Results 31 to 40 of about 702 (151)
A look underneath the SiO2/4H-SiC interface after N2O thermal treatments
Beilstein Journal of Nanotechnology, 2013 The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance ...
Patrick Fiorenza +6 more
doaj +1 more source
Micromachines, 2023 Although many refractory metals have been investigated as the choice of contact metal in 4H-SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for harsh environment applications has not been investigated adequately ...
Krishna C. Mandal +2 more
doaj +1 more source
On-State Voltage Drop Analytical Model for 4H-SiC Trench IGBTs
Crystals, 2022 In this paper, a model for the forward voltage drop in a 4H-SiC trench IGBT is developed. The analytical model is based on the 4H-SiC trench MOSFET voltage model and the hole-carrier concentration profile in the N-drift region for a conventional 4H-SiC ...
Yanjuan Liu, Dezhen Jia, Junpeng Fang
doaj +1 more source
Integrated photoanode based on silicon carbide nanowire arrays for efficient water splitting
工程科学学报, 2023 In the context of rapid social development, it is urgent to address the increasingly prominent issues of fossil energy depletion and environmental pollution.
Lin-lin ZHOU +4 more
doaj +1 more source
Holos, 2019 AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and
Masoud Sabaghi
doaj +1 more source
Advanced Materials, EarlyView.Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji +15 more
wiley +1 more source
Simple method for the growth of 4H silicon carbide on silicon substrate
AIP Advances, 2016 In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat.
M. Asghar +6 more
doaj +1 more source
Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer
Micromachines, 2019 In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy
Yongwei Li +8 more
doaj +1 more source
Advanced Materials Interfaces, EarlyView.A controlled layer‐by‐layer growth process integrates conjugated metal‐organic framework thin films onto a hierarchical 3D laser‐induced graphene scaffold. When incorporated into an extended‐gate field‐effect transistor configuration, this synergistic hybrid platform achieves robust aptamer immobilization, driving highly selective, picomolar‐level ...
Khanh T. M. Le +2 more
wiley +1 more source
Anisotropic hole drift velocity in 4H-SiC [PDF]
Materials Science and Engineering: B, 2019 A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on a nonlinear quantum kinetic theory which provides a clear description of the dissipative phenomena that are evolving in the system.
Vasconcelos, Jackelinne L. +2 more
openaire +2 more sources