Results 71 to 80 of about 637,262 (217)

Porous Silicon Carbide for MEMS

Proceedings, 2017
Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates.
Markus Leitgeb, Christopher Zellner, Georg Pfusterschmied, Michael Schneider, Ulrich Schmid   +4 more
doaj   +1 more source

Graphene (0002)/Diamond (111) Heterojunction with High Piezoresistive Response

Advanced Science, Volume 13, Issue 50, 7 September 2026.
Graphene/diamond heterostructures show promise as silicon alternatives for semiconductors, but high‐quality integration is challenging. Thermal electron irradiation enables covalent bonding; lonsdaleite acts as an intermediate. The heterostructure exhibits a high piezoresistive response (gauge factor −1149) associated with electron‐rich layers and ...
Xueyu Zhang, Kun Guo, Zhigang Gai, Tianxiao Guo, Yuan Gao, Jiancai Leng, Mei Zhang, Tonggang Jiu, Yibao Wang, Shousheng Liu, Xin Jiang   +10 more
wiley   +1 more source

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

E3S Web of Conferences, 2017
A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications.
Gammon P.M., Chan C.W., Gity F., Trajkovic T., Kilchytska V., Fan L., Pathirana V., Camuso G., Ben Ali K., Flandre D., Mawby P.A., Gardner J.W.   +11 more
doaj   +1 more source

Chemically Gradient Ordered Nanodomains Enable Large Tensile Ductility in Gigapascal Lightweight Refractory High‐Entropy Alloys

Advanced Science, Volume 13, Issue 54, 28 September 2026.
A high‐strength lightweight refractory high‐entropy alloy achieves extraordinary ductility owing to the introduction of coherent chemically gradient ordered nanodomains (CGONs). The CGONs not only serve as effective barriers to dislocation motion (strengthening) but also significantly promote dislocation nucleation and multiplication (ductilizing) upon
Wei Zhang, Dingshun Yan, Yong Zhang, Zhiming Li   +3 more
wiley   +1 more source

Bio‐Inspired Robust Non‐combustible Bioplastic with Superinsulated Energy Harvesting for Intelligent Firefighting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 5, September 2026.
This study develops a novel non‐combustible chitosan‐based bioplastic (NCCB) via ethanol‐induced surface assembly. The material's inherent flame retardancy and thermally insulating, rough surface enable high‐performance TENGs. The NCCB‐TENG maintains stable output even when exposed to fire and exhibits dual sensitivity to temperature (25–200°C) and ...
Qilin Lu, Liying Zhang, Pengyun Zhang, Junjie Wang, Huamin Chen, Hanchen Wang   +5 more
wiley   +1 more source

MXenes in Next‐Generation Light‐Emitting Diodes: Innovations, Challenges, and Future Prospects

Laser &Photonics Reviews, Volume 20, Issue 17, 3 September 2026.
This review provides a systematic and critical overview of MXene integration in LEDs from their synthesis strategies and electronic characteristics to their roles as electrodes, interlayers, and emissive materials. It also explores the emerging prospects and challenges for MXene‐enabled flexible, transparent, and intelligent display technologies that ...
Awais Ali, Muhammad Ahsan Saeed, Waqas Ahmad, Hanseok Seo, Junhyeok Park, Seongkeun Oh, Hyung Jin Choi, Muhammad Junaid Sultan, Rana Mujahid, Soong Ju Oh   +9 more
wiley   +1 more source

Ballistic behaviour of explosively shattered alumina and silicon carbide targets [PDF]

, 2011
The resistance offered by three ceramic materials of varying strength that have been subjected to explosive loading has been investigated by depth-of-penetration testing.
H Nanda, Hazell, Paul J., Appleby-Thomas, Gareth J., P J Hazell, G J Appleby-Thomas, Nanda, H., D C Wood, Wood, David C.   +7 more
core   +1 more source

Numerical Simulation and Experimental Study on Picosecond Laser Polishing of 4H-SiC Wafer

Micromachines
4H-SiC wafers usually require polishing treatment after slicing to improve the surface quality. However, traditional polishing processes have problems such as low removal efficiency and easy surface damage, which affect the reliability of electronic ...
Yixiong Yan, Yuxuan Cheng, Sijia Chen, Yu Tang, Fan Zhang, Piaopiao Gao   +5 more
doaj   +1 more source

Ausheilen von Aluminium implantiertem 4H-SiC: Vergleich von Ofen- und Lampensystem

, 2022
S.621-624Furnace annealing and lamp annealing of aluminum implanted layers in 4H silicon carbide (SiC) were investigated with respect to surface degradation and electrical parameters.
Rambach, M., Frey, L., Friedrichs, P., Ryssel, H., Bauer, A.J.   +4 more
core   +1 more source

Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride

Advanced Materials Interfaces
In this report, the advanced manufacturing advantages of using supersaturated chlorinated chemistry are demonstrated at 1550 °C in 4H‐silicon carbide (4H‐SiC) epitaxy on trenches with different geometric profiles. Sloped mesa sidewalls (8°) show improved
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah   +8 more
doaj   +1 more source