Results 31 to 40 of about 181,039 (244)
M-Center in Neutron-Irradiated 4H-SiC [PDF]
Crystals, 2021 We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon
Ivana Capan +4 more
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Nanomaterials, 2022 Silicon carbide (SiC) is a promising semiconductor material for making high-performance power electronics with higher withstand voltage and lower loss. The development of cost-effective machining technology for fabricating SiC wafers requires a complete ...
Haoxiang Wang +4 more
doaj +1 more source
Thermoresistance of p-Type 4H-SiC Integrated MEMS Devices for High-Temperature Sensing [PDF]
, 2019 There is an increasing demand for the development and integration of multifunctional sensing modules into power electronic devices that can operate in high temperature environments.
Nguyen, Nam-Trung +11 more
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First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction
Advances in Condensed Matter Physics, 2018 First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations. Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and ...
Bei Xu +7 more
doaj +1 more source
Fabrication of Photonic Resonators in Bulk 4H‐SiC [PDF]
Advanced Materials Technologies, 2021 AbstractThe design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work, a Faraday cage‐based oblique angle etch method is applied to fabricate various functional photonic devices from 4H Silicon Carbide (SiC)—a material ...
Otto Cranwell Schaeper +6 more
openaire +3 more sources
Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser
Crystals, 2022 The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time.
Hanwen Wang +6 more
doaj +1 more source
Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]
, 2016 This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
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Design Considerations for 4H-SiC Lateral BJTs for High Temperature Logic Applications
IEEE Journal of the Electron Devices Society, 2018 4H-silicon carbide (SiC)-based bipolar integrated circuits (ICs) are suitable alternatives to silicon (Si)-based ICs in high temperature applications, owing to superior properties of 4H-SiC and the robust performance of SiC bipolar junction transistors ...
Amna Siddiqui +2 more
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Micromachines, 2023 Although many refractory metals have been investigated as the choice of contact metal in 4H-SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for harsh environment applications has not been investigated adequately ...
Krishna C. Mandal +2 more
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, 2022 Boron carbide in its rhombohedral form (r-BxC), commonly denoted B4C or B13C2, is a well-known hard material, but it is also a potential semiconductor material.
Högberg, Hans +11 more
core +1 more source