Results 21 to 30 of about 637,262 (217)

Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]

, 2016
This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
core   +1 more source

Improvement of piezoresistance properties of silicon carbide ceramics through co-doping of aluminum nitride and nitrogen [PDF]

, 2008
The piezoresistance coefficient was measured on co-doped silicon carbide ceramics. Evaluation samples of alpha-silicon carbide ceramics were first fabricated by glass capsule HIP method using powder mixture of silicon carbide and aluminum nitride with ...
Kishimoto, Akira, Hayashi, Hidetaka, Okada, Yasuyuki   +2 more
core   +1 more source

PHASE CHANGES ON 4H AND 6H SIC AT HIGH TEMPERATURE OXIDATION

Urania, 2016
PHASE CHANGES ON 4H AND 6H SIC AT HIGH TEMPERATURE OXIDATION. The oxidation on two silicon carbide contain 6H phase and contains 6H and 4H phases has been done.
Jan Setiawan, Ganisa K Suryaman, Masrukan Masrukan   +2 more
doaj   +1 more source

Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

APL Photonics, 2016
Silicon carbide (SiC) is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing.
Andrey Baydin, Halina Krzyzanowska, Munthala Dhanunjaya, S. V. S. Nageswara Rao, Jimmy L. Davidson, Leonard C. Feldman, Norman H. Tolk   +6 more
doaj   +1 more source

Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique. [PDF]

, 2008
Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm.
Cheong, Kuan Yew, Purwadaria, Sunara, Lockman, Zainovia   +2 more
core   +1 more source

Crystal structures and the electronic properties of silicon-rich silicon carbide materials by first principle calculations

Heliyon, 2019
Silicon carbide has been used in a variety of applications including solar cells due to its high stability. The high bandgap of pristine SiC, necessitates nonstoichiometric silicon carbide materials to be considered to tune the band gap for efficient ...
Noura D. Alkhaldi, Sajib K. Barman, Muhammad N. Huda   +2 more
doaj   +1 more source

Visible and Near-infrared Microdisk Resonators on a 4H-Silicon-Carbide-on-Insulator Platform

, 2021
Wavelength-sized microdisk resonators were fabricated on a single crystalline 4H-silicon-carbide-oninsulator platform (4H-SiCOI). By carrying out microphotoluminescence measurements at room temperature, we show that the microdisk resonators support ...
Jiaxiang Zhang (1286778), Chen Shen (415899), Ailun Yi (10879170), Yifan Zhu (417526), Min Zhou (173135), Chengli Wang (1855207), Shumin Yang (847715), Kai Huang (3983), Liping Zhou (814435), Sannian Song (1618195)   +9 more
core   +1 more source

Thermal Behaviors and Optical Parametric Oscillation in 4H‐Silicon Carbide Integrated Platforms

Advanced Photonics Research, 2021
4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important role in ...
Xiaodong Shi, Weichen Fan, Anders Kragh Hansen, Mingjun Chi, Ailun Yi, Xin Ou, Karsten Rottwitt, Haiyan Ou   +7 more
doaj   +1 more source

A non linear model to analyze the DC performance of SiC MESFET

Ain Shams Engineering Journal, 2022
This paper presents a detailed analytical and non-linear mathematical model describing the I − V characteristics of submicron silicon Carbide (SiC) Metal semiconductor field effect transistor (MESFETs).
Asad Ali, Amir Ali, Amjad Hussain Zahid, Ghulam Mustafa, Muhammad Waseem Razzaq   +4 more
doaj   +1 more source

Resistance of silicon carbide to penetration by a tungsten carbide cored projectile [PDF]

, 2003
Proceedings of the Ceramic Armor and Armor Systems symposium held at the 105th Annual Meeting of the American Ceramic Society, 27-30 April 2003, in Nashville, TN, USASilicon carbide is well known as being a ceramic that can be employed as part of an ...
Hazell, Paul J., Roberson, Colin J., P. J. Hazell, C. Roberson   +3 more
core   +1 more source