Gate Driver Untuk Susunan Seri Sic-Mosfet Menggunakan Pengendali Proporsional-Integral (Pi).
Koneksi serial SiC-MOSFET dapat digunakan untuk mendapatkan tegangan yang lebih tinggi daripada tegangan tiap perangkat SiC-MOSFET, namun dapat muncul permasalahan berupa ketidakseimbangan tegangan drain-source di antara perangkat-perangkat yang ...
Prof. Dr. Ir. Rini Nur Hasanah, S.T., M.Sc., IPU., ASEAN Eng., APEC Eng. +2 more
core +1 more source
Study and implementation of SiC MOSFET power modules for future utilisation in railway converters
, 2013 Le Carbure de Silicium (SiC) va permettre de repousser les limites des convertisseurs dans trois directions : tenue en tension élevée, haute température de fonctionnement et forte vitesse de commutation.
Fabre, Joseph
core
Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode
, 2019 Eliminating antiparallel silicon carbide Schottky barrier diode (SiC SBD) and making use of the intrinsic body diode of SiC metal-oxide-semiconductor-field-effect transistor (SiC MOSFET) offer a cost-effectiveness solution without obviously sacrificing ...
Jun Wang (5906) +7 more
core +1 more source
Design of 3C-SiC/Si vertical MOSFET
, 2015 Metal-Oxide-Semiconductor Field Effect transistor (MOSFET) has undergone scaling to improve performance, and it is presently at the sub-100nm technology node.
Reddy Veesam, Vamshi Vardhan
core
Design of a SiC MOSFET Gate Driver Chip Based on Adaptive Active Drive Technology. [PDF]
Micromachines (Basel)Li Q +8 more
europepmc +1 more source
Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET. [PDF]
Nanomaterials (Basel)Yu M, Shen Y, Ma H, Zhang Q.
europepmc +1 more source
Characteristics of a 1200 V Hybrid Power Switch Comprising a Si IGBT and a SiC MOSFET. [PDF]
Micromachines (Basel)Sheikhan A, Narayanan EMS.
europepmc +1 more source
SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network. [PDF]
Micromachines (Basel)Niu X +10 more
europepmc +1 more source
1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]
Micromachines (Basel)Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
europepmc +1 more source
A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub>. [PDF]
Micromachines (Basel)Cui W, Guo J, Xu H, Zhang DW.
europepmc +1 more source