Piezoresistive effect of p-type single crystalline 3C-SiC on (111) plane [PDF]
This paper presents for the first time the effect of strain on the electrical conductivity of p-type single crystalline 3C-SiC grown on a Si (111) substrate.
Dao, Dzung Viet +3 more
core +2 more sources
Delivering diabetes education through nurseled telecoaching : cost-effectiveness analysis [PDF]
Background : People with diabetes have a high risk of developing micro-and macrovascular complications associated with diminished life expectancy and elevated treatment costs. Patient education programs can improve diabetes control in the short term, but
Aertgeerts, Bert +5 more
core +3 more sources
Si/SiC bonded wafer: a route to carbon free SiO2 on SiC [PDF]
This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor (MOS) devices with lower interface state densities (Dit ...
A. Pérez-Tomás +14 more
core +1 more source
Bacteria concentration and detection is time-consuming in regular microbiology procedures aimed to facilitate the detection and analysis of these cells at very low concentrations.
Cristina Páez-Avilés +7 more
doaj +1 more source
Psychosocial health care needs of people with type 2 diabetes in primary care: Views of patients and health care providers
Contains fulltext : 206249.pdf (Publisher’s version ) (Open Access)
Stoop, C.H. +4 more
openaire +1 more source
Diamond / SiC heterojunctions [PDF]
Diamond and SiC are wide bandgap (WBG) materials which can be used to fabricate high power devices with improved performance. The combination of these materials into one single device is expected to bring some benefits, like a better thermal management with a corresponding increase in the operating power.
Mukherjee, Debarati +4 more
openaire +3 more sources
Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires [PDF]
We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs).
Feng, X. L. +4 more
core +1 more source
We theoretically discuss the physical origin of the dielectric constants [{\epsilon}({\omega})] and second harmonic generation coefficients [\{chi}(2)({\omega})] of the ABA-stacked two-dimensional graphene-like silicon carbide (2D-SiC) with the number of
Lan, You-Zhao
core +1 more source
Thermoresistance of p-Type 4H–SiC Integrated MEMS Devices for High-Temperature Sensing [PDF]
There is an increasing demand for the development and integration of multifunctional sensing modules into power electronic devices that can operate in high temperature environments.
Dao, Dzung Viet +7 more
core +2 more sources
The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment [PDF]
Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated
Baker, G. W. C. +15 more
core +1 more source

