Results 51 to 60 of about 181,039 (244)

A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide

, 2012
The influence of polymorphism on nanometric machinability of single crystal silicon carbide (SiC) has been investigated through molecular dynamics (MD) simulation. The simulation results are compared with silicon as a reference material.
Reuben, Robert L, Reuben, Robert Lewis, Goel, Saurav, Luo, Xichun, Reuben, Robert L.   +4 more
core   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

Experimental Investigation of Piezoresistive Effect in p-type 4H-SiC

, 2017
This letter presents for the first time the piezoresistive effect in p-type 4H-SiC. Longitudinal and transverse p-type 4H-SiC piezoresistors with a doping concentration of 1018cm3 were fabricated along [1100] directions.
Nguyen, Nam-Trung, Abu Riduan Md Foisal, Phan, Hoang Phuong, Dimitrijev, Sima, Foisal, Abu Riduan Md, Dao, Dzung, Dinh, Toan, Jisheng Han, Nam-Trung Nguyen, Nguyen, Tuan-Khoa, Nguyen Tuan, Khoa, Zhu, Yong, Sima Dimitrijev, Tanner, Philip, Tuan-Khoa Nguyen, Dao, Dzung Viet, Han, Jisheng, Md Foisal, AR, Dzung Viet Dao, Hoang-Phuong Phan, Phan, Hoang-Phuong, Yong Zhu, Toan Dinh, Philip Tanner   +23 more
core   +1 more source

Anisotropic hole drift velocity in 4H-SiC [PDF]

Materials Science and Engineering: B, 2019
A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on a nonlinear quantum kinetic theory which provides a clear description of the dissipative phenomena that are evolving in the system.
Vasconcelos, Jackelinne L., Rodrigues, Clóves Gonçalves, Luzzi, Roberto   +2 more
openaire   +2 more sources

Tailoring Phonon‐Driven Responses in α‐MoO3 through Isotopic Enrichment

Advanced Materials, EarlyView.
ABSTRACT The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material, α‐MoO3, an orthorhombic crystal boasting three distinct phonon dispersions, provides three polaritonic dispersions of hyperbolic phonon polaritons (HPhPs) across the ...
Thiago S. Arnaud, Ryan W. Spangler, Johnathan D. Georgaras, Jonah B. Haber, Daniel Hirt, Maximilian Obst, Gonzalo Álvarez‐Pérez, Mackey Long III, Felix G. Kaps, Jakob Wetzel, Courtney Ragle, John E. Buchner, Youngji Kim, Aditha S. Senarath, Richarda Niemann, Mingze He, Giulia Carini, Unai Arregui‐Leon, Akash C. Behera, Ramachandra Bangari, Nihar Sahoo, Niels C. Brumby, J. Michael Klopf, Martin Wolf, Lukas M. Eng, Susanne C. Kehr, Thomas G. Folland, Alexander Paarmann, Patrick E. Hopkins, Felipe Jornada, Jon‐Paul Maria, Joshua D. Caldwell   +31 more
wiley   +1 more source

Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps

Crystals, 2023
In this study, we used a horizontal hot-wall CVD epitaxy apparatus to grow epitaxial layers on 4° off-axis 4H-SiC substrates. Epitaxial films were grown by adjusting the flow rate of the source gas at different levels.
Ning Guo, Yicheng Pei, Weilong Yuan, Yunkai Li, Siqi Zhao, Shangyu Yang, Yang Zhang, Xingfang Liu   +7 more
doaj   +1 more source

Hydrogen (H2) Recovery From Hydrogen Sulfide (H2S): Current Technologies, Challenges, and Future Outlook

Advanced Science, EarlyView.
ABSTRACT Hydrogen sulfide (H2S) can be transformed into hydrogen (H2) through several chemical and catalytic processes, offering a promising route for both waste treatment and clean H2 production. This colorless, flammable, and toxic gas is found abundantly in swamps, volcanoes, hot springs, sewages, other natural gas fields, and even in refineries and
Divyesh Cirikonda, Astrid Campos‐Mata, Sehmus Ozden, Shreyasi Chattopadhyay, Pulickel M. Ajayan   +4 more
wiley   +1 more source

Oxidation removal mechanism based on ReaxFF-MD in 4H-SiC CMP

Jin'gangshi yu moliao moju gongcheng
ObjectivesSilicon carbide has the advantages of high temperature stability, high electron mobility, and wide bandgap, and has been widely used in fields such as new energy vehicles, photovoltaics, and integrated circuits.
Tianyu ZHANG, Zirui WANG, Rui ZHU, Yang PENG, Yuguang ZHU, Shengjie YOU, Yongguang WANG, Chuanyang WANG   +7 more
doaj   +1 more source

Applications of 4H Silicon Carbide Radiation Detectors in Fission and Fusion Reactor Environments [PDF]

EPJ Web of Conferences
Semiconductor radiation detectors based on the 4H polytype of Silicon Carbide (4H-SiC) have many advantages for high-temperature, high-radiation and mixed-radiation applications.
Ruddy Frank H., Lyoussi Abdallah, Destouches Christophe, Ottaviani Laurent, Reynard-Carette Christelle, Llido Olivier   +5 more
doaj   +1 more source

Electronic Structure and High Magnetic Properties of (Cr, Co)-codoped 4H–SiC Studied by First-Principle Calculations

Crystals, 2020
The electronic structure and magnetic properties of 3d transition metal (Cr, Co)-codoped 4H–SiC were studied by density functional theory within GGA methods.
Mengyu Zhang, Jingtao Huang, Xiao Liu, Long Lin, Hualong Tao   +4 more
doaj   +1 more source