An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures [PDF]
MicromachinesThe body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region.
Jiashu Qian +8 more
doaj +5 more sources
Body diode reliability investigation of SiC power MOSFETs [PDF]
Microelectronics Reliability, 2016 A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to their demonstration of an acceptable level of reliability. Recent improvements in Silicon Carbide (SiC)
Asad Fayyaz
exaly +4 more sources
First results on 1.2 kV SiC MOSFET body diode robustness tests
Microelectronics Reliability, 2023 The paper proposes a methodology study to analyze the body diode robustness of SiC MOSFETs. Devices from different manufacturers are used to validate the analysis. Two types of stresses have been applied: a continuous conduction test (BDCT) or a pulsed conduction test, the classical half-sine surge current test applied to body diodes, BDSCT.
D Trémouilles +2 more
exaly +9 more sources
Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n−/n+-Buffer Layer [PDF]
Micromachines, 2022 In this paper, a novel silicon super-junction (SJ) MOSFET embedded with a soft reverse recovery body diode is proposed and studied by numerical simulation.
Zhi Lin +4 more
doaj +2 more sources
EnergiesIn a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature.
Junke Wu +5 more
doaj +4 more sources
TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode [PDF]
Micromachines, 2022 In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation.
Ruoyu Wang +5 more
doaj +2 more sources
A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
MicromachinesIn this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
doaj +2 more sources
Diode laser versus scalpel in the surgical treatment of infant ankyloglossia: a randomized, parallel, double-blind, controlled clinical trial [PDF]
BMC PediatricsBackground Ankyloglossia can impair vital functions such as breastfeeding, swallowing, and maxillomandibular development, making effective treatment essential.
Mariana Laprovitera Teixeira Carneiro +12 more
doaj +2 more sources
Validation of In vivo Diode Characteristics at Extended Source to Surface Distance for Total Body Irradiation [PDF]
Journal of Medical PhysicsThe application of ISORAD diode detectors in treatments like total body irradiation (TBI), where small fractions of potentially lethal doses are delivered, lacks comprehensive clarity and requires further investigation.
K Nithin +3 more
doaj +2 more sources
High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Energies, 2022 Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration.
Jaeyeop Na, Minju Kim, Kwangsoo Kim
doaj +1 more source