Results 61 to 70 of about 181,039 (244)
Advanced Dental Composite Technology via Bisilanized Dual‐Action Nanofillers for Biofilm Control
Advanced Science, EarlyView.A multimodal research strategy has led to the development of an innovative resin‐based composite (RBC) with dual antibacterial action. The S_CM‐RBC formula showed strong antibiofilm activity, excellent mechanical strength, and biosafety. It effectively controlled oral bacteria in prevention of caries recurrence, and maintained pulp health in a rat ...
Chenmin Yao +11 more
wiley +1 more source
Rejuvenated Amorphous Alloys: Processing Methods, Microstructures and Mechanical Properties
Advanced Science, EarlyView.Three rejuvenation methods – mechanical and thermal rejuvenation, and other rejuvenation routes such as ultrasonic processing – can be used to modify structures of glassy alloys, especially atomic clusters, and therefore enhances plasticity and activates work‐hardening behaviors.
Can Yang +10 more
wiley +1 more source
Journal of Telecommunications and Information Technology, 2000 Silicon carbide (SiC) power devices offer significant benefits of improved efficiency, dynamic performance and reliability of electronic and electric systems.
Mietek Bakowski
doaj +1 more source
Surface defects in 4H-SiC homoepitaxial layers
Nanotechnology and Precision Engineering, 2020 Although a high-quality homoepitaxial layer of 4H‑silicon carbide (4H-SiC) can be obtained on a 4° off-axis substrate using chemical vapor deposition, the reduction of defects is still a focus of research.
Lixia Zhao
doaj +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.First integration of ZnO nanorods with aerosol‐printed 3D Ag meshes for UV photodetector. 3D Ag/ZnO enhances light absorption and charge separation by providing a large active surface area for efficient charge generation and a strong UV response.
Elius Hossain +3 more
wiley +1 more source
Characterization of Nitrogen-Boron doped 4H-SiC substrates
International Journal of Electrochemical Science, 2013 Nitrogen-Boron doped 4H-SiC single crystal was prepared by physical vapor transport method and the doping concentration was determined by secondary ion mass spectroscopy. The resistivity of 4H-SiC substrate was measured by contactless method.
Rusheng Wei +7 more
doaj +1 more source
Utilizing large hall offset voltage for conversion free 4H-SiC strain sensor
, 2018 This work presents a conversion free p-type 4H silicon carbide (4H-SiC) four-terminal strain sensor utilizing a large Hall offset voltage in a symmetric four-terminal configuration.
Nguyen, Nam-Trung +20 more
core +1 more source
, 2023 77824H-silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles.
Schraml, Michael +4 more
core +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.A quinary UV‐curable SiHfBCN ceramic photoresist with high ceramic yield enhanced is developed through sequential molecular design for high‐temperature sensing coatings. The elevated interconnected conductive network induced by chemically bonded carboxylated MWCNTs enables the pyrolyzed ceramics' enhanced conductivity and excellent oxidation stability.
Xiyue Zhu +8 more
wiley +1 more source
IEEE Journal of the Electron Devices SocietyThe operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can overcome limitations in complicated circuit design and power ...
Vuong Van Cuong +5 more
doaj +1 more source