Results 1 to 10 of about 669 (118)

Sodium diffusion in 4H-SiC [PDF]

APL Materials, 2014
Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution.
M. K. Linnarsson, A. Hallén
doaj   +2 more sources

Dislocation-related leakage-current paths of 4H silicon carbide

Frontiers in Materials, 2023
Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy.
Wandong Gao, Wandong Gao, Guang Yang, Yixiao Qian, Yixiao Qian, Xuefeng Han, Xuefeng Han, Can Cui, Xiaodong Pi, Xiaodong Pi, Deren Yang, Deren Yang, Rong Wang, Rong Wang   +13 more
doaj   +1 more source

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Scientific Reports, 2022
4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar ...
Masashi Kato, Ohga Watanabe, Toshiki Mii, Hitoshi Sakane, Shunta Harada   +4 more
doaj   +1 more source

Analysis of carrier recombination coefficients of 3C- and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC

AIP Advances, 2023
In recent years, 4H-SiC power devices have been widely employed in power electronic systems owing to their superior performance to Si power devices. However, stacking faults in 4H-SiC can degrade the device performance.
Kazuhiro Tanaka, Masashi Kato
doaj   +1 more source

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review [PDF]

Energies, 2019
This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular, the work compares the benefits and drawbacks of different techniques to assess the physical parameters describing the electronic properties and the current transport at ...
Fiorenza Patrick, Giannazzo Filippo, Roccaforte Fabrizio   +2 more
openaire   +2 more sources

Theoretical study of the band structure of 2H-SiC and 4H-SiC of silicon carbide polytypes

Condensed Matter Physics, 2021
We have studied the electronic band properties of 2H-SiC and 4H-SiC silicon carbide polytypes. The structures of the electronic bands and density of state (DOS) using ab initio Density Functional Theory (DFT) were calculated for the first Brillouin zone ...
A. V. Sinelnik, A. V. Semenov
doaj   +1 more source

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Advanced Materials Interfaces, 2023
4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones.
Wantang Wang, Xuesong Lu, Xinke Wu, Yiqiang Zhang, Rong Wang, Deren Yang, Xiaodong Pi   +6 more
doaj   +1 more source

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Advanced Materials Interfaces, 2023
High‐efficiency and low‐loss processing is the mainstay to reduce the cost and deepen the application of 4H silicon carbide (4H‐SiC) wafers in high‐power and high‐frequency electronics.
Wenhao Geng, Qinqin Shao, Yan Pei, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang   +7 more
doaj   +1 more source

Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates [PDF]

Micromachines, 2019
The stress state is a crucial parameter for the design of innovative microelectromechanical systems based on silicon carbide (SiC) material. Hence, mechanical properties of such structures highly depend on the fabrication process. Despite significant progresses in thin-film growth and fabrication process, monitoring the strain of the suspended SiC thin-
Messaoud, Jaweb, Michaud, Jean-François, Certon, Dominique, Camarda, Massimo, Piluso, Nicolò, Barcella, Flavien, Alquier, Daniel, Colin, Laurent   +7 more
openaire   +5 more sources

Thermal Evolution of Deuterium in 4H-Sic [PDF]

MRS Proceedings, 2002
Abstract4H-SiC samples were implanted at room temperature with 30 keV D+ ions at a dose of 5×1016 D+/cm2. Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were performed to study the deuterium profiles after subsequent annealing at 1000-1250°C for 10min.Also, analytical techniques: RBS/C and thermal desorption ...
Delamare, Romain, Ntsoenzok, E., Sauvage, T., Shiryaev, A., van Veen, A., Dubois, Ch.   +5 more
openaire   +2 more sources