commercial silicon carbide MOSFET with boost converter application

Power Electronic Devices and Components
This paper study impact of gamma-ray irradiation on the characteristics of silicon carbide power metal oxide semiconductor field effect transistor (SiC MOSFET) from CREE, Inc., and its corresponding effects on the operation of 5/12 V DC-DC boost ...
S. M. Abd El-Azeem, W. Abd El-Basit
doaj   +1 more source

Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load [PDF]

, 2021
S. Baba
openalex   +1 more source

Development of silicon carbide semiconductor devices for high temperature applications [PDF]

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications.
Matus, Lawrence G., Petit, Jeremy B., Powell, J. Anthony   +2 more
core   +1 more source