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An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures [PDF]
MicromachinesThe body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region.
Jiashu Qian +8 more
doaj +4 more sources
Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n−/n+-Buffer Layer [PDF]
Micromachines, 2022 In this paper, a novel silicon super-junction (SJ) MOSFET embedded with a soft reverse recovery body diode is proposed and studied by numerical simulation.
Zhi Lin +4 more
doaj +2 more sources
Single and Repetitive Surge Reliability of 1200 V Asymmetric Trench SiC MOSFETs Under Various Gate Biases [PDF]
MicromachinesThe parameter degradation and failure mechanisms of 1200 V asymmetric trench-type (AT) silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) under various single and repetitive surge currents, with various gate bias voltages (
Menglin Yan +7 more
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TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode [PDF]
Micromachines, 2022 In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation.
Ruoyu Wang +5 more
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Body diode reliability investigation of SiC power MOSFETs [PDF]
Microelectronics Reliability, 2016 A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to their demonstration of an acceptable level of reliability. Recent improvements in Silicon Carbide (SiC)
Asad Fayyaz
exaly +3 more sources
High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Energies, 2022 Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration.
Jaeyeop Na, Minju Kim, Kwangsoo Kim
doaj +1 more source
Materials Science Forum, 2023 SiC MOSFETs display reliability issues related to the quality of SiO2/SiC interface and bulk material due to the presence of near interface traps and point and extended material defects [1]. These material related issues give rise to a degradation of device reliability and ruggedness.
Lee, Geon Hee +3 more
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An Experimental Investigation of MOSFET Intrisic Body Diode Performance [PDF]
2018 IEEE 27th International Symposium on Industrial Electronics (ISIE), 2018 In order to enable evaluation of power loss during both forward and reverse conduction of intrinsic body diodes in power MOSFETs, an experimental series is performed to derive a set of expressions to approximate performance. A set of relevant performance metrics are selected, and then tested over a range of devices.
Petersen, A., Stone, D.A., Foster, M.P.
openaire +2 more sources
The Road to a Robust and Affordable SiC Power MOSFET Technology
Energies, 2021 This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold ...
Hema Lata Rao Maddi +9 more
doaj +1 more source
Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
doaj +1 more source