Results 71 to 80 of about 702 (151)

Self‐Supported SiC@Graphene Porous Array Electrodes for Ultrastable Supercapacitors

Electron, EarlyView.
Self‐supported SiC–graphene porous array electrodes are fabricated through a novel steam‐assisted etching and in situ pyrolysis strategy. They deliver a high energy density of 4.9 μWh cm−2 at 150°C with 89.55% capacitance retention over 10,000 cycles, presenting a new approach for high‐temperature supercapacitors.
Jiaqi Jiang, Qiang Dong, Xiaocheng Jiang, Lin Xu, Jianfei Wang, Wancheng Yu, Huaying Ren, Shouzhi Wang, Xuejian Xie, Xianglong Yang, Xiufang Chen, Xiangang Xu   +11 more
wiley   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Investigation of Nanocutting Characteristics of Off-Axis 4H-SiC Substrate by Molecular Dynamics

Applied Sciences, 2018
Silicon carbide (SiC), especially 4H-SiC, is an ideal semiconductor in power electronics due to its outstanding electrical and thermal properties. It has high hardness and brittleness, which makes it difficult to machine.
Miaocao Wang, Fulong Zhu, Yixin Xu, Sheng Liu   +3 more
doaj   +1 more source

Exploring the Landscape of MgO Polymorphs: Stability and the Electronic Band Gap of Promising Candidates

Zeitschrift für anorganische und allgemeine Chemie, EarlyView.
In this study, we have investigated possible predicted polymorphs of magnesium oxide (MgO) with respect to their thermodynamic and kinetic stability, as well as their electronic properties, focusing on the possibility of tuning the band gap of the material.
D. Zagorac, J. Zagorac, D. Fischer, T. Škundrić, J. C. Schön   +4 more
wiley   +1 more source

In operando imaging of the space‐charge region in a 4H‐SiC MOSCAP using STEM‐EBIC

Journal of Microscopy, EarlyView.
Abstract In situ biasing electron microscopy is the necessary step forward in being able to characterise nanoscale devices and device interfaces. STEM‐EBIC is a new approach that can help fill the missing gaps in creating reproducible methodologies for in situ biasing TEM.
Eoin Moynihan, Arne Renz, Akif Yildirim, Peter Gammon, Richard Beanland, Ana M. Sanchez   +5 more
wiley   +1 more source

Syntaxin 12 Sustains Endosomal‐Lysosomal Homeostasis and Survival in Glioblastoma Stem‐Like Cells

Traffic, Volume 27, Issue 3, September 2026.
Syntaxin12 maintains endolysosomal trafficking and lysosomal homeostasis in glioblastoma cells. Syntaxin12 depletion disrupts lysosomal organization, impairs endolysosomal progression and mTOR‐lysosome communication, and compromises adaptive pathways required for cell survival. ABSTRACT Glioblastoma cells display a striking vulnerability to disruptions
Clément Maghe, Agnieszka Barbach, Gwennan André‐Grégoire, Clotilde C. N. Renaud, Margaux Le Guyon, Rosalie Moreau, Nicolas Bidère, Julie Gavard   +7 more
wiley   +1 more source

Characterization of Aluminized Layers on Inconel‐738 Alloy: Microstructure, Modeling of Aluminizing Kinetics, and Thermal Behavior

Advanced Engineering Materials, Volume 28, Issue 15, 5 August 2026.
This study explored how effective nickel aluminide coatings are obtained in providing oxidation resistance applied to the Inconel 738 alloy, modeling with diffusion models. In the present study, kinetics and thermal behavior of the Inconel 738 alloy were studied by the low‐temperature thermoreactive aluminizing process, which was carried out at 625°C ...
Gozde Celebi Efe, Tuba Yener, Suayb Cagri Yener, Mourad Keddam, Cuma Bindal   +4 more
wiley   +1 more source

A Commercial-Simulator-Based Numerical-Analysis Methodology for 4H-SiC Power Devices Formed on Misoriented (0001) Substrates

IEEE Journal of the Electron Devices Society, 2015
A commercial-simulator-based numerical-analysis methodology for 4H-SiC power devices formed on misoriented (0001) substrates is proposed and applied for analyzing avalanche breakdown of floating-field-ring-terminated p-n diodes.
Kazuhiro Mochizuki, Hiroyuki Okino, Hiroyuki Matsushima, Renichi Yamada   +3 more
doaj   +1 more source

From Behavior to Dynamics: Decoding Carrier Roles in Cu‐based Photocathodes for Solar‐Driven CO2 Reduction

Advanced Materials, Volume 38, Issue 44, 7 August 2026.
The performance of Cu‐based photocathodes in photoelectrochemical CO2 reduction is not governed by catalytic sites alone, but by the dynamic journey of photogenerated carriers. This review decodes how carrier generation, recombination, transport, accumulation, extraction, and electrolyte coupling shape catalytic activity, selectivity, and stability ...
Yi‐Cheng Wang, Chenyu Xu, Peng‐Fei Sui, Yi Liu, Xiaolei Wang, Jing‐Li Luo   +5 more
wiley   +1 more source

Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region

APL Materials, 2013
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure.
E. Pitthan, L. D. Lopes, R. Palmieri, S. A. Corrêa, G. V. Soares, H. I. Boudinov, F. C. Stedile   +6 more
doaj   +1 more source