Results 141 to 150 of about 4,517 (219)

A split gate double-channel asymmetric SiC trench MOSFET for improved gate oxide reliability and dynamic characteristics. [PDF]

Sci Rep
Xu F, Dong Y, Li F, Xie F, Guo P, Zhou Y, Liu Y, Meng X, Cao R, Xue Y.   +9 more
europepmc   +1 more source

A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability. [PDF]

Materials (Basel)
Feng Z, Lai P, Hasan ASMK, Fatani F, Alaeddini A, Huang L, Chen Z, Li Q.   +7 more
europepmc   +1 more source

Review of Prognosis Approaches Applied to Power SiC MOSFETs for Health State and Remaining Useful Life Prediction. [PDF]

Entropy (Basel)
Kumar S, Allard B, Hologne-Carpentier M, Clerc G, Auger F.   +4 more
europepmc   +1 more source

A Si/SiC Heterojunction Double-Trench MOSFET with Improved Conduction Characteristics. [PDF]

Micromachines (Basel)
Kang Y, Liu D, Li T, Qiu Z, Lu S, Hu X.
europepmc   +1 more source

Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices. [PDF]

Sci Adv
Zhou H, Zhou M, Xiang M, Gong H, Gao G, Wang C, Zhang Y, Dang K, Liu Z, Zhang J, Zhang H, Wang Y, Wang H, Si M, Zhang Y, Hao Y, Zhang J.   +16 more
europepmc   +1 more source

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source

Advances and Perspectives in Gate Dielectric Thin Films for 4H-SiC MOSFETs. [PDF]

Materials (Basel)
Bai Z, Liang J, Ding C, Zhou Z, Luo M, Gu L, Ma HP, Zhang QC.   +7 more
europepmc   +1 more source

Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025. [PDF]

Materials (Basel)
Roccaforte F.
europepmc   +1 more source

A Junction Temperature Prediction Method Based on Multivariate Linear Regression Using Current Fall Characteristics of SiC MOSFETs. [PDF]

Sensors (Basel)
Qin H, Zhang Y, Zeng Y, Kang Y, Zhu Z, Wu F.   +5 more
europepmc   +1 more source

Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC. [PDF]

Nat Commun
Shen Y, Qi X, Li Y, Guo Y, Huang Q, Dai W, Yuan Q, Gu L, Ding C, Chen WJ, Yang M, Jia Z, Lin CT, Jiang N, Sun F, Zhang QJ, Ma HP.   +16 more
europepmc   +1 more source