Results 1 to 10 of about 1,360,403 (285)

DC-DC Converter Design Issues for High-Efficient DC Microgrid

open access: yesCommunications, 2019
In this article, the electrical properties, as well as the economic aspects of the modular and non-modular solution of the DC-DC photovoltaic converter for DC microgrid subsystem, are described.
Michal Frivaldsky, Jan Morgos
doaj   +1 more source

Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates

open access: yes, 2011
We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450{\deg}C in vacuum to create epitaxial multilayer graphene (MLG).
Breslin, Christopher M.   +8 more
core   +1 more source

Long-term high-temperature aging mechanism of copper-metallized through-glass vias: a combined nanoindentation test and hybrid Potts-phase field simulation study

open access: yesMicrosystems & Nanoengineering
The reliability of through-glass via (TGV) interconnects is critical for advanced semiconductor packaging. This work investigates microstructural and mechanical evolution in electroplated TGV–Cu subjected to long-term aging at 250 °C.
Junwei Chen   +14 more
doaj   +1 more source

Machining parameter optimization of Al/SiC/Gr hybrid metal matrix composites using ANOVA and grey Relational analysis [PDF]

open access: yesFME Transactions, 2020
This research work focuses on the impact of graphite addition to the Al/SiC hybrid metal matrix composites manufactured by stir casting process. Three specimens were prepared with Al6061 alloy + 5 wt. % SiC and varying weight percent of graphite.
Elango Mallichetty   +1 more
doaj  

Hierarchical Coupling of Molecular Dynamics and Micromechanics to Predict the Elastic Properties of Three-Phase and Four-Phase Silicon Carbide Composites [PDF]

open access: yes
The results obtained from previously conducted molecular dynamics analysis of silicon carbide (-SiC (6H, 4H, & 2H-SiC), -SiC (3C SiC)), silicon and boron nitride, were utilized as inputs in the MAC/GMC micromechanics software to model and evaluate the ...
Aluko, Olanrewaju   +3 more
core   +1 more source

Building of super high-efficiency processing technology based on innovative concept (Establishment of effective polishing process of SiC substrate using Dilatancy pad tool with bowl feed method)

open access: yesNihon Kikai Gakkai ronbunshu, 2015
In this study, we propose innovative polishing method for hard-to-process semiconductor substrate such as SiC. Our innovative polishing method mainly consists of 2 technologies.
Toshiro K. DOI   +12 more
doaj   +1 more source

Experimental proposal for symmetric minimal two-qubit state tomography

open access: yes, 2012
We propose an experiment that realizes a symmetric informationally complete (SIC) probability-operator measurement (POM) in the four-dimensional Hilbert space of a qubit pair.
Englert, Berthold-Georg   +2 more
core   +1 more source

Design of a Customized Multipurpose Nano-Enabled Implantable System for In-Vivo Theranostics

open access: yesSensors, 2014
The first part of this paper reviews the current development and key issues on implantable multi-sensor devices for in vivo theranostics. Afterwards, the authors propose an innovative biomedical multisensory system for in vivo biomarker monitoring that ...
Esteve Juanola-Feliu   +5 more
doaj   +1 more source

Synergistic damage behavior of He ion irradiation and molten salt corrosion in SiC at 750 °C

open access: yesJournal of Advanced Ceramics
CVD SiC samples exposed to 400 keV He ion irradiation at 750 °C were subsequently corroded in FLiNaK molten salt at 750 °C for 166 h. After corrosion, the dissolution of Si led to the formation of a carbon-rich layer and obvious denudation of the SiC ...
Jianfeng Zhang   +6 more
doaj   +1 more source

Effect of processing on fracture toughness of silicon carbide as determined by Vickers indentations [PDF]

open access: yes
Several alpha-SiC materials were processed by hot isostatic pressing (HIPing) and by sintering an alpha-SiC powder containing boron and carbon. Several beta-SiC materials were processed by HIPing a beta-SiC powder with boron and carbon additions.
Dannels, Christine M., Dutta, Sunil
core   +1 more source

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