Results 111 to 120 of about 240,009 (234)

Electrical properties and electroluminescence of 4H-SiC p-n junction diodes

, 2004
Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal air-cooled quartz tube at around 1500 ...
Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn, Sun, GS, Wang, L, Zhao, WS, Zhang, YX, Li, JM, Zeng, YP, Gao, X   +7 more
core  

TCAD simulations of radiation damage in 4H-SiC

Microelectronic Engineering
4 pages, 4 ...
Burin, Jürgen, Hahn, Christopher, Gaggl, Philipp, Gsponer, Andreas, Waid, Simon, Bergauer, Thomas   +5 more
openaire   +2 more sources

Angular-Response Balancing in 4H-SiC Diffractive Waveguides Using Oppositely Oriented Slanted Gratings

Crystals
High-index 4H-silicon carbide (4H-SiC) provides a larger waveguide k-space than conventional glass and is therefore attractive for wide field-of-view (FOV) diffractive augmented reality waveguides.
Shiyang Hou, Runsheng Zheng, Chenghang Yang, Xiaoqing Liu, Yangyang Liang, Qingbo Li   +5 more
doaj   +1 more source

The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H-SiC Devices

Silicon carbide (SiC) has become one of the most promising materials in the field of power semiconductors in the last 20 years. Among the SiC polytypes, 4H-SiC is considered the suitable polytype for power electronic applications due to its large bandgap,
Xu, M, Zhong, Y, Luo, L, Zhang, R, Han, J, Xu, X, Cui, Y, Wang, T, Yuan, D, Linewih, H, Li, S, Cheong, KY   +11 more
core   +1 more source

Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions

Applied Physics Express
4H-SiC is a pivotal semiconductor for high-power, high-temperature devices, where Auger recombination significantly affects performance under high carrier injection. While previously studied in lightly doped material, data for heavily doped n-type 4H-SiC
Endong Zhang, Hiroko Matsuyama, Masashi Kato   +2 more
doaj   +1 more source

Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

, 2004
Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualitical 4H-SiC epilayers.Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1500℃ with a pressure of 1.3×103Pa by
Wang Lei, Li Jinmin, Zhao Wanshun, Sun Guosheng, Zhang Yongxing, Zeng Yiping, Gao Xin   +6 more
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Characteristics and behaviors analysis of etch pits in 4H-SiC epilayers by molten KOH etching

The etch rates of molten-alkali etching fluctuates among different types of 4H-SiC epilayers, due to Fermi levels variations. This inconsistency makes it challenging to identify dislocations based solely on etch pit shapes and sizes.
Xu, M, Huang, X, Han, J, Hou, X, Xu, X, Guo, L, Li, S, Qiu, Y   +7 more
core   +1 more source

Première séance du séminaire SIC, Université Lille 3, 27 mars 2015

, 2015
La première séance du séminaire SIC aura lieu le 27 mars 2015 de 9h30 à 17h45 à l'Université de Lille 3 (Campus Sciences humaines et sociales) dans la salle de séminaire de l'IRHiS (des panneaux vous indiqueront le chemin).
sic
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High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films

, 2011
4H-SiC-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors with thermally grown SiO2 and evaporated Al2O3/SiO2 (A/S) films are fabricated and demonstrated as normally-off and normally-on mode devices, respectively.
Zhengyun Wu, Wanshun Zhao, Dong, Lin, Zeng, Yiping, Wu, Zhengyun, Yiping Zeng, 吴正云, Zhang, F.(fzhang@semi.ac.cn), Xingfang Liu, Liu Zheng, Zhao, Wanshun, Sun, Guosheng, Liu, Xingfang, Feng Zhang, Lin Dong, Guosheng Sun, Lei Wang, Zheng, Liu, Huang, Huolin, Huolin Huang, Wang, Lei, Guoguo Yan, Zhang, Feng, Yan, Guoguo   +23 more
core  

Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC. [PDF]

Nanomaterials (Basel)
Galizia B, Schilirò E, Fiorenza P, Giannazzo F, Pecz B, Fogarassy Z, Roccaforte F, Lo Nigro R.   +7 more
europepmc   +1 more source