Results 81 to 90 of about 1,545 (184)

Enhancing 4H-SiC Lapping Performance: Diamond and Boron Carbide Composite Abrasives Effects on Material Removal and Subsurface Damage

Crystals
Silicon carbide (SiC) substrates have been widely adopted in high-performance applications such as power electronics, optoelectronics, and semiconductors.
Xiaoming Sui, David Wei Zhang, Lin Zhang
doaj   +1 more source

Simulation Analysis of the Chemical Mechanical Polishing Process for Monocrystal 4H-Silicon Carbide Based on Molecular Dynamics. [PDF]

Micromachines (Basel)
Lei Y, Guo W, Feng K, Sun Z.
europepmc   +1 more source

Single V2 defect in 4H silicon carbide Schottky diode at low temperature. [PDF]

Nat Commun
Steidl T, Kuna P, Hesselmeier-Hüttmann E, Liu D, Stöhr R, Knolle W, Ghezellou M, Ul-Hassan J, Schober M, Bockstedte M, Bian G, Gali A, Vorobyov V, Wrachtrup J.   +13 more
europepmc   +1 more source

Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers. [PDF]

Micromachines (Basel)
Hsieh CH, Cheng CY, Hsiao YK, Wang ZH, Tu CC, Chen CA, Lee PT, Kuo HC.   +7 more
europepmc   +1 more source

Selective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H- Silicon Carbide. [PDF]

ACS Nano
Dietz J, Xie A, Day AM, Hu EL.
europepmc   +1 more source

Controlled Spalling of 4H Silicon Carbide with Investigated Spin Coherence for Quantum Engineering Integration. [PDF]

ACS Nano
Horn CP, Wicker C, Wellisz A, Zeledon C, Nittala PVK, Heremans FJ, Awschalom DD, Guha S.   +7 more
europepmc   +1 more source

Compact Nonvolatile Reconfigurable Mode Converter by Sb₂S₃ Embedded in 4H-Silicon-Carbide-on-Insulator Platform. [PDF]

Nanomaterials (Basel)
Zhu D, Chen J, Qiu S, Deng D, Luo J.
europepmc   +1 more source

Effect of Structurally Modified Toluene Diisocyanate-Based Polyurethane Pads on Chemical Mechanical Polishing of 4H Silicon Carbide Substrate. [PDF]

Polymers (Basel)
Meng Y, Zhang S, Zhang Z.
europepmc   +1 more source

Epitaxial and bulk growth of cubic silicon carbide on off-oriented 4H-silicon carbide substrates

, 2015
The growth of bulk cubic silicon carbide has for a long time seemed to be something for the future. However, in this thesis the initial steps towards bulk cubic silicon carbide have been taken. The achievement of producing bulk cubic silicon carbide will have a great impact in various fields of science and industry such as for example the fields of ...
openaire   +1 more source

Controlled Chemical Synthesis of Color Centers in Nanocrystalline Silicon Carbide. [PDF]

Nanomaterials (Basel)
Bezerra SM, Bortel G, Kollarics S, Gali A, Beke D.   +4 more
europepmc   +1 more source