Results 121 to 130 of about 1,059 (165)
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Combination of a 4H-SiC MESFET with a 4H-SiC MOSFET to realize a high voltage MOSFET
2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies, 2011In this paper we propose for the first time a novel 4H-SiC MOSFET in order to increase breakdown voltage. Key idea in this work is to utilize better reduced surface field (RESURF) by combination the good features of a buried gate MESFET with a conventional MOSFET. Therefore proposed structure is called MES-MOSFET structure.
null Hamid Amini Moghadam +2 more
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Materials Science Forum, 2012
Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent
Mrinal K. Das +5 more
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Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent
Mrinal K. Das +5 more
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IEEE Electron Device Letters, 1986
Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid
Y. Kondo +8 more
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Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid
Y. Kondo +8 more
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Active Switching with SiC MOSFETs
2019 IEEE Energy Conversion Congress and Exposition (ECCE), 2019The work in this paper presents a methodology to overcome the coupled nature of dv/dt and di/dt to gate drive resistance and stray commutation inductance for a SiC MOSFET. The SiC MOSFET exhibits almost ideal switching behavior, corresponding closely to the simplified device equations.
Patrick Palmer +2 more
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Materials Science Forum, 2016
This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance RDS,on of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the RDS,on by approximately 25 % can be achieved using square-shaped
Christian T. Banzhaf +4 more
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On the subthreshold measurements of SIC MOSFETs
2008 IEEE International Conference on Semiconductor Electronics, 2008Reported here are subthreshold measurements on n-channel 6H-SiC MOSFETs over a range of temperatures. A simple theoretical model is presented to explain their general form. It is shown that the temperature dependence of the subthreshold current indicates a high density of electronic states at or near the SiC-SiO2 interface.
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Fabrication and evaluation of SiC inverter using SiC-MOSFET
2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS), 2013This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A) and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 ...
A. Yamane +4 more
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Comparison of 3C-SiC and 4H-SiC Power MOSFETs
Materials Science Forum, 2018A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation.
Bart J. Van Zeghbroeck, Hamid Fardi
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Dynamic On-State Resistance in SiC MOSFETs
2023 IEEE International Reliability Physics Symposium (IRPS), 2023Ronald Green +4 more
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Reliability studies of SiC vertical power MOSFETs
2018 IEEE International Reliability Physics Symposium (IRPS), 2018Power metal-oxide-semiconductor field-effect transistors (MOSFETs) experience conditions of high field during normal operation, with high MOS gate oxide field in the on-state, and high drift and termination fields in the blocking state. Moreover, silicon carbide devices typically experience higher fields than comparable Si devices due to channel and ...
Daniel J. Lichtenwalner +9 more
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