Results 1 to 10 of about 27,208 (258)

GA-LSTM-Based Degradation Prediction for IGBTs in Power Electronic Systems

Energies
The reliability and lifetime of insulated gate bipolar transistors (IGBTs) are critical to ensuring the stability and safety of power electronic systems.
Yunfeng Qiu, Zehong Li, Shan Tian
doaj   +1 more source

Numerical analysis of the effect of configuration of flow channels on current distribution in high temperature proton exchange fuel cells

Revue des Énergies Renouvelables
In this study, the steady-state effects of bipolar plate flow-channel configuration in high-temperature proton exchange membrane fuel cells (HT-PEMFCs) are investigated using the COMSOL® Multiphysics software.
Mehmet Turgay Pamuk
doaj   +1 more source

Junction Parameter Extraction for Electronic Device Characterization

Active and Passive Electronic Components, 2004
A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters.
S. Dib, C. Salame, N. Toufik, A. Khoury, F. Pélanchon, P. Mialhe   +5 more
doaj   +1 more source

Interface degradation and field screening mechanism behind bipolar-cycling fatigue in ferroelectric capacitors

APL Materials, 2021
Polarization fatigue, i.e., the loss of polarization of ferroelectric capacitors upon field cycling, has been widely discussed as an interface related effect. However, mechanism(s) behind the development of fatigue have not been fully identified.
M. T. Do, N. Gauquelin, M. D. Nguyen, F. Blom, J. Verbeeck, G. Koster, E. P. Houwman, G. Rijnders   +7 more
doaj   +1 more source

Surface Modification of Titanium Bipolar Plates with TiN/SBR Coating for PEM Water Electrolysis

Electrochemistry
A coating consisting of titanium nitride (TiN) microparticles and styrene butadiene rubber (SBR) was developed as a surface treatment for titanium (Ti) anode bipolar plates used in proton exchange membrane (PEM) water electrolysis, in place of ...
Ayumu MINOURA, Masanobu KUMAGAI, Hitoshi YASHIRO, Harumi OKABE, Hideo MICHIBATA, Masatsugu MURASE   +5 more
doaj   +1 more source

Reliability Analysis and Design of MMC Based on Mission Profile for the Components Degradation

IEEE Access, 2020
In the field of high voltage level applications, modular multi-level converter (MMC) has the definite advantages of low power loss and modularity and there have been many studies on its reliability.
Gaotai Lv, Wanjun Lei, Meng Wang, Chunlin Lv, Jiaqi Zhao   +4 more
doaj   +1 more source

A Machine Learning Approach to Predict Radiation Effects in Microelectronic Components

Sensors
This paper presents an innovative technique, Advanced Predictor of Electrical Parameters, based on machine learning methods to predict the degradation of electronic components under the effects of radiation.
Fernando Morilla, Jesús Vega, Sebastián Dormido-Canto, Amor Romero-Maestre, José de-Martín-Hernández, Yolanda Morilla, Pedro Martín-Holgado, Manuel Domínguez   +7 more
doaj   +1 more source

Reinforcement design method for 4H-SiC power devices targeting total dose effect

Dianzi Jishu Yingyong
This article introduces the impact of total dose effect on 4H-SiC power devices and corresponding reinforcement schemes. Firstly, the electrical characteristics of 4H-SiC power devices and the radiation environment they face during operation were ...
Wang Jinlong, Sun Kai
doaj   +1 more source

A Neutrosophic Triplet Partial Bipolar Metric Framework for Quantifying AI-Generated Digital Media Content Quality [PDF]

Neutrosophic Sets and Systems
This paper proposes a novel mathematical framework for evaluating the quality of digital media based on the artificial intelligence using neutrosophic triplet partial bipolar metric spaces (NTpbMS).
Shiming Ma, Shan Lu, Quansheng Liu
doaj   +1 more source

Modelling of Hfe avalanche degradation in gate controlled bipolar transistors

Revue de Physique Appliquée, 1978
The avalanche degradation phenomenon model presented here takes into account both : an increase of surface recombination rate localized near the initial intrinsic point in the junction transition region surface and a displacement of the intrinsic point due to the oxide injected charge.
Roux, Ph., Dom, J.P., Cazenave, Ph., Nouel, P.   +3 more
openaire   +3 more sources