Results 131 to 140 of about 240,009 (234)

4H-SiC同质外延层中的扩展缺陷研究

, 2011
利用自主研发的热壁低压化学气相沉积(HWLPCVD)系统,在5.08 cm(2英寸)4°偏轴4H-SiC衬底上生长4H-SiC同质外延膜。讨论了4H-SiC同质外延层中的两种扩展缺陷---彗星缺陷和胡萝卜缺陷,研究了这两种缺陷的起源与消除方法。研究发现采用化学机械抛光(CMP)方法可以有效去除扩展缺陷,提高外延膜的质量。另外 ...
王雷, 刘兴昉, 郑柳, 闫果果, 董林, 赵万顺, 孙国胜, 吴海雷, 曾一平   +8 more
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Research on Diamond Nano-Grinding of 4H-SiC Crystals and Wear of Abrasives with Different Sharpness. [PDF]

Micromachines (Basel)
Wu L, Fan S, Li H, Han Z, Yang P, Zhao X, Pan J.   +6 more
europepmc   +1 more source

Deuxième séance du SIC "Santé, exclusion, citoyenneté", Lille, 17 avril 2015

, 2015
Le vendredi 17 avril prochain aura lieu la deuxième séance du SIC. Elle se déroulera à l'Université de Lille 3 dans la salle de séminaire de l'IRHiS de 13h15 à 17h45. Le programme est disponible ici: Programme Séminaire SIC 17 avril 2015. Cette séance se
sic
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Integration of LASER Diodes Emitting at Eight Different Wavelengths from Blue to Infrared on a 4H-SiC-Based Optical Integration Platform. [PDF]

Materials (Basel)
Wang X, Li X, Kang R, Jia W, Duan X, Yang R, Fan Z, Li Z, Zhou J, Zuo Z.   +9 more
europepmc   +1 more source

>10kV 4H-SiC n-IGBTs for elevated temperature environments

In this work we explore the appropriate design parameters which will enable the fabrication of a >10kVn-Channel IGBT. In particular, we emphasize the reduction of device blocking capabilities for high temperature environments.
Tiwari, Amit K., Antoniou, Marina, Arvanitopoulos, Anastasios, Udrea, Florin, Trajkovic, T., Perkins, Samuel, Lophitis, Neophytos   +6 more
core  

Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition

, 2006
Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature
Ning, J (Ning, Jin), Zeng, YP (Zeng, Yiping), Sun, GS (Sun, Guosheng), Liu, XF (Liu, Xingfang), Gong, QC (Gong, Quancheng), Gao, X (Gao, Xin), Wang, L (Wang, Lei), Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China., Li, JM (Li, Jinmin)   +8 more
core  

Dual-Stage Annealing for Enhanced Thulium Oxynitride Passivation on a 4H-SiC MOS Capacitor. [PDF]

ACS Omega
Deng J, Chen J, Quah HJ.
europepmc   +1 more source

First-Principles Study of Interfacial Properties and Fracture Behavior of (3C and 4H) SiC/Al Interfaces. [PDF]

Materials (Basel)
Zhang R, Zhong Y, Zhao K, Wang J, Si J, Wu Y, Zou C, Wang H, Wei Z.   +8 more
europepmc   +1 more source

Polarity Inversion-Driven Band Structure Modulation, Strain Engineering, and Electrical Property Analysis on GaN/4H-SiC Heterojunctions. [PDF]

ACS Omega
Yang J, Shi G, Yao L, Li Y, Du M, Cui S, Li P, Liu Y, Bi J, Wei H, Peng M, Zheng X.   +11 more
europepmc   +1 more source

Femtosecond Laser Stealth Slicing of 4H-SiC Wafers with Static Aspheric Aberration Correction. [PDF]

Materials (Basel)
Yang T, Wu R, Guo X, Chen T, Ming M.
europepmc   +1 more source