Results 1 to 10 of about 28,229 (117)
Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation [PDF]
Scientific Reports, 2022 4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar ...
Masashi Kato +4 more
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Unipolar and Bipolar Plasma Electrolytic Oxidation (PEO) Coatings with Zeolite Additives for Photocatalytic Applications [PDF]
MoleculesPlasma electrolytic oxidation (PEO) enables the fabrication of multifunctional oxide coatings with embedded active phases, offering a promising route for durable photocatalytic surfaces in water purification. This study examines how the electrical regime
Kristina Mojsilović +3 more
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Hotspot to Homogeneous: Amorphous Interfacial Current Redistribution Enables Stable Solid-State Lithium-Metal Batteries [PDF]
Nano-Micro LettersHighlights Surface grain boundaries in oxide electrolytes are identified as bipolar interfacial hotspots that actively drive lithium dendrite growth and cathode degradation through electron leakage and current focusing.
Cuiyun Yang +10 more
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R&D of 3 300V SiC MOSFET With Embedded SBD
Zhongguo dianli, 2021 In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky ...
Guoyou LIU +3 more
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A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance
Micromachines, 2023 In this article, a 1.2-kV-rated double-trench 4H-SiC MOSFET with an integrated low-barrier diode (DT-LBDMOS) is proposed which eliminates the bipolar degradation of the body diode and reduces switching loss while increasing avalanche stability.
Lijuan Wu +5 more
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A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching
Micromachines, 2023 A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper.
Ping Li +3 more
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Micromachines, 2023 A 6500 V SiC trench MOSFET with integrated unipolar diode (UD-MOS) is proposed to improve reverse conduction characteristics, suppress bipolar degradation, and reduce switching loss.
Hao Wu +6 more
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Status and perspectives of key materials for PEM electrolyzer
Nano Research Energy, 2022 Proton exchange membrane water electrolyzer (PEMWE) represents a promising technology for the sustainable production of hydrogen, which is capable of efficiently coupling to intermittent electricity from renewable energy sources (e.g., solar and wind ...
Kexin Zhang +10 more
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SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance
IEEE Journal of the Electron Devices Society, 2020 In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCDMOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed ...
Xintian Zhou +7 more
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Scientific Reports, 2021 Regulator of G-protein signaling 7 (RGS7) is predominately present in the nervous system and is essential for neuronal signaling involving G-proteins. Prior studies in cultured cells showed that RGS7 is regulated via proteasomal degradation, however no ...
Marie E. Fina +6 more
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