Results 31 to 40 of about 637,262 (217)
Silicon carbide formation in reactive silicon-carbon multilayers [PDF]
, 2022 An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive multilayers.
Gallino, Isabella +10 more
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Machining Characteristics of Micro EDM of Silicon Carbide [PDF]
한국정밀공학회지Silicon carbide (SiC) is chemically stable, highly heat-resistant, and resistant to thermal shock. SiC having excellent characteristics in a high temperature and high voltage environment is used in high-power semiconductors, high-precision mechanical ...
Ju Hyeon Lee +2 more
doaj +1 more source
Nanotechnology and Precision Engineering, 2020 Silicon-vacancy (VSi) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new controllable color center fabrication method, femtosecond (fs) laser writing has been gradually ...
Jiayu Liu +12 more
doaj +1 more source
An In-Situ TEM Study of High Temperature Helium Irradiation of 4H-SiC [PDF]
SiC is an excellent candidate material for use in fusion and fission nuclear reactors. The work done in this thesis aims to understand the behaviour of SiC under He irradiation at high temperatures.
Shen, Qiang
core +3 more sources
Journal of Telecommunications and Information Technology, 2000 Silicon carbide (SiC) power devices offer significant benefits of improved efficiency, dynamic performance and reliability of electronic and electric systems.
Mietek Bakowski
doaj +1 more source
Theoretical study of the band structure of 2H-SiC and 4H-SiC of silicon carbide polytypes
Condensed Matter Physics, 2021 We have studied the electronic band properties of 2H-SiC and 4H-SiC silicon carbide polytypes. The structures of the electronic bands and density of state (DOS) using ab initio Density Functional Theory (DFT) were calculated for the first Brillouin zone ...
A. V. Sinelnik, A. V. Semenov
doaj +1 more source
Preparation of small silicon carbide quantum dots by wet chemical etching [PDF]
, 2013 Fabrication of nanosized silicon carbide (SiC) crystals is a crucial step in many biomedical applications. Here we report an effective fabrication method of SiC nanocrystals based on simple electroless wet chemical etching of crystalline cubic SiC ...
Szekrényes, Zsolt +5 more
core +1 more source
Recent trends in silicon carbide device research [PDF]
Maejo International Journal of Science and Technology, 2008 Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a wide band gap semiconductor with an energy gap wider than 2eV and possesses extremely high power, high voltage switching characteristics and high thermal, chemical ...
Munish Vashishath
doaj
Controlled Growth of Boron Nitride in Various Phases
Advanced Materials Interfaces, EarlyView.Phase‐selective boron nitride growth is presented as a unified materials‐design problem across hexagonal, rhombohedral, cubic, and amorphous phases. By linking synthesis routes to thermodynamic stability, kinetic accessibility, surface diffusion, interfacial templating, and energetic activation, this review clarifies how bonding and stacking are ...
Pan Wu +6 more
wiley +1 more source
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
core +1 more source