Results 31 to 40 of about 1,545 (184)

Chemically Gradient Ordered Nanodomains Enable Large Tensile Ductility in Gigapascal Lightweight Refractory High‐Entropy Alloys

Advanced Science, EarlyView.
A high‐strength lightweight refractory high‐entropy alloy achieves extraordinary ductility owing to the introduction of coherent chemically gradient ordered nanodomains (CGONs). The CGONs not only serve as effective barriers to dislocation motion (strengthening) but also significantly promote dislocation nucleation and multiplication (ductilizing) upon
Wei Zhang, Dingshun Yan, Yong Zhang, Zhiming Li   +3 more
wiley   +1 more source

Design Considerations for 4H-SiC Lateral BJTs for High Temperature Logic Applications

IEEE Journal of the Electron Devices Society, 2018
4H-silicon carbide (SiC)-based bipolar integrated circuits (ICs) are suitable alternatives to silicon (Si)-based ICs in high temperature applications, owing to superior properties of 4H-SiC and the robust performance of SiC bipolar junction transistors ...
Amna Siddiqui, Hazem Elgabra, Shakti Singh   +2 more
doaj   +1 more source

Rare‐Earth–Sulfur Surface Modification Enables SiC Ceramics for Low‐Frequency Electromagnetic Wave Absorption in Extreme Environments

Advanced Science, EarlyView.
By altering surface chemical bonds to prolong relaxation time and shift absorption to lower frequencies, SiC/rare earth–sulfur (RE─S, RE = La, Ce, Pr, Sm, Gd, Er) materials achieve excellent low‐frequency electromagnetic wave absorption under extreme conditions, offering a new direction for designing high‐performance SiC‐based absorbers.
Zhanming Wu, Xiaojun Zeng, Yu‐Nan Tan, Chi Yu, Nuohua Xie, Yanfeng Gao   +5 more
wiley   +1 more source

Magnetorheological Polishing of Silicon Carbide to Angstrom-Scale Surface Roughness

Приборы и методы измерений
Single-crystal silicon carbide is a promising third-generation semiconductor material. Thanks to its large band gap, electronics based on it can withstand extreme operating temperatures of up to 500 °C and above and are resistant to radiation.
V. M. Kholad, A. L. Khudoley, P. S. Grinchuk, V. A. Lapitskaya   +3 more
doaj   +1 more source

Surface defects in 4H-SiC homoepitaxial layers

Nanotechnology and Precision Engineering, 2020
Although a high-quality homoepitaxial layer of 4H‑silicon carbide (4H-SiC) can be obtained on a 4° off-axis substrate using chemical vapor deposition, the reduction of defects is still a focus of research.
Lixia Zhao
doaj   +1 more source

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Physical Review X, 2023
Color centers are point defects in crystals that can provide an optical interface to a long-lived spin state for distributed quantum information processing applications. An outstanding challenge for color center quantum technologies is the integration of
Daniil M. Lukin, Melissa A. Guidry, Joshua Yang, Misagh Ghezellou, Sattwik Deb Mishra, Hiroshi Abe, Takeshi Ohshima, Jawad Ul-Hassan, Jelena Vučković   +8 more
doaj   +1 more source

A Novel Low On–State Resistance Si/4H–SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero–Transfer Mechanism

Crystals, 2023
In this study, we propose a novel silicon (Si)/silicon carbide (4H–SiC) heterojunction vertical double–diffused MOSFET with an electron tunneling layer (ETL) (HT–VDMOS), which improves the specific on–state resistance (RON), and examine the hetero ...
Hang Chen, Yourun Zhang, Rong Zhou, Zhi Wang, Chao Lu, Zehong Li, Bo Zhang   +6 more
doaj   +1 more source

From Devices to Systems: Integration Strategies for Micro‐Supercapacitors in Microsystems

Advanced Science, EarlyView.
Micro‐supercapacitors are evolving from device‐level energy storage toward system‐level functional units in integrated microsystems. This Review presents a system‐oriented design framework in which integration serves as the key link between application requirements, system constraints, device architectures, and material selection. Monolithic and hybrid
Zhuohao Liu, Gang Li, Kaiying Wang
wiley   +1 more source

ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook

Advanced Electronic Materials, EarlyView.
This work provides a comprehensive review of Zinc Oxide (ZnO) nanowires for high‐performance ultraviolet (UV) photodetection. By analyzing unique device physics and various detector architectures, it unveils strategies to overcome current performance limitations regarding speed and sensitivity.
Ala K. Jehad, Salih Alper Akalin, Mustafa Erol, Yavuz Ozturk, Metin Yurddaskal   +4 more
wiley   +1 more source

Generating stacking faults in 4H–SiC junction transistor by indentation and forward biasing

AIP Advances
Stacking faults in silicon carbide have been widely studied due to their negative impact on the application of silicon carbide in the power electronics industry.
Tingwei Zhang, Adrian Kitai
doaj   +1 more source