Results 71 to 80 of about 1,545 (184)

Demonstration of 4H-silicon carbide on an aluminum nitride integrated photonic platform

Optics Letters
The existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide (SiC) to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with 1-µm-thick aluminum nitride and demonstrate a 4H-silicon-carbide-on-aluminum-nitride integrated photonic platform ...
Ruixuan Wang, Jingwei Li, Lutong Cai, Qing Li   +3 more
openaire   +3 more sources

Carrier Trap Density Reduction at SiO₂/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres. [PDF]

Materials (Basel), 2023
Brzozowski E, Kaminski M, Taube A, Sadowski O, Krol K, Guziewicz M.   +5 more
europepmc   +1 more source

High‐Performance Near‐Ultraviolet Photodetector Using Mo2C/SiC Heterostructure

Advanced Photonics Research
In this work, the results for a fabricated photodetector (PD) based on a molybdenum carbide (Mo2C) layer integrated with an n‐doped 4H‐silicon carbide (SiC) substrate, designed to operate in the near‐ultraviolet, are presented.
Sanjida Akter, Dinelka Somaweera, Khalil As’Ham, Salah Abdo, Andrey E. Miroshnichenko, Haroldo Takashi Hattori   +5 more
doaj   +1 more source

High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics. [PDF]

Light Sci Appl, 2021
Wang C, Fang Z, Yi A, Yang B, Wang Z, Zhou L, Shen C, Zhu Y, Zhou Y, Bao R, Li Z, Chen Y, Huang K, Zhang J, Cheng Y, Ou X.   +15 more
europepmc   +1 more source

Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H₂ Gaseous System. [PDF]

Materials (Basel), 2022
Song B, Gao B, Han P, Yu Y.
europepmc   +1 more source

Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes

IEEE Open Journal of Power Electronics
This study discusses the effect of stress on 4H-silicon carbide (4H-SiC) power diodes using numerical simulations. Two power diodes were evaluated; namely, a 600 V PiN diode and 1.8 kV junction barrier Schottky (JBS) diode.
Takaya Sugiura, Kazuma Yamashita, Nobuhiko Nakano   +2 more
doaj   +1 more source

Detector Response to D-D Neutrons and Stability Measurements with 4H Silicon Carbide Detectors. [PDF]

Materials (Basel), 2021
Kushoro MH, Rebai M, Tardocchi M, Altana C, Cazzaniga C, De Marchi E, La Via F, Meda L, Meli A, Parisi M, Perelli Cippo E, Pillon M, Trotta A, Tudisco S, Gorini G.   +14 more
europepmc   +1 more source

Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing. [PDF]

Proc Natl Acad Sci U S A, 2021
Gadalla MN, Greenspon AS, Defo RK, Zhang X, Hu EL.   +4 more
europepmc   +1 more source

Wafer-scale integration of freestanding photonic devices with color centers in silicon carbide

npj Nanophotonics
Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate photonic ...
Sridhar Majety, Victoria A. Norman, Pranta Saha, Alex H. Rubin, Scott Dhuey, Marina Radulaski   +5 more
doaj   +1 more source

Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications

, 2019
Secure transmission of information is a crucial element nowadays for industry and national security. Today, the only known way to establish provably secure communication is based on quantum key distribution in a quantum network. Currently, transmission rates and communication distances are limited by (unavoidable) optical loss in fibers and the ...
openaire   +3 more sources