Results 21 to 30 of about 1,545 (184)
Machining Characteristics of Micro EDM of Silicon Carbide [PDF]
한국정밀공학회지Silicon carbide (SiC) is chemically stable, highly heat-resistant, and resistant to thermal shock. SiC having excellent characteristics in a high temperature and high voltage environment is used in high-power semiconductors, high-precision mechanical ...
Ju Hyeon Lee +2 more
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Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms
Advanced Photonics Research, 2021 4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important role in ...
Xiaodong Shi +7 more
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A non linear model to analyze the DC performance of SiC MESFET
Ain Shams Engineering Journal, 2022 This paper presents a detailed analytical and non-linear mathematical model describing the I − V characteristics of submicron silicon Carbide (SiC) Metal semiconductor field effect transistor (MESFETs).
Asad Ali +4 more
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Nanotechnology and Precision Engineering, 2020 Silicon-vacancy (VSi) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new controllable color center fabrication method, femtosecond (fs) laser writing has been gradually ...
Jiayu Liu +12 more
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Journal of Telecommunications and Information Technology, 2000 Silicon carbide (SiC) power devices offer significant benefits of improved efficiency, dynamic performance and reliability of electronic and electric systems.
Mietek Bakowski
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Theoretical study of the band structure of 2H-SiC and 4H-SiC of silicon carbide polytypes
Condensed Matter Physics, 2021 We have studied the electronic band properties of 2H-SiC and 4H-SiC silicon carbide polytypes. The structures of the electronic bands and density of state (DOS) using ab initio Density Functional Theory (DFT) were calculated for the first Brillouin zone ...
A. V. Sinelnik, A. V. Semenov
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Recent trends in silicon carbide device research [PDF]
Maejo International Journal of Science and Technology, 2008 Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a wide band gap semiconductor with an energy gap wider than 2eV and possesses extremely high power, high voltage switching characteristics and high thermal, chemical ...
Munish Vashishath
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Advanced Science, EarlyView.Epsilon‐near‐zero (ENZ) silicon carbide enables a selective far‐infrared emitter spectrally aligned with the human skin window around 10 µm for wavelength‐matched thermal therapy. In 25 within‐subject trials (50 hands) monitored by laser speckle contrast imaging, SiC increases blood perfusion by 30.2% versus a broadband graphite emitter while ...
Wen‐Teng Yao +3 more
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Graphene (0002)/Diamond (111) Heterojunction with High Piezoresistive Response
Advanced Science, EarlyView.Graphene/diamond heterostructures show promise as silicon alternatives for semiconductors, but high‐quality integration is challenging. Thermal electron irradiation enables covalent bonding; lonsdaleite acts as an intermediate. The heterostructure exhibits a high piezoresistive response (gauge factor −1149) associated with electron‐rich layers and ...
Xueyu Zhang +10 more
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4H-SiC microring opto-mechanical oscillator with a self-injection locked pump
APL PhotonicsWe have demonstrated, for the first time to our knowledge, self-injection locking of a distributed feedback diode laser to a multimode 4H-silicon carbide (4H-SiC) microring resonator, which is also used for the observation of resonant opto-mechanical ...
Anatoliy Savchenkov +5 more
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