Results 81 to 90 of about 240,009 (234)

Interface Engineering in Piezoelectric‐on‐Insulator Platforms: Coupling of Electrons, Photons, and Phonons for Multifunctional Integration

Electron, EarlyView.
The underlying interface physics and engineering strategies across key POI material systems, including LiNbO3/Si, LiNbO3/SiC, LiNbO3/diamond, and AlN/diamond, were reviewed. The key engineering strategies such as atomic‐scale bonding optimization, nanostructuring, ultrathin phonon‐bridge interlayers, and ferroelectric domain wall engineering for ...
Yunjia Bao, Zhiqiang Wang, Rongbang Yang, Gongbin Tang, Ruiqiang Guo, Kunfeng Chen, Wen Hu   +6 more
wiley   +1 more source

Response of epitaxial layer of 4H-SiC to β-rays and X-rays irradiation

, 2023
4H-SiC is one of the most promising indirect wide-bandgap (3.3 eV) semiconductor for power devices used in the emerging area of high-voltage and high-temperature electronics as well as space and radiation harsh environments applications.
Antonino Alessi, Fabio Principato, Sylvain Girard, Alice Lombardo, Adriana Morana, Andrea Brischetto, Simonpietro Agnello, Marco Cannas, Franco M. Gelardi, Daniele Vecchio, Francesca Migliore   +10 more
core  

/4H–SiC Interface [PDF]

, 2019
We have studied the carbon vacancy in bulk 4H‐SiC and in the vicinity of an SiO /(0001)‐4H‐SiC interface using density functional theory. We find that migration is hindered in the immediate vicinity of the interface, with the energy barrier for diffusion
Alton B. Horsfall, Mark Rayson, Hind Alsnani, Goss, J.P., Alsnani, Hind, Patrick Briddon, Jonathan P. Goss, Briddon, P.R., Rayson, M.J., Horsfall, A.B.   +9 more
core   +1 more source

Corrosion of Potential Canister Materials During Oxic to Anoxic Transient in Compacted Bentonite

Materials and Corrosion, EarlyView.
A comprehensive analytical approach was applied to investigate material degradation phenomena of cast iron and copper as potential canister materials for the safe disposal of high‐level radioactive waste, as well as compacted bentonite exposed to artificial water relevant for disposal. ABSTRACT The long‐term performance of the engineered barrier system
Louisa Panjiyar, Martin Ende, Nicolas Finck, Christiane Stephan‐Scherb   +3 more
wiley   +1 more source

Utilizing large hall offset voltage for conversion free 4H-SiC strain sensor

, 2018
This work presents a conversion free p-type 4H silicon carbide (4H-SiC) four-terminal strain sensor utilizing a large Hall offset voltage in a symmetric four-terminal configuration.
Nguyen, Nam-Trung, Phan, Hoang Phuong, Foisal, Abu Riduan Md, Dinh, Toan, Jisheng Han, Han, Ji-Sheng, Nam-Trung Nguyen, Nguyen, Tuan-Khoa, Md Foisal, Abu, Nguyen Tuan, Khoa, Zhu, Yong, Abu Riduan MdFoisal, Tuan-Khoa Nguyen, Dao, Dzung Viet, Dzung Viet Dao, Han, Jisheng, Hoang-Phuong Phan, Phan, Hoang-Phuong, Yong Zhu, Dao, Dung, Toan Dinh   +20 more
core   +1 more source

Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters

, 2023
77824H-silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles.
Schraml, Michael, Weiss, Tilman, Papathanasiou, Niklas, May, Alexander, Erlbacher, Tobias   +4 more
core   +1 more source

Construction optimization and functional applications of fluorescent nanodiamonds

Responsive Materials, EarlyView.
This review summarizes synthesis, surface modification and optical properties of fluorescent nanodiamonds. Their advances in quantum sensing, single‐photon emission and biomedicine are discussed, and existing challenges and future directions are presented.
Yunpeng Yang, Sen Zhang, Chao Chen, Wensi Yang, Zuanquan Chen, Rui Fan, Linlin Liu, Benjian Liu, Kang Liu, Zhibo Zhang, Bing Dai, Jiaqi Zhu   +11 more
wiley   +1 more source

Microscopic Stress Analysis of Silicon Carbide Devices Under Overcurrent Conditions in DC Solid‐State Circuit Breakers

IET Smart Energy Systems, EarlyView.
A coupled Saber–TCAD–thermo‐mechanical simulation framework is proposed to evaluate microscopic stresses in SiC MOSFETs under overcurrent operation. Ultrahigh gate‐voltage driving reduces thermal and mechanical stress but increases gate oxide electric‐field stress, revealing a reliability tradeoff for DC solid‐state circuit breakers.
Bin Yu, Jiawei Qin, Liang Chen, Zehua Dai   +3 more
wiley   +1 more source

Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces [Elektronisk resurs]

Modest channel carrier mobility in SiC-MOSFETs with NO annealed gate oxides has been the main factor hampering development of low power devices (300 – 650 V).
Persson, A. R., Sveinbjornsson, E. O.,, Haasmann, Daniel,, Darakchieva, Vanya,, Hassan, J.,, Haasmann, D, Chen, J. T.,, Haasmann, D., Chen, JT, Darakchieva, V, Vidarsson, A. M., Persson, A. R.,, Vidarsson, AM, Rorsman, Niklas,, Dimitrijev, S, Persson, AR, Darakchieva, V., Hassan, J., Rorsman, N, Sveinbjörnsson, E, Chen, J. T., Hassan, J, Dimitrijev, S., Vidarsson, Arnar M.,, Sveinbjörnsson, E., Rorsman, N., Dimitrijev, Sima,   +26 more
core   +1 more source

High-temperature tolerance of the piezoresistive effect in p-4H-SiC for harsh environment sensing

, 2018
4H-silicon carbide based sensors are promising candidates for replacing prevalent silicon-based counterparts in harsh environments owing to their superior chemical inertness, high stability and reliability.
Nguyen, Nam-Trung, Foisal, Abu Riduan Md, Dao, Dzung, Dinh, Toan, Phan, Hoang-Phuong, Nguyen, Tuan-Khoa   +5 more
core   +1 more source