Results 1 to 10 of about 181,039 (244)

Sodium diffusion in 4H-SiC [PDF]

APL Materials, 2014
Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution.
M. K. Linnarsson, A. Hallén
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Mechanism of Tailoring Laser-Induced Periodic Surface Structures on 4H-SiC Crystal Using Ultrashort-Pulse Laser [PDF]

Nanomaterials
In this study, we examine the characteristics of laser-induced periodic surface structures (LIPSSs) fabricated on N-doped 4H-SiC (N-SiC) and high-purity 4H-SiC (HP-SiC) crystals using femtosecond–picosecond lasers. The effects of various laser parameters
Erxi Wang, Chong Shan, Xiaohui Zhao, Huamin Kou, Qinghui Wu, Dapeng Jiang, Xing Peng, Penghao Xu, Zhan Sui, Yanqi Gao   +9 more
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Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Scientific Reports, 2022
4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar ...
Masashi Kato, Ohga Watanabe, Toshiki Mii, Hitoshi Sakane, Shunta Harada   +4 more
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Dislocation-related leakage-current paths of 4H silicon carbide

Frontiers in Materials, 2023
Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy.
Wandong Gao, Wandong Gao, Guang Yang, Yixiao Qian, Yixiao Qian, Xuefeng Han, Xuefeng Han, Can Cui, Xiaodong Pi, Xiaodong Pi, Deren Yang, Deren Yang, Rong Wang, Rong Wang   +13 more
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Analysis of carrier recombination coefficients of 3C- and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC

AIP Advances, 2023
In recent years, 4H-SiC power devices have been widely employed in power electronic systems owing to their superior performance to Si power devices. However, stacking faults in 4H-SiC can degrade the device performance.
Kazuhiro Tanaka, Masashi Kato
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Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Advanced Materials Interfaces, 2023
4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones.
Wantang Wang, Xuesong Lu, Xinke Wu, Yiqiang Zhang, Rong Wang, Deren Yang, Xiaodong Pi   +6 more
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Theoretical study of the band structure of 2H-SiC and 4H-SiC of silicon carbide polytypes

Condensed Matter Physics, 2021
We have studied the electronic band properties of 2H-SiC and 4H-SiC silicon carbide polytypes. The structures of the electronic bands and density of state (DOS) using ab initio Density Functional Theory (DFT) were calculated for the first Brillouin zone ...
A. V. Sinelnik, A. V. Semenov
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Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Advanced Materials Interfaces, 2023
High‐efficiency and low‐loss processing is the mainstay to reduce the cost and deepen the application of 4H silicon carbide (4H‐SiC) wafers in high‐power and high‐frequency electronics.
Wenhao Geng, Qinqin Shao, Yan Pei, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang   +7 more
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Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Nanomaterials, 2023
Silicon carbide (SiC) is a promising material for thermoelectric power generation. The characterization of thermal transport properties is essential to understanding their applications in thermoelectric devices.
Kaili Yin, Liping Shi, Xiaoliang Ma, Yesheng Zhong, Mingwei Li, Xiaodong He   +5 more
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Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Micromachines, 2021
Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP)
Gaoling Ma, Shujuan Li, Xu Liu, Xincheng Yin, Zhen Jia, Feilong Liu   +5 more
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