Results 81 to 90 of about 637,262 (217)

High Temperature Simulation of 4H-SiC Bipolar Circuits

IEEE Journal of the Electron Devices Society, 2015
High speed and high-temperature operation capabilities are desirable features of integrated circuits. Due to their innate electrical and physical properties, silicon devices face significant hurdles at elevated temperatures, while silicon carbide devices
Hazem Elgabra, Shakti Singh
doaj   +1 more source

An Ultrahigh-Q Microresonator on 4H-silicon-carbide-on-insulator Platform for Multiple Harmonics, Cascaded Raman Lasing and Kerr Comb Generations

, 2021
The realization of ultrahigh quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high Q resonators provide an extreme environment of storage of light to enable observations of many ...
Chen Shen (415899), Ailun Yi (10879170), Bingcheng Yang (1712053), Yifan Zhu (417526), Zhe Wang (41178), Zhiwei Fang (77598), Chengli Wang (1855207), Liping Zhou (814435), Yuan Zhou (179597), Rui Bao (165955)   +9 more
core   +1 more source

Metal assisted photochemical etching of 4H silicon carbide

Journal of Physics D: Applied Physics, 2017
Abstract Metal assisted photochemical etching (MAPCE) of 4H–silicon carbide (SiC) in Na2S2O8/HF and H2O2/HF aqueous solutions is investigated with platinum as metallic cathode. The formation process of the resulting porous layer is studied with respect to
Markus Leitgeb, Christopher Zellner, Michael Schneider, Stefan Schwab, Herbert Hutter, Ulrich Schmid   +5 more
openaire   +1 more source

Entangled photon pair generation in an integrated SiC platform

Light: Science & Applications
Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities.
Anouar Rahmouni, Ruixuan Wang, Jingwei Li, Xiao Tang, Thomas Gerrits, Oliver Slattery, Qing Li, Lijun Ma   +7 more
doaj   +1 more source

Investigation of trenched and high temperature annealed 4H-SiC

, 2022
S.742-745This study focuses on the effects of a high temperature anneal after dry etching of trenches (post-trench anneal, PTA) on 4H-silicon carbide (4H-SiC).
Grieb, M., Banzhaf, C.T., Frey, L., Bauer, A.J., Trautmann, A.   +4 more
core   +1 more source

Modeling of electrons transfer in silicon carbide semiconductor structures

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of the simulation of electron transfer processes in the three-dimensional structure of 4H-SiC silicon carbide are presented using the Monte Carlo method.
V. V. Murav'ev, V. N. Mishchenka
doaj  

The design of mosaic armour: the influence of tile size on ballistic performance [PDF]

, 2008
Silicon carbide square tiles of different areal geometries and manufactured via two different processing routes have been bonded to polycarbonate layers to evaluate their ballistic performance.
Hazell, Paul J., Moutinho, Mauricio, Roberson, Colin J.   +2 more
core   +1 more source

Correction to “Effect of Mesa Sidewall Angle on 4H‐Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride”

Advanced Materials Interfaces, EarlyView.
wiley   +1 more source

Polytype dependence of transition metal-related deep levels in 4H-, 6H-, and 15R-SiC

, 2022
S.573-576We present an extensive data set on deep states of the transition metals Ti, V, Cr, Ta, and W in the bandgap of the three SiC-polytypes 4H, 6H, and 15R. The data are compared with theoretical predictions for 3C-SiC. The influence of inequivalent
Witthuhn, W., Grillenberger, J., Achtziger, N., Pasold, G.   +3 more
core   +1 more source

Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform. [PDF]

Light Sci Appl, 2022
Wang C, Li J, Yi A, Fang Z, Zhou L, Wang Z, Niu R, Chen Y, Zhang J, Cheng Y, Liu J, Dong CH, Ou X.   +12 more
europepmc   +1 more source