Results 61 to 70 of about 240,009 (234)

Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures [PDF]

, 2018
The slow etching rate of conventional micro-machining processes is hindering the use of bulk silicon carbide materials in pressure sensing. This paper presents a 4H-SiC piezoresistive pressure sensor utilising a laser scribing approach for fast ...
Nguyen, Nam-Trung, Dowling, Karen M., Foisal, Abu Riduan Md, Dao, Dzung Viet, Dinh, Toan, Phan, Hoang-Phuong, Nguyen, Tuan-Khoa, Senesky, Debbie G.   +7 more
core   +1 more source

Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications

IEEE Journal of the Electron Devices Society
The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can overcome limitations in complicated circuit design and power ...
Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki   +5 more
doaj   +1 more source

Roadmap for SiC power devices

Journal of Telecommunications and Information Technology, 2000
Silicon carbide (SiC) power devices offer significant benefits of improved efficiency, dynamic performance and reliability of electronic and electric systems.
Mietek Bakowski
doaj   +1 more source

Electronic Structure and High Magnetic Properties of (Cr, Co)-codoped 4H–SiC Studied by First-Principle Calculations

Crystals, 2020
The electronic structure and magnetic properties of 3d transition metal (Cr, Co)-codoped 4H–SiC were studied by density functional theory within GGA methods.
Mengyu Zhang, Jingtao Huang, Xiao Liu, Long Lin, Hualong Tao   +4 more
doaj   +1 more source

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

Advanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte, Salvatore Ethan Panasci, Valerio Votadoro, Salvatore Di Franco, Marilena Vivona, Simone Milazzo, Marco Zignale, Filippo Giannazzo, Béla Pécz, Patrick Fiorenza   +9 more
wiley   +1 more source

Characterization of Nitrogen-Boron doped 4H-SiC substrates

International Journal of Electrochemical Science, 2013
Nitrogen-Boron doped 4H-SiC single crystal was prepared by physical vapor transport method and the doping concentration was determined by secondary ion mass spectroscopy. The resistivity of 4H-SiC substrate was measured by contactless method.
Rusheng Wei, Xiufang Chen, Lihuan Wang, Sheng Song, Kun Yang, Xiaobo Hu, Yan Peng, Xiangang Xu   +7 more
doaj   +1 more source

Revealing Hidden Raman Signatures Through Attention‐Based Spectral Unmixing

Advanced Intelligent Systems, EarlyView.
Weak Raman signatures are recovered from background‐dominated spectra using a transformer‐based, reference‐free spectral unmixing AI framework. Self‐attention reconstructs substrate contribution directly from mixed data, enabling reliable extraction of previously inaccessible vibrational features.
Dmitriy A. Poteryayev, Pietro Novelli, Annalisa Coriolano, Riccardo Dettori, Valentina Tozzini, Fabio Beltram, Massimiliano Pontil, Antonio Rossi, Stiven Forti, Camilla Coletti   +9 more
wiley   +1 more source

Anisotropic hole drift velocity in 4H-SiC [PDF]

Materials Science and Engineering: B, 2019
A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on a nonlinear quantum kinetic theory which provides a clear description of the dissipative phenomena that are evolving in the system.
Vasconcelos, Jackelinne L., Rodrigues, Clóves Gonçalves, Luzzi, Roberto   +2 more
openaire   +2 more sources

Multidimensional Engineering Enabling Rate‐Matched C−N Coupling for Efficient Organonitrogen Electrosynthesis

EcoEnergy, EarlyView.
This review introduces rate matching as a unifying design principle for efficient electrochemical C−N coupling and highlights multidimensional engineering of catalysts, interfaces, and reactors to synchronize the generation of carbon‐ and nitrogen‐containing intermediates, balance their surface coverages, maximize C−N bond formation, and enable ...
Kaixing Cai, Chunyang Pu, Jun Yang, Guangqin Li, Jiahui Xian   +4 more
wiley   +1 more source

Experimental Investigation of Piezoresistive Effect in p-type 4H-SiC

, 2017
This letter presents for the first time the piezoresistive effect in p-type 4H-SiC. Longitudinal and transverse p-type 4H-SiC piezoresistors with a doping concentration of 1018cm3 were fabricated along [1100] directions.
Nguyen, Nam-Trung, Abu Riduan Md Foisal, Phan, Hoang Phuong, Dimitrijev, Sima, Foisal, Abu Riduan Md, Dao, Dzung, Dinh, Toan, Jisheng Han, Nam-Trung Nguyen, Nguyen, Tuan-Khoa, Nguyen Tuan, Khoa, Zhu, Yong, Sima Dimitrijev, Tanner, Philip, Tuan-Khoa Nguyen, Dao, Dzung Viet, Han, Jisheng, Md Foisal, AR, Dzung Viet Dao, Hoang-Phuong Phan, Phan, Hoang-Phuong, Yong Zhu, Toan Dinh, Philip Tanner   +23 more
core   +1 more source