Results 101 to 110 of about 637,262 (217)

Silicon Carbide As a Robust Neural Interface (Invited)

, 2016
The intracortical neural interface (INI) could be a key component of brain machine interfaces (BMI), devices which offer the possibility of restored physiological neurological functionality for patients suffering from severe trauma to the central or ...
Saddow, Stephen E.,, Ul-Hassan, Jawad,, Bernardin, Evans,, Deku, Felix,, Frewin, Christopher L.,, Pancrazio, Joseph J.,, Everly, Richard,   +6 more
core   +1 more source

Wafer-scale integration of freestanding photonic devices with color centers in silicon carbide

npj Nanophotonics
Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate photonic ...
Sridhar Majety, Victoria A. Norman, Pranta Saha, Alex H. Rubin, Scott Dhuey, Marina Radulaski   +5 more
doaj   +1 more source

Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications

, 2019
Secure transmission of information is a crucial element nowadays for industry and national security. Today, the only known way to establish provably secure communication is based on quantum key distribution in a quantum network. Currently, transmission rates and communication distances are limited by (unavoidable) optical loss in fibers and the ...
openaire   +3 more sources

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond

, 2009
The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry.
Schöner, Adolf, Hallen, A., Isberg, J., Hallén, Anders,, Schoner, A., Linnarsson, Margareta K.,, Linnarsson, M. K., Isberg, Jan,   +7 more
core   +1 more source

Mechanism of Tailoring Laser-Induced Periodic Surface Structures on 4H-SiC Crystal Using Ultrashort-Pulse Laser

Nanomaterials
In this study, we examine the characteristics of laser-induced periodic surface structures (LIPSSs) fabricated on N-doped 4H-SiC (N-SiC) and high-purity 4H-SiC (HP-SiC) crystals using femtosecond–picosecond lasers. The effects of various laser parameters
Erxi Wang, Chong Shan, Xiaohui Zhao, Huamin Kou, Qinghui Wu, Dapeng Jiang, Xing Peng, Penghao Xu, Zhan Sui, Yanqi Gao   +9 more
doaj   +1 more source

Studies of the ambient dependent inversion capacitance of catalytic metal oxide silicon carbide devices based on 6H- and 4H-SiC material

, 1998
Platinum-oxide-silicon carbide structures change their capacitance upon gas exposure and are used as gas sensors. The decrease of the inversion capacitance within 750 to 900 degrees C due to hydrogen exposure is studied for 4H- and 6H-SiC,:both n- and p ...
Baranzahi, Amir,, Schoner, A.,, Tobias, Peter,, Karlsson, Susanne,, Lundström, Ingemar,, Rottner, K.,, Mårtensson, P.,, Lloyd Spetz, Anita,   +7 more
core  

Enhancing 4H-SiC Lapping Performance: Diamond and Boron Carbide Composite Abrasives Effects on Material Removal and Subsurface Damage

Crystals
Silicon carbide (SiC) substrates have been widely adopted in high-performance applications such as power electronics, optoelectronics, and semiconductors.
Xiaoming Sui, David Wei Zhang, Lin Zhang
doaj   +1 more source

Silicon Carbide Surface Cleaning and Etching

, 2018
Silicon carbide (SiC) surface cleaning and etching (wet, electrochemical, thermal) are important technological processes in preparation of SiC wafers for crystal growth, defect analysis or device processing.
Yakimova, Rositsa,, Syväjärvi, Mikael,, Jokubavicius, Valdas,   +2 more
core   +1 more source

XAFS spectrum of Silicon carbide

This dataset consists of X-ray absorption fine structure (XAFS) spectra at Si K-edge of Silicon carbide measured at Ritsumeikan-SR BL-10, and is a part of XAFS database (MDR XAFS DB, https://doi.org/10.48505/nims.1447) as a collection of ...
Ritsumeikan SR Center
core   +1 more source

Ultraviolet photoluminescence from 6H silicon carbide nanoparticles

, 2008
We report stable photoluminescence from 6H silicon carbide nanocrystals dispersed in three different solvents: water, hydrofluoric acid, and toluene.
ROSSI, ANDREA MARIO, MURPHY TE, Andrea M. Rossi, Vytas Reipa, REIPA V., Thomas E. Murphy   +5 more
core   +1 more source