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Simple method for the growth of 4H silicon carbide on silicon substrate [PDF]
AIP Advances, 2016 In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat.
M. Asghar +6 more
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Spin-acoustic control of silicon vacancies in 4H silicon carbide
Nature Electronics, 2023 AbstractBulk acoustic resonators can be fabricated on the same substrate as other components and can operate at various frequencies with high quality factors. Mechanical dynamic metrology of these devices is challenging as the surface information available through laser Doppler vibrometry lacks information about the acoustic energy stored in the bulk ...
Jonathan R. Dietz +4 more
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4H silicon carbide bulk acoustic wave gyroscope with ultra-high Q-factor for on-chip inertial navigation [PDF]
Communications EngineeringInertial navigation on a chip has long been constrained by the noise and stability issues of micromechanical Coriolis gyroscopes, as silicon, the dominant material for microelectromechanical system devices, has reached the physical limits of its material
Zhenming Liu +4 more
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Recognition of dislocation structure of silicon carbide epitaxial layers by а neural network [PDF]
Компьютерная оптика, 2020 Technological features of the growth of single crystal silicon carbide inevitably create condi-tions for the formation of crystal structure defects in them.
A.V. Bragin +3 more
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Polarization and spatial mode dependent four-wave mixing in a 4H-silicon carbide microring resonator
APL Photonics, 2021 We report four-wave mixing with different polarization and spatial modes in a single 4H-silicon carbide photonic device. Our device shows great potential to perform high-dimensional multiplexing for optical communication and high-dimensional entanglement
Xiaodong Shi +8 more
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On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes [PDF]
IEEE Transactions on Industry Applications, 2019 Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next years, 3C-SiC devices can become a commercial reality.
Anastasios E. Arvanitopoulos +6 more
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Dislocation-related leakage-current paths of 4H silicon carbide
Frontiers in Materials, 2023 Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy.
Wandong Gao +13 more
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Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC
Crystals, 2021 Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carbide (
Ying Chang +8 more
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The Role of Aluminium in the Synthesis of Mesoporous 4H Silicon Carbide [PDF]
Materials Science Forum, 2015 Aluminium is found to play a key role in the process of forming a mechanically stable and highly porous and granular structure of 4H silicon carbide. The material is prepared by a high temperature reaction of the elemental constituents. The reactions are carried out under different background atmospheres, including nitrogen. Ternary carbides containing
Hvam, Jeanette +4 more
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Advanced Materials Interfaces, 2023 High‐efficiency and low‐loss processing is the mainstay to reduce the cost and deepen the application of 4H silicon carbide (4H‐SiC) wafers in high‐power and high‐frequency electronics.
Wenhao Geng +7 more
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