Results 51 to 60 of about 240,009 (234)
Advanced Science, EarlyView.By altering surface chemical bonds to prolong relaxation time and shift absorption to lower frequencies, SiC/rare earth–sulfur (RE─S, RE = La, Ce, Pr, Sm, Gd, Er) materials achieve excellent low‐frequency electromagnetic wave absorption under extreme conditions, offering a new direction for designing high‐performance SiC‐based absorbers.
Zhanming Wu +5 more
wiley +1 more source
Advanced Science, EarlyView.Confined diffusion‐driven interfacial engineering enables the nanoscale construction of asymmetric SiC@C Janus hollow nanoshells, achieving synergistic impedance matching and electromagnetic energy dissipation for highly efficient broadband microwave absorption at ultralow filler loading.
Limeng Song +17 more
wiley +1 more source
Graphitization effects induced by thermal treatments of 4H-SiC
, 2023 4H-SiC is one of the most promising indirect wide-bandgap (3.3 eV) semiconductor for power devices used in the emerging area of high-voltage and high-temperature electronics as well as space and radiation harsh environments applications.
Salvatore Patanè +8 more
core
Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing
, 2022 This paper discusses a novel annealing technique for 4H-SiC implants which involves the use of pulsed XeCl laser (λ=308 nm). In particular, an absorbing graphitic coating is used to protect the sample from surface atoms desorption or phase separation ...
Privitera S. +6 more
core +1 more source
Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps
Crystals, 2023 In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels.
Ning Guo +7 more
doaj +1 more source
Design Rules for Quantitative Control of Intragrain Planar Defects in Halide Perovskites
Advanced Science, EarlyView.Dose‐budgeted electron microscopy reveals the design rules governing intragrain planar defects in halide perovskites: {112}t ferroelastic twins proliferate with increasing tetragonality and grain size, whereas {111}c twins and stacking faults emerge as the lattice approaches cubic symmetry.
Byeongjun Gil +3 more
wiley +1 more source
Applications of 4H Silicon Carbide Radiation Detectors in Fission and Fusion Reactor Environments [PDF]
EPJ Web of ConferencesSemiconductor radiation detectors based on the 4H polytype of Silicon Carbide (4H-SiC) have many advantages for high-temperature, high-radiation and mixed-radiation applications.
Ruddy Frank H. +5 more
doaj +1 more source
Surface defects in 4H-SiC homoepitaxial layers
Nanotechnology and Precision Engineering, 2020 Although a high-quality homoepitaxial layer of 4H‑silicon carbide (4H-SiC) can be obtained on a 4° off-axis substrate using chemical vapor deposition, the reduction of defects is still a focus of research.
Lixia Zhao
doaj +1 more source
Advanced Science, EarlyView.This study unveils a microstructural‐compatibility design strategy that integrates reactive melt infiltration with plasma spraying to fabricate carbon fiber‐reinforced ZrC‐SiC composites. The deliberate incorporation of SiC into the ZrC coating releases heat accumulation, suppresses detrimental lamellar ZrO2 formation, and reduces residual stress. This
Hongkang Ou +6 more
wiley +1 more source
Advanced Science, EarlyView.Launching structures for in‐plane hyperbolic polaritons in α‐MoO3 are optically programmed through already deposited flakes into the phase‐change material In3SbTe2. Precise alignment with the flake's crystal axes, focusing of polaritons by an optically programmed disk, and a first experimental realization toward a nanocavity for in‐plane hyperbolic ...
Lina Jäckering +10 more
wiley +1 more source