Results 31 to 40 of about 240,009 (234)
Fabrication of Photonic Resonators in Bulk 4H‐SiC [PDF]
Advanced Materials Technologies, 2021 AbstractThe design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work, a Faraday cage‐based oblique angle etch method is applied to fabricate various functional photonic devices from 4H Silicon Carbide (SiC)—a material ...
Otto Cranwell Schaeper +6 more
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First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction
Advances in Condensed Matter Physics, 2018 First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and ...
Bei Xu +7 more
doaj +1 more source
Nanomaterials, 2022 Silicon carbide (SiC) is a promising semiconductor material for making high-performance power electronics with higher withstand voltage and lower loss. The development of cost-effective machining technology for fabricating SiC wafers requires a complete ...
Haoxiang Wang +4 more
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Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique. [PDF]
, 2008 Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm.
Cheong, Kuan Yew +2 more
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Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser
Crystals, 2022 The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time.
Hanwen Wang +6 more
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Oxidation removal mechanism based on ReaxFF-MD in 4H-SiC CMP
Jin'gangshi yu moliao moju gongchengObjectivesSilicon carbide has the advantages of high temperature stability, high electron mobility, and wide bandgap, and has been widely used in fields such as new energy vehicles, photovoltaics, and integrated circuits.
Tianyu ZHANG +7 more
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Design Considerations for 4H-SiC Lateral BJTs for High Temperature Logic Applications
IEEE Journal of the Electron Devices Society, 2018 4H-silicon carbide (SiC)-based bipolar integrated circuits (ICs) are suitable alternatives to silicon (Si)-based ICs in high temperature applications, owing to superior properties of 4H-SiC and the robust performance of SiC bipolar junction transistors ...
Amna Siddiqui +2 more
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A look underneath the SiO2/4H-SiC interface after N2O thermal treatments
Beilstein Journal of Nanotechnology, 2013 The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance ...
Patrick Fiorenza +6 more
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On-State Voltage Drop Analytical Model for 4H-SiC Trench IGBTs
Crystals, 2022 In this paper, a model for the forward voltage drop in a 4H-SiC trench IGBT is developed. The analytical model is based on the 4H-SiC trench MOSFET voltage model and the hole-carrier concentration profile in the N-drift region for a conventional 4H-SiC ...
Yanjuan Liu, Dezhen Jia, Junpeng Fang
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Highly sensitive p-type 4H-SiC Van der Pauw sensor [PDF]
, 2018 This paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices.
Nguyen, Nam-Trung +23 more
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