Modified divacancies in 4H-SiC
Modified divacancies in 4H-SiCDivacancies near or at lattice defects in SiC, the PL5?PL7 photoluminescence centers, are known to have more favorable optical and spin properties for applications in quantum technology compared to the usual divacancies. These centers were previously predicted to be divacancies near stacking faults. Using electron paramagnetic resonance, we observe PL5,
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Processing Characteristics of Ultra-Precision Cutting of 4H-SiC Wafers by Dicing Blade. [PDF]
Micromachines (Basel)Wang Y, Li Z, Chen F, Xu Z.
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On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs [PDF]
, 2007 Bonani, Fabrizio +7 more
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Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions. [PDF]
Micromachines (Basel)Huang X, Song Y, Zhong C, Wang Z.
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Optimization and experimental demonstration of mesh-patterned 4H-SiC betavoltaic cells for enhanced power density. [PDF]
Sci RepKim KM +5 more
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Application of UV Laser for Ohmic Contact Formation on 4H-SiC. [PDF]
Materials (Basel)Kubiak A +3 more
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DFT Investigation of PFOS Interaction with 4H-SiC: A Feasibility Study for Environmental Sensing Applications. [PDF]
ACS OmegaSookhak Lari K +5 more
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Study of n-Channel 4H-SiC MOSFETs with a High-<i>k</i>/SiO<sub>2</sub> Stacked Gate Dielectric and a p<sup>+</sup>-Polysilicon Gate. [PDF]
Micromachines (Basel)Lin Z, Cheng N, Cai W, Hu J, Hu S.
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Optimization and Simulation on Gas Flow and Temperature Fields on the Homoepitaxial Growth of N-Doped 4H-SiC Wafers. [PDF]
Micromachines (Basel)Zhang G, Li T, Liu Y, Sun J, Zhang S.
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Laser Processing of Ti Contacts for Ohmic Behavior on P‑Type 4H-SiC. [PDF]
ACS Appl Electron MaterVabres R +9 more
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