Results 101 to 110 of about 240,009 (234)
Zeitschrift für anorganische und allgemeine Chemie, Volume 652, Issue 14, 23 September 2026.In this study, we have investigated possible predicted polymorphs of magnesium oxide (MgO) with respect to their thermodynamic and kinetic stability, as well as their electronic properties, focusing on the possibility of tuning the band gap of the material.
D. Zagorac +4 more
wiley +1 more source
The Declining Trend of Arctic Sea‐Ice Extent (1979–2025): Segmented by Abrupt Change Points
Geophysical Research Letters, Volume 53, Issue 17, 16 September 2026.Abstract Arctic sea‐ice extent (SIE), a high‐accuracy observable, is a key indicator for assessing sea‐ice state and its physical evolution. Extreme SIE losses thus often spark debates over potential Arctic tipping behavior and nonlinear threshold responses.
Anliang Wang
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2015 A commercial-simulator-based numerical-analysis methodology for 4H-SiC power devices formed on misoriented (0001) substrates is proposed and applied for analyzing avalanche breakdown of floating-field-ring-terminated p-n diodes.
Kazuhiro Mochizuki +3 more
doaj +1 more source
, 2023 Silicon Carbide (SiC) is a wide-bandgap crystalline semiconductor with an indirect bandgap of 2.3-3.3 eV depending on polytype. 4H-SiC is a very promising semiconductor for high-power devices and high-temperature devices thanks to its superior physical ...
F. Principato +11 more
core
Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
APL Materials, 2013 In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure.
E. Pitthan +6 more
doaj +1 more source
Comparison of the effects of electrons and X-rays irradiation on epitaxial layers of 4H-SiC
, 2022 4H-SiC is one of the most promising indirect wide-bandgap (3.3 eV) semiconductor for high-power and high-temperature devices due to its high endurance and temperature resistance [1].
F. Principato +8 more
core
AIP AdvancesBy systematically varying the boron concentration near the oxide/4H–SiC interface within a specifically designed boron-diffusion layer oxide structure, this paper explores the influence of boron concentration on interface state density and near-interface
Runze Wang +3 more
doaj +1 more source
Improvement of 4H-SiC material quality
, 2015 The Fraunhofer IISB will introduce its activities in Silicon Carbide to the spintronic community with a special focus on its undertakings on material development and characterization. Our activities in materials development started about 10 years ago. We
Friedrich, Jochen +4 more
core +1 more source
CrystalsA comprehensive beyond density functional theory study of the structural, energetic, and electronic properties of the technologically most relevant SiC polytypes 3C, 2H, 4H, and 6H-SiC, together with the single Shockley-type stacking fault (1SSF or 31SSF)
Taswar Iqbal +7 more
doaj +1 more source
Second-Order Raman Scattering from n- and p-Type 4H-SiC
, 2004 The results of second-order Raman-scattering experiments on n- and p-type 4H-SiC are presented,covering the acoustic and the optical overtone spectral regions.Some of the observed structures in the spectra are assigned to particular phonon branches and ...
Wang Lei +6 more
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