Results 51 to 60 of about 702 (151)
Advanced Science, EarlyView.This schematic presents a biomimetic C‐SiC fibrous aerogel inspired by the special structure of momordica charantia. It exhibits outstanding thermal insulation and ultrahigh specific electromagnetic shielding performance, together with excellent high‐temperature stability and mechanical flexibility, showing great promise for aerospace applications ...
Tianyue Yang +9 more
wiley +1 more source
IEEE Journal of the Electron Devices SocietyThe operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can overcome limitations in complicated circuit design and power ...
Vuong Van Cuong +5 more
doaj +1 more source
Characterization of Nitrogen-Boron doped 4H-SiC substrates
International Journal of Electrochemical Science, 2013 Nitrogen-Boron doped 4H-SiC single crystal was prepared by physical vapor transport method and the doping concentration was determined by secondary ion mass spectroscopy. The resistivity of 4H-SiC substrate was measured by contactless method.
Rusheng Wei +7 more
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Advanced Science, EarlyView.A high‐strength lightweight refractory high‐entropy alloy achieves extraordinary ductility owing to the introduction of coherent chemically gradient ordered nanodomains (CGONs). The CGONs not only serve as effective barriers to dislocation motion (strengthening) but also significantly promote dislocation nucleation and multiplication (ductilizing) upon
Wei Zhang +3 more
wiley +1 more source
Advanced Science, EarlyView.By altering surface chemical bonds to prolong relaxation time and shift absorption to lower frequencies, SiC/rare earth–sulfur (RE─S, RE = La, Ce, Pr, Sm, Gd, Er) materials achieve excellent low‐frequency electromagnetic wave absorption under extreme conditions, offering a new direction for designing high‐performance SiC‐based absorbers.
Zhanming Wu +5 more
wiley +1 more source
Effect of surface roughness on the nucleation of diamond on a 4H-SiC substrate
Functional DiamondDiamond has the highest thermal conductivity among all materials and can be applied to overcome the heat dissipation problem in radio frequency devices based on the heterojunction of gallium nitride (GaN) and 4H silicon carbide (4H-SiC). However, growing
Hanchang Hu +5 more
doaj +1 more source
Advanced Science, EarlyView.Confined diffusion‐driven interfacial engineering enables the nanoscale construction of asymmetric SiC@C Janus hollow nanoshells, achieving synergistic impedance matching and electromagnetic energy dissipation for highly efficient broadband microwave absorption at ultralow filler loading.
Limeng Song +17 more
wiley +1 more source
Investigation into electrochemical oxidation behavior of 4H-SiC with varying anodizing conditions
Electrochemistry Communications, 2019 Electrochemical-assisted hybrid machining has been widely utilized for processing of single crystal SiC, which is a very promising next-generation semiconductor material for high power, high frequency and high temperature applications.
Zhaojie Chen, Yonghua Zhao
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Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices
Micromachines, 2020 Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article.
Krishna C. Mandal +2 more
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2008 Abstract Silicon carbide offers unique applications as a wide bandgap semiconductor. This paper reviews various aspects of ion implantation in 4H–SiC studied with a view to optimise ion implantation in silicon carbide. Al, P and Si ions with keV energies were used.
Wong-Leung, Jennifer +7 more
openaire +2 more sources