Results 51 to 60 of about 637,262 (217)

Generating stacking faults in 4H–SiC junction transistor by indentation and forward biasing

AIP Advances
Stacking faults in silicon carbide have been widely studied due to their negative impact on the application of silicon carbide in the power electronics industry.
Tingwei Zhang, Adrian Kitai
doaj   +1 more source

Investigation on a novel SiC Schottky barrier diode hydrogen sensor with trench-insulator structure

Materials Research Express, 2021
A novel SiC Schottky barrier diode (SBD) hydrogen gas sensor with trench-insulator structure was proposed in this paper. A physical model is built for this hydrogen sensor based on 4H-SiC SBD thermionic emission theory, tunneling effect of carriers ...
Yonglan Qi, Kaiyuan Lai, Haojie Lv, Bao Qi, Yuheng Zhao   +4 more
doaj   +1 more source

Self‐Supported SiC@Graphene Porous Array Electrodes for Ultrastable Supercapacitors

Electron, EarlyView.
Self‐supported SiC–graphene porous array electrodes are fabricated through a novel steam‐assisted etching and in situ pyrolysis strategy. They deliver a high energy density of 4.9 μWh cm−2 at 150°C with 89.55% capacitance retention over 10,000 cycles, presenting a new approach for high‐temperature supercapacitors.
Jiaqi Jiang, Qiang Dong, Xiaocheng Jiang, Lin Xu, Jianfei Wang, Wancheng Yu, Huaying Ren, Shouzhi Wang, Xuejian Xie, Xianglong Yang, Xiufang Chen, Xiangang Xu   +11 more
wiley   +1 more source

Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm

Scientific Reports, 2022
The refractive index and its variation with temperature, i.e. the thermo-optic coefficient, are basic optical parameters for all those semiconductors that are used in the fabrication of linear and non-linear opto-electronic devices and systems. Recently,
Sandro Rao, Elisa D. Mallemace, Giuseppe Cocorullo, Giuliana Faggio, Giacomo Messina, Francesco G. Della Corte   +5 more
doaj   +1 more source

Interface Engineering in Piezoelectric‐on‐Insulator Platforms: Coupling of Electrons, Photons, and Phonons for Multifunctional Integration

Electron, EarlyView.
The underlying interface physics and engineering strategies across key POI material systems, including LiNbO3/Si, LiNbO3/SiC, LiNbO3/diamond, and AlN/diamond, were reviewed. The key engineering strategies such as atomic‐scale bonding optimization, nanostructuring, ultrathin phonon‐bridge interlayers, and ferroelectric domain wall engineering for ...
Yunjia Bao, Zhiqiang Wang, Rongbang Yang, Gongbin Tang, Ruiqiang Guo, Kunfeng Chen, Wen Hu   +6 more
wiley   +1 more source

Construction optimization and functional applications of fluorescent nanodiamonds

Responsive Materials, EarlyView.
This review summarizes synthesis, surface modification and optical properties of fluorescent nanodiamonds. Their advances in quantum sensing, single‐photon emission and biomedicine are discussed, and existing challenges and future directions are presented.
Yunpeng Yang, Sen Zhang, Chao Chen, Wensi Yang, Zuanquan Chen, Rui Fan, Linlin Liu, Benjian Liu, Kang Liu, Zhibo Zhang, Bing Dai, Jiaqi Zhu   +11 more
wiley   +1 more source

Dipolar spin relaxation of divacancy qubits in silicon carbide

npj Computational Materials, 2021
Divacancy spins implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of these important defects, for instance, spin relaxation
Oscar Bulancea-Lindvall, Nguyen T. Son, Igor A. Abrikosov, Viktor Ivády   +3 more
doaj   +1 more source

Microscopic Stress Analysis of Silicon Carbide Devices Under Overcurrent Conditions in DC Solid‐State Circuit Breakers

IET Smart Energy Systems, EarlyView.
A coupled Saber–TCAD–thermo‐mechanical simulation framework is proposed to evaluate microscopic stresses in SiC MOSFETs under overcurrent operation. Ultrahigh gate‐voltage driving reduces thermal and mechanical stress but increases gate oxide electric‐field stress, revealing a reliability tradeoff for DC solid‐state circuit breakers.
Bin Yu, Jiawei Qin, Liang Chen, Zehua Dai   +3 more
wiley   +1 more source

Manufacturing technology for contacts to silicon carbide [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2013
The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed.
Kudryk Ya.Ya., Bigun R. I., Kudryk R. Ya.   +2 more
doaj   +2 more sources

Widespread complex enameloid microstructure in teeth and rostral denticles of Cretaceous sclerorhynchoid skates (Rajiformes: †Sclerorhynchoidei)

Journal of Anatomy, EarlyView.
This article demonstrates that the teeth and rostral denticles of an extinct clade of sawfish‐like skates display an extremely derived enameloid microstructure, similar to what is known among sharks. The presence of tooth‐like enameloid microstructure in dermal denticles opens new perspectives about the origins and development of chondrichthyan ...
Endy Chateauneuf‐Gautier, Guillaume Guinot   +1 more
wiley   +1 more source