Results 121 to 130 of about 225,573 (220)

Vidéos de la 2e séance du SIC, Lille 3, 17 avril 2015

, 2015
Les vidéos de la deuxième du SIC sont désormais disponibles en ligne sur le site de la WebTv de Lille3. Vous pouvez également les visionner ci-dessous. L'intervention d'Ilona Delouette et de Laurie Baveye ne sont pas disponibles.
sic
core  

Design of 3C-SiC/Si vertical MOSFET [PDF]

, 2015
Metal-Oxide-Semiconductor Field Effect transistor (MOSFET) has undergone scaling to improve performance, and it is presently at the sub-100nm technology node.
Reddy Veesam, Vamshi Vardhan
core  

A Novel SiC Vertical Planar MOSFET Design and Optimization for Improved Switching Performance

A novel cell topology for a vertical 1200 V SiC planar double-implanted MOSFET (DMOSFET) is proposed in this work. Based on the conventional linear cell topology and the calibrated two-dimensional (2D) technology computer-aided design (TCAD) model ...
Handoko Linewih, Jisheng Han, Han, J, Rui Jin, Xiran Chen, Liu, S, Linewih, H, Chen, X, He, Y, Zheyang Li, Feng He, Jin, R, He, F, Shijie Liu, Zhong, Y, Ling Sang, Li, Z, Yu Zhong, Sang, L, Yawei He   +19 more
core   +1 more source

3 minutes - 1 thèse, une animation proposée par l'association Alec-SIC lors des journées doctorales 2017 de la SFSIC

, 2017
Dans le cadre des journées doctorales de la SFSIC qui se dérouleront les 14, 15 et 16 juin 2017 à Lyon, l'association lyonnaise de doctorant-es en SIC Alec-SIC organise deux évènements : mercredi 14 juin soir, une animation "3 minutes - 1 thèse",
Bureau de l'Adt-SIC
core  

Design of a SiC MOSFET Gate Driver Chip Based on Adaptive Active Drive Technology. [PDF]

Micromachines (Basel)
Li Q, Zhang Y, Huang B, Zhang W, Chen C, Lei J, Zhang D, Min R, Tong Q.   +8 more
europepmc   +1 more source

Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. [PDF]

Nanomaterials (Basel)
Yu M, Shen Y, Ma H, Zhang Q.
europepmc   +1 more source

Characteristics of a 1200 V Hybrid Power Switch Comprising a Si IGBT and a SiC MOSFET. [PDF]

Micromachines (Basel)
Sheikhan A, Narayanan EMS.
europepmc   +1 more source

SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network. [PDF]

Micromachines (Basel)
Niu X, Sang L, Duan X, Gu S, Zhao P, Zhu T, Xu K, He Y, Li Z, Zhang J, Jin R.   +10 more
europepmc   +1 more source

MOSFET verticali 1200 V in SiC

, 2008
Si tratta di MOSFET verticali in SiC con epitassia di 8 microns e struttura a celle.
F Roccaforte, F Giannazzo, F Frisina, M Saggio, E Zanetti, V Raineri   +5 more
core  

1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]

Micromachines (Basel)
Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
europepmc   +1 more source