Results 71 to 80 of about 240,009 (234)

Effect of surface roughness on the nucleation of diamond on a 4H-SiC substrate

Functional Diamond
Diamond has the highest thermal conductivity among all materials and can be applied to overcome the heat dissipation problem in radio frequency devices based on the heterojunction of gallium nitride (GaN) and 4H silicon carbide (4H-SiC). However, growing
Hanchang Hu, Yuhao Zheng, Pan Deng, Tianqi Deng, Deren Yang, Xiaodong Pi   +5 more
doaj   +1 more source

Synergistic Modulation of Conductivity and Oxidation Stability in SiHfBCN Ceramics via UV‐Assisted Structural Evolution

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
A quinary UV‐curable SiHfBCN ceramic photoresist with high ceramic yield enhanced is developed through sequential molecular design for high‐temperature sensing coatings. The elevated interconnected conductive network induced by chemically bonded carboxylated MWCNTs enables the pyrolyzed ceramics' enhanced conductivity and excellent oxidation stability.
Xiyue Zhu, Mingshuo Zhang, Jun Chen, Chen Hu, Jinshuo Zhang, Xin Liu, Xichao Dong, Laifei Cheng, Xingang Luan   +8 more
wiley   +1 more source

Characterization of Dislocations in 4H-SiC

Engineering Chemistry
Accurate characterization of dislocations is crucial for optimizing the performance of SiC-based power devices. The traditional way to measure dislocation density in SiC industry is KOH etching, a destructive approach that makes the wafer no longer available for epitaxial growth.
Hong Yu Peng, Can Zhu, Chao Gao
openaire   +1 more source

Investigation into electrochemical oxidation behavior of 4H-SiC with varying anodizing conditions

Electrochemistry Communications, 2019
Electrochemical-assisted hybrid machining has been widely utilized for processing of single crystal SiC, which is a very promising next-generation semiconductor material for high power, high frequency and high temperature applications.
Zhaojie Chen, Yonghua Zhao
doaj   +1 more source

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Micromachines, 2020
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article.
Krishna C. Mandal, Joshua W. Kleppinger, Sandeep K. Chaudhuri   +2 more
doaj   +1 more source

Anode/Electrolyte Interfacial Engineering Toward Sustainable and Practical Solid‐State Metal‐Sulfur Batteries: A Prospective Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Coordinated engineering of the anode, electrolyte, and interface underpins the rational design of next‐generation solid‐state metal‐sulfur batteries. Solid‐state metal‐sulfur batteries are emerging as a transformative energy storage platform with the potential to overcome the fundamental limitations of conventional flooded cells, particularly ...
Ziyu Feng, Hong Zhang, Peng Wang, Ke Lu, Fei Du   +4 more
wiley   +1 more source

Ion implantation in 4H–SiC

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2008
Abstract Silicon carbide offers unique applications as a wide bandgap semiconductor. This paper reviews various aspects of ion implantation in 4H–SiC studied with a view to optimise ion implantation in silicon carbide. Al, P and Si ions with keV energies were used.
Wong-Leung, Jennifer, Janson, M S, Kuznetsov, A Yu, Svensson, Bengt Gunnar, Linnarsson, M K, Hallen, A, Jagadish, Chennupati, Cockayne, David John Hugh   +7 more
openaire   +2 more sources

ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices

Electron, EarlyView.
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker, Adrien Baillard, Estelle Appert, Vincent Consonni   +3 more
wiley   +1 more source

Enhancing Electrical and Interfacial Properties of BeO/4H‐SiC Structures with SiO2 Interlayer

Advanced Electronic Materials
Beryllium oxide (BeO) has exceptionally high thermal conductivity (330 W m−1·K−1), a large bandgap energy, and a high dielectric constant, making it an optimal dielectric for high‐power devices.
Sangoh Han, Dohwan Jung, Jonghyun Bae, Juyoung Chae, Haekyun Bong, Prakash R. Sultane, Christopher W. Bielawski, Jungwoo Oh   +7 more
doaj   +1 more source

Self‐Supported SiC@Graphene Porous Array Electrodes for Ultrastable Supercapacitors

Electron, EarlyView.
Self‐supported SiC–graphene porous array electrodes are fabricated through a novel steam‐assisted etching and in situ pyrolysis strategy. They deliver a high energy density of 4.9 μWh cm−2 at 150°C with 89.55% capacitance retention over 10,000 cycles, presenting a new approach for high‐temperature supercapacitors.
Jiaqi Jiang, Qiang Dong, Xiaocheng Jiang, Lin Xu, Jianfei Wang, Wancheng Yu, Huaying Ren, Shouzhi Wang, Xuejian Xie, Xianglong Yang, Xiufang Chen, Xiangang Xu   +11 more
wiley   +1 more source